在半導體產業中，化學機械平坦化製程(chemical mechanical planarzation, CMP )為一關鍵性的技術。但在業界實際製程中，由於現象複雜，影響的參數眾多，加上成本問題，難以進行反覆的參數測試以求得最佳參數。因此，在本論文中建立觀測機台與理論模型用以進行測試。
本論文第一部份為建立一CMP流場觀測機台進行測試。除了利用高速攝影機CCD影像觀測研磨墊以及晶圓與研磨墊間流場之外，也利用壓力感測器量測晶圓與研磨墊間流體壓力，描繪出晶圓與研磨墊間流體壓力分佈，進而探討研磨墊種類、研磨液注入角度及位置、晶圓背壓、轉速等參數對於CMP流場之影響。結果發現低轉速與低背壓可使得研磨液較易流入晶圓與研磨墊間；同時，隨著轉速與晶圓背壓的增加，會造成平均流體壓力朝著負壓增大的方向變化。
本論文的第二部份為利用二維CMP理論模型，將實驗測試結果與非均勻晶圓背壓作用下之計算結果進行比對。數值結果發現非均勻晶圓背壓會造成接觸應力改變，影響流體壓力分佈，也提供實驗結果可能之解釋及利用此一結果提供後續機台改良之參考依據。

Chemical mechanical planarization (CMP) is now recognized as the enabling technology for producing near-perfectly planar surfaces that are essential to the success of lithographical processes for manufacturing ultralarge-scale integrated semiconductor devices. In practice, since the CMP process involves the complicated interactions of fluid dynamics, contact mechanics, and slurry chemistry, it is usually difficult (and expensive) to determine the optimum process parameters. To help solve this problem, here we study the slurry flow in CMP via experimental observations and numerical simulations.
In the first part of this thesis, we discuss the experimental setup and results of our slurry flow observations. Basically, the spreading of slurry flow is recorded by a high-speed CCD camera, and the fluid (i.e., slurry) pressures at a number of locations are measured by pressure transducers so as to construct the fluid pressure distribution on the wafer surface. Observations are made for several different polishing pads. Also, on each pad, we vary the slurry injection site and injection angle, the wafer-back pressure, and the rotation speeds of the wafer and pad. The results suggest that, in general, it is easier for the slurry to enter the pad–wafer interface at lower rotation speeds of the wafer and pad, and at lower wafer-back pressures. Moreover, for a fixed slurry flowrate, the slurry spreading can be maximized by properly choosing the groove pattern and slurry injection site on the pad. It is also found that the average fluid pressure is subambient, with its magnitude increasing with the wafer-back pressure and the rotation speeds of the wafer and pad.
In the second part of this thesis, we discuss the results of numerical simulations based upon a 2-D CMP model. As it turns out, reasonable agreement between the experimental and numerical results can be obtained only if a non-uniform wafer-back pressure distribution is used in the numerical computations. This suggests that the wafer-back pressure may indeed be non-uniformly distributed in our experiments. A number of directions therefore are identified in which we may improve our slurry flow observation apparatus in the future.

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