磁性奈米線陣列擁有高密度、高比表面積、高深寬比等特性，對於磁性儲存元件應用有良好潛力，而為了以低廉的成本並快速製作鈷奈米線陣列，本研究使用陽極氧化鋁（anodic aluminum oxide，AAO）模板法配合電鍍製程技術，並以市售大孔徑(200 nm)與本實驗室自製小孔徑(40~50 nm)模板沉積鈷奈米線，探討不同電化學沉積參數對於鈷奈米線沉積情況、結晶方向。
於市售大孔徑(200 nm)AAO模板方面，探討以直流方式沉積，改變不同電壓、電解液濃度與電解液溫度，討論其沉積情況、結晶方向，以及使用高壓(2 V)脈衝方式沉積鈷奈米線，於退火處理前後與傳統低壓直流進行比較。而自製小孔徑模板方面，由於AAO模板底部為不導電之阻擋層，以漸降陽極電壓方式削減其模板阻擋層，並且探討其草酸電解液溫度與擴孔蝕刻於自製AAO模板對於鈷奈米線沉積的影響，並探討兩種不同模板沉積鈷奈米線其結晶性，而最後將自製AAO模板移除，探討獨立鈷奈米線陣列其可見光反射性質。
本實驗使用市售大孔徑(200 nm)模板，在高壓(2 V)脈衝方式沉積鈷奈米線克服孔洞堵塞，以及退火後呈現單一[101]結晶方向之高強度，而在5oC下草酸以漸降陽極電壓方式製備AAO模板以及搭配磷酸擴孔10 min，沉積出長度均勻且在[002]結晶方向高結晶強度的鈷奈米線，並且移除自製AAO模板後，呈現直立無團聚之鈷奈米線陣列，控制其鈷奈米線長度可呈現出不同可見光學波長增強。

Methods used to produce metallic nanowires include lithographic patterning , which is comparatively cumbersome, expansive and not suitable for large scale production, and ‘template synthesis’, which involves electrochemically depositing metal into nanopores of the template. Generally, the template method is cheap and easy to operate, and can produce nanowires with uniform diameters ranging from several nanometres to hundreds of nanometres in a large area. Most research has focused on the effect of the arrangement of the nanowires. However, the structure of nanowires plays an important role in the electronic, optical and magnetic properties. The single crystal structure is essential to compare experimental results with theoretical study. Moreover, the conditions employed in the deposition process, such as Metal electrolyte of concentration, deposition voltage and temperature, are responsible for the control of the structure. We investigated the effects of deposition conditions on the structure of the metallic nanowires.

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