| 研究生: |
林家康 Lin, Chia-Kang |
|---|---|
| 論文名稱: |
以新穎之奈米夾層技術提升ZnO 薄膜之導電度 Improvement of the electrical conductivity of ZnO thin film through the use of a nanoscale-interlayer |
| 指導教授: |
丁志明
Ting, Jyh-Ming |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2003 |
| 畢業學年度: | 91 |
| 語文別: | 中文 |
| 論文頁數: | 94 |
| 中文關鍵詞: | 磁控濺鍍 、奈米夾層 、薄膜 、氧化鋅 、鋁 、透明導電膜 |
| 外文關鍵詞: | sputtering, nanoscale, interlayer, zinc oxide, aluminum thin film, thin film, conducting, transparent |
| 相關次數: | 點閱:67 下載:4 |
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本研究利用新穎之奈米夾層技術濺鍍透明導電膜(ZnO/Al/ZnO,ZAZ),藉由改變ZnO與Al膜的濺鍍條件,探討ZAZ的結構、光學與導電性質的變化。實驗中使用康寧玻璃1737F作為基板,並分別利用RF與DC磁控濺鍍法沈積ZnO與Al薄膜。
ZAZ為一種三明治結構,因此其性質會同時受到兩種薄膜的影響,因此本研究分為三階段作討論,首先分別探討兩種薄膜的性質,分析結果再與ZAZ薄膜做比較。第一階段探討不同濺鍍參數對ZnO薄膜性質的影響,包括:濺鍍功率、工作壓力、薄膜厚度與熱處理溫度;第二階段利用低沈積速率,成長奈米厚度的金屬Al膜,並探討厚度對金屬Al膜的透光性與導電性的影響。第三部分藉由前述的討論結果,選擇較佳的濺鍍參數沈積ZAZ薄膜,並分別探討ZnO與Al的厚度以及熱處理對整體性質的影響。
研究結果顯示,在基板不加熱以及厚度很薄的條件下,沈積出的純ZnO薄膜不具有導電性,另外,以高濺鍍功率(100W)及低工作壓力(2mtorr)下濺鍍之ZnO薄膜具有較佳的結構。金屬薄膜要同時具有高透光性與高導電性並不容易,當薄膜厚度降至奈米厚度時,可增加可見光的透光度,卻會使薄膜的電阻係數上升。
當金屬Al膜沈積在兩層ZnO薄膜之間時,因為ZnO具結晶性,使得金屬膜層結構與連續性變好,因此增進了導電性與透光性。ZAZ薄膜在高溫的環境下相當不穩定,因為高溫容易造成Al原子的氧化以及增進介面的擴散,造成導電度大幅降低。本研究中最佳的製程條件為50Å/67Å/50Å的ZAZ薄膜,可見光透光性接近95%,電阻係數約為8×10-3 Ohm-cm。
The electrical conductivity of zinc oxide thin film is often limited if the thin film is deposited at low temperatures. Improvement of the electrical conductivity for room-temperature deposited zinc oxide thin films is thus called for. In this paper, Transparent conducting thin film can be obtained using a ZnO/Al nano-laminates technique.
ZnO and Al films were grown on Corning1737F using RF and DC magnetron sputtering methods. The relationship between structure characteristic, optical and electrical properties as well as the deposition parameters of ZnO and Al was investigated in this paper.
The material characterization includes film thickness using α-step, surface morphology using SEM and AFM (Atomic Force Microscope), electrical resistance using a four-point probe method, optical property using UV-VIS spectrometry. Crystallinity is characterized using grazing-angle X-ray. The depth profile of ZAZ structure was analyzed by AES (Auger Electron Spectroscopy).
ZnO thin films have better structure when deposited with higher power and lower working pressure. The resistivity of Aluminum thin films was increased when thickness decreased, but optical transmittance contrariwise. Aluminum thin films deposited as thin as about 91Å are continuous and conductive, and provide optical transmittance large as 70%. The continuity of Aluminum nano-thin film was improved when deposited on ZnO thin film because of the crystallinity of ZnO. The relation leads to the improvement of optical and electrical properties. ZAZ sandwich structure has bad thermal stability. ZAZ structure with thickness of 50Å/67Å/50Å has high transmittance of 95% and resistivity of 8×10-3 Ohm-cm.
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