本論文主要研究半導體奈米製程中，在淺溝渠隔離 (Shall Trench Isolation, STI) 薄膜沉積過程中所產生的微塵缺陷之改善。在此沉積過程中所產生的微塵缺陷由於無法即時被有效偵測而無法執行任何彌補措施，因此一但發現微塵缺陷情況過於嚴重，就只能將產品報廢。這種情況對半導體奈米製程良率及工廠生產過程造成不良後果，不但會大幅增加生產成本，且會延遲產品交貨時間，嚴重影響客戶在新世代產品推出的競爭力，同時會毀壞自己的商譽及客戶的信任。
淺溝渠隔離在半導體奈米製程中是至關重要的技術，主要目的是沉積氧化層用來隔離P-WELL 以及N-WELL。隨著半導體線寬越來越窄，淺溝渠隔離的深寬比也越來越大，因此薄膜沉積設備的填洞能力也變得越來越重要。一般傳統的 PECVD (Plasma Enhanced Chemical Vapor Deposition) 無法滿足高深寬比的填洞能力 (gap fill) 需求，因此必須使用HDPCVD (High Density Plasma Chemical Vapor Deposition) 搭配不同的沉積模式及過程來達成目的。
本論文探討及研究半導體製程，使用HDPCVD沉積氧化層淺溝渠隔離薄膜的過程中，微塵造成缺陷的機制及其改善方法。

In this thesis, the semiconductor nanometer process, the shallow trench isolation, (STI) improvement of the fine dust produced defects in the thin film deposition process. The fine dust produced in this deposition process defects not readily be effectively detected and can’t perform any remedies, but found dust defects too serious, it can only be scrapped. This case adverse consequences on the of semiconductor nanometer process yield and factory production process, not only a substantial increase in production costs, and will delay the delivery time, seriously affect the competitiveness of customers in the launch of a new generation of products will also destroy themselves goodwill and trust of customers.
Shallow trench isolation is critical in the semiconductor nanometer process technology, the traditional PECVD (Plasma Enhanced Chemical Vapor Deposition) unable to meet the capacity needs of high aspect ratio to fill the holes, so you must use HDPCVD (High Density Plasma Chemical Vapor Deposition) to achieve this objective.
This thesis is to explore and examine the semiconductor manufacturing process, the shallow trench isolation process of thin film deposition, about dust caused by defective mechanism and its improvement.

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