在本論文中，我們研製一系列氮化鎵蕭特基二極體式氫氣感測器元件，並予以材料表面不同時間之離子偶合電漿表面處理，主要重點在於經過電漿表面處理後所製作出來的元件具有在室溫環境下對於氫氣有高靈敏度以及其元件所具備之寬廣溫度操作範圍；本文所提出元件是在空氣環境下通入不同濃度氫氣來研究其氫氣感測及響應特性。
首先，我們製作並研究一未經表面處理之鈀金屬/氮化鎵半導體蕭特基二極體氫氣感測器，由於氮化鎵材料具有的寬能隙及良好的熱穩定度特性，相較於傳統矽半導體所研製的感測器，本文所提出之金屬／半導體式的氫氣感測器可得到在寬廣的溫度範圍下較佳的的感測靈敏度及較大的蕭特基能障變化。
接著，我們製作並研究一系列經由不同時間長度之離子偶合電漿表面處理的元件，經由實驗結果得知，經過表面處理之元件相較未經表面處理之元件具有較高的氫氣感測能力、以及較快的響應合恢復時間。
最後，針對各元件之表面我們予以不同的儀器分析進一步證實經過表面處理的表面特性具有特性的改變。儀器包括化學分析電子光譜儀、原子力顯微鏡、掃描式電子顯微鏡、靜態接觸角量測儀；經由實驗結果得知，在經過電漿表面處理後之元件表面顯示出與位經過電漿表面處理不同特性。

In this work, we present a series of GaN-based Schottky diode hydrogen-sensing devices. The ion-coupled-plasma treatments with different time are applied. This work demonstrates the improvement of sensing ability of devices after surface treatment and widespread operating temperature. The hydrogen sensing and response characteristics of studied devices under different-concentration hydrogen gases are investigated in air atmospheres.
Firstly, a Pd/GaN(MS) Schottky diode hydrogen sensor without plasma surface treatment is fabricated and investigated. Due to wide bandgap and superior thermal stability, the studied GaN-based diode-type hydrogen sensor exhibits higher detection sensitivity and larger Schottky barrier height variations over a wide temperature range as compared with conventional Si-based sensors.
Secondly, a series of devices with ion-coupled-plasma surface treatment with different time are fabricated and investigated. According to the experimental results, in comparison with the device without treatment, the studied devices with plasma surface treatment display larger current and Schottky barrier height variation and higher hydrogen detection capabilities under forward and reverse bias operation, and shorter response and recovery times.
Finally, the analyses are applied to examine the effects on surfaces with and without plasma surface treatment, including electron spectroscopy for chemical analysis (ESCA)、atomic force microscopic (AFM)、scanning electron microscope (SEM) and static contact angle instrument.

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