| 研究生: |
蘇柏丞 Su, Po-Cheng |
|---|---|
| 論文名稱: |
點膠機轉移奈米銀漿料暨電遷移研究 Study of Electromigration of Nano Silver Paste by Direct Writing with Needle Type Dispenser |
| 指導教授: |
陳引幹
Chen, In-gann |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2018 |
| 畢業學年度: | 106 |
| 語文別: | 中文 |
| 論文頁數: | 89 |
| 中文關鍵詞: | 點膠機 、奈米銀漿料PM03 、表面鍍膜 、孔隙率變化 、電遷移 |
| 外文關鍵詞: | Needle Type Dispenser, paste PM03, hot pressing technique, porosity, electromigration |
| 相關次數: | 點閱:94 下載:2 |
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本研究使用精微式探針點膠機直接轉移奈米銀漿料PM03於矽基板上,於矽基板上物理氣相沉積鈦導線進行表面改質並改善奈米銀漿料PM03及矽基板之附著度。
本論文探討點膠機之參數對不同奈米銀漿料PM03固含量(70wt%、65wt%)尺寸影響。奈米銀漿料PM03附著度改善製程,並使用蒸鍍鈦之方式進行表面改質,並且,輔助熱壓之鐵氟龍板無實驗室過去研究使用鐵氟龍膠帶於表面產生非預期之矽進而影響電遷移結果。
本研究使用之奈米銀漿料PM03於熱壓後內部會有孔洞產生(孔隙率約7%),並配合高荷電之中斷實驗,探討多孔結構於通電實驗前後之表面形貌、孔隙率及3D影像結構之變化。
奈米銀漿料PM03於熱壓參數(250 oC、5 MPa)、通電參數(250 oC、5x105 A/cm2)通電48hr導線表面無明顯的微結構變化。
奈米銀漿料PM03於熱壓參數(250 oC、5 MPa)、通電參數(250 oC、5x105 A/cm2) 通電140hr 導線各處均產生孔洞、且於0.75 cm處(即靠近陰極/中間) 產生凸塊;通電後,奈米銀漿料PM03整條導線均發生電遷移變化。
奈米銀漿料PM03於熱壓參數(250 oC、5 MPa)、通電參數(250 oC、5x105 A/cm2)之0hr、48hr、96hr、216hr之中斷實驗搭配共軛焦顯微鏡之3D結果發現,於216hr導線各處均有孔洞產生;於96hr及216hr均有凸塊產生,符合奈米銀漿料140hr之中斷實驗結果,位置具有再現性。
奈米銀漿料PM03於熱壓參數(250 oC、5 MPa)、通電參數(250 oC、5x105 A/cm2)之通電48hr中斷實驗中,導線各處之孔隙率相近,且由陰極往陽極遞減,符合電子流方向,孔隙率數據具有再現性。
The relationship between porosity and electromigration can be discussed by fabricating nano-scale structures. Electromigration usually occurs during the accumulation of atoms accompanied by protrusions or hillocks at the anode and during the depletion of atoms accompanied by voids or an open circuit at the cathode. However, we show that electromigration occurs over the entire stripe surface, not just at the anode or cathode.
Paste PM03 was the nano-silver paste used in this research. After using Needle Type Dispenser to direct write paste PM03 on the silicon substrate, a hot press technique was used to help the silver nanoparticles sinter to form a dense structure with a hot press temperature and pressure of 250oC and 5 MPa, respectively. Internal pre-existing pores existed (porosity about 7%). The internal pore structure was expected to alter during current-stressing. The parameters of the current-stressing test were a temperature of 250℃ and a current density of 5x105 A/cm2. We discuss the microstructure change in the silver nano-stripe and electromigration for different time points.
In the interruption test, the silver nano stripe did not occur obvious electromigration phenomenon at 48 hrs., which means that it did not form hillocks at the anode or voids at the cathode on the surface. However, voids formed all over the silver nano-stripe, and hillocks developed near the middle and cathode at 140 hrs. and 216 hrs. The porosity decreased from the cathode (23.5±4.5%) to the anode (4.6±1.2%), which follows the direction of the electron force.
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