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研究生： 蔣宇睿
Chiang, Yih-Ray
論文名稱： 奈米尺度下之矽基電晶體先導性動態分析
Preliminary Dynamic Analysis of Nano-scale Silicon-based Transistors
指導教授： 蔡南全
Tsai, Nan-Chyuan
學位類別： 碩士
Master
系所名稱： 工學院 - 機械工程學系
Department of Mechanical Engineering
論文出版年： 2008
畢業學年度： 96
語文別： 中文
論文頁數： 105
中文關鍵詞： 次門檻擺幅 、量子傳輸 、電子態密度 、側壁空間形成法
外文關鍵詞： Sidewall Spacer Formation, Sub-threshold Swing, Electron Density of State, Quantum Transport
相關次數： 點閱：98  下載：3 
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    • 本文目的在於探討電荷載子於奈米尺度下的運動特性，經由古典傳輸模型加入量子修正項後，可以得知量子傳輸特性與古典傳輸模型的差異。藉由商用軟體nanoMOS的模擬，可初步分析因晶體結構的改變或材料的選擇不同對奈米級導線場效電晶體的影響，如次門檻擺幅的上升和門檻電壓的下降等重要性能指標。另外，本研究亦使用VASP(Vienna ab initio Simulation Package)計算程式來初步模擬矽奈米線，藉由原子間的排列形成矽奈米線幾何截面與尺寸的不同設計，與摻雜元素取代晶體內的矽原子，進而得知奈米尺度下晶體的結構改變與電子態密度的分佈。模擬結果對日後奈米線電晶體在結構上的設計與元件材料的選擇提供了重要參考的依據。最後本文提出簡單易於實現的矽奈米線製程方法—側壁空間形成法(Sidewall Spacer Formation)，以製造矽奈米線。

    The goal of this thesis is aimed at the investigation upon the kinematic characteristics of the charge carriers within the silicon-based transistor under nano-scale effects, via classical transport model to include a quantum correction term so that the difference between quantum transport model and classical transport model can be unveiled. Based on the computer simulation of the commercial software nanoMOS, the impacts on nanowire field effect transistors due to various design of crystal structure and choice of doped material composition are analyzed. Conductance performance such as the sub-threshold swing and the threshold voltage are studied. Furthermore, this thesis utilizes software package VASP (Vienna ab initio Simulation Package) to simulate the behavior of the silicon-based nanowires by varying nanowires geometric cross-section and replacement of the silicon atoms in crystal by other elements, such that the induced distribution of the electron density of state of the nanowires owing to change of the crystal structure can be obtained. The simulation results provide essential basis for nanowires field effect transistor in structural design and potential choice of the device material for future developments. Finally, this thesis proposes a simple and easily realizable fabrication technique, sidewall spacer formation, for implementation of silicon nanowires.

    中文摘要...............................................I 英文摘要..............................................II 誌謝.................................................III 目錄..................................................IV 表目錄...............................................VII 圖目錄..............................................VIII 第一章 緒論............................................1 1.1 前言...............................................1 1.2 文獻回顧...........................................3 1.3 研究動機與目的.....................................7 1.4 論文架構...........................................8 第二章 奈米級導線電晶體傳輸模型計算與模擬..............9 2.1 漂移-擴散方程式...................................10 2.2 密度梯度理論(Density Gradient Model)..............13 2.3 奈米線電傳導特性模擬..............................19 2.3.1 通道長度對場效電晶體的傳輸影響..................21 2.3.2 奈米級導線本身介電常數對場效電晶體的傳輸影響....27 2.3.3 閘極接觸功函數對場效電晶體的傳輸影響............30 第三章 奈米級導線模擬與物性分析.......................35 3.1 幾何模型與晶體結構................................35 3.1.1 矽晶體結構簡介..................................36 3.1.2 方形截面之矽奈米線..............................40 3.1.3 圓形截面之矽奈米線..............................49 3.1.4 幾何截面對矽奈米線的影響........................55 3.2 晶體缺陷與摻雜....................................59 3.2.1 摻雜元素選定....................................59 3.2.2 掺雜異元素於矽奈米線中央........................60 3.2.3 掺雜他元素於矽奈米線周邊........................68 3.2.4 摻雜元素於相異位置對奈米線之影響................76 第四章 奈米級導線的製作...............................80 4.1 奈米線合成........................................81 4.1.1 氣-液-固相法....................................82 4.1.2 模板輔助成長法..................................87 4.1.3 側壁空間形成法..................................91 4.2 製程分析與設計....................................93 4.2.1 製程分析........................................93 4.2.2 製程設計........................................94 第五章 結論與未來展望.................................98 5-1 結論..............................................98 5-2 未來展望..........................................99 參考文獻.............................................100 自述.................................................105

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