電漿切割技術係利用電漿蝕刻對矽晶圓進行深蝕刻使其分離，相較於現行產業界所使用之鑽石刀切割技術與雷射切割技術，電漿切割技術擁有諸多優點，且在晶片大小與切割溝道之線寬不斷微縮、晶圓厚度不斷下降下，電漿切割技術之優勢更為顯著，其不僅可切割較小之切割溝道線寬、切割效率高、不會對晶片產生物理性之破壞、不會對晶片有高溫之熱影響區效應、晶片形狀多樣化，且其切割之晶片品質與晶片強度
為電漿切割技術最顯著之製程優勢。

本研究以感應耦合式電漿系統產生高密度電漿進行Bosch蝕刻製程，第一部分僅探討蝕刻製程之各項蝕刻條件變化對於矽蝕刻速率之影響，所得之最高矽蝕刻速率為11.6μm/min。第二部分使用微影製程定義蝕刻溝道之線寬，線寬為約32μm，以完整之Bosch製程進行蝕刻步驟與沉積步驟之變化調整探討對於矽深蝕刻之影響，以達垂直蝕刻圖形與高蝕刻速率，所得之最趨近垂直蝕刻圖形之矽蝕刻速率為8.03μm/min，但蝕刻圖形上部仍有弓形蝕刻輪廓產生。第三部分以合作廠商所提供之產線試片進行測試，先由合作廠商使用雷射切割將切割溝道上之金屬層與介電層去除並同時定義切割溝道之線寬，我方再進行雷射切割後之切割溝道分析以確認切割溝道上之金屬殘留量不會影響電漿切割矽之進行，並於電漿蝕刻矽前先以電漿灰化去除蝕刻溝道表面之碳。由不同雷射切割方式前處理之試片，其所欲達成垂直蝕刻圖形之蝕刻條件相異，本部分所達到之最佳蝕刻結果為於試片之蝕刻溝道線寬為14.5μm下，矽蝕刻速率為5.94μm/min，蝕刻結果為垂直蝕刻圖形，並沒有底切與弓形蝕刻輪廓產生。第四部分為蝕刻阻擋層之阻擋能力測試，共以合作廠商提供之PI、雷射切割保護液PVA與二氧化矽基板作為測試樣品，在本研究之電漿切割條件下，雷射切割保護液PVA具有較佳之抗蝕刻能力與高選擇比。

In this study, plasma dicing was performed using inductively coupled plasma to generate high density plasma. The plasma dicing technology was based on Bosch process to conduct deep silicon etching. By adjusting the passivation and etching process, the dicing profile could be vertical with a high etching rate. The optimum dicing results achieved in the research were an etching rate of 8.03μm/min and 5.94μm/min with the linewidth of 32μm and 14.5μm. The etching profile were vertical without bowing and undercut. The testing result of etching mask resistance showed that laser saw solution and silicon dioxide had higher selectivity.

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