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研究生: 林于晴
Lin, Yu-Ching
論文名稱: 藉由動量操控實現之超低畸變結構光
Ultra-Low Distortion Structured Light Enabled by Momentum Engineering
指導教授: 吳品頡
Wu, Pin Chieh
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年: 2026
畢業學年度: 114
語文別: 中文
論文頁數: 90
中文關鍵詞: 超穎介面 、結構光 、畸變 、動量操控 、深度感測 、VCSEL
外文關鍵詞: metasurface, structured light, distortion, momentum engineering, depth sensing, VCSEL
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  • 結構光深度感測可藉由投射已知光點圖案,並分析光點於物體表面上的位置變化來取得深度資訊。傳統結構光投影系統通常需要透鏡或繞射光學元件進行光場調控,使系統在微型化與整合上受到限制。超穎介面透過次波長奈米結構控制光的相位、振幅與傳播方向,超穎介面厚度薄且結構緊湊,可作為結構光投影系統的光場調控元件。本論文提出結合動量操控與準直陣列之超低畸變結構光設計,並以940 nm VCSEL陣列作為光源。透過動量空間設計,配合局部準直相位,使VCSEL陣列的出射光導向目標投影區域,形成低畸變結構光點陣。在製程上,本論文比較二氧化矽硬遮罩與鉻金屬遮罩兩種製程方式。結果顯示,鉻金屬遮罩製程可減少製程步驟,避免頂層遮罩殘留造成的結構偏差,並提高奈米結構的側壁垂直度。實際遠場投影結果顯示,光點分布與模擬結果相對應,量測所得之結構光畸變率為1.99%,且能搭配單一相機進行深度感測。
    結果顯示,藉由動量操控與準直相位整合後,可在單一超穎介面中實現低畸變結構光點陣,作為單一相機深度感測的投影光源。若未來進一步將超穎介面與VCSEL陣列光源整合,並根據光源座標配置與發散角,調整準直區域尺寸及準直焦距,使各光源於元件平面上的主要能量分布與對應準直區域相匹配,可減少光能進入相鄰區域,改善光束的準直程度,形成更清晰且排列規則的結構光點陣。

    Structured-light depth sensing obtains depth information by projecting a known dot pattern and analyzing changes in the dot positions in the captured image. However, conventional structured-light projection systems usually require additional lenses or diffractive optical elements, thereby limiting system miniaturization.
    In this thesis, an ultra-low-distortion structured-light generator based on a metasurface is proposed. Momentum engineering is used to guide the light from a 940 nm vertical-cavity surface-emitting laser (VCSEL) array toward the target projection regions, while a collimator array is introduced to reduce the intrinsic divergence of the VCSEL beams. Compared with the silicon dioxide hard-mask process, the chromium metal mask process simplifies fabrication, avoids structural differences caused by residual top-mask material, and results in nanostructures with higher sidewall verticality.
    The fabricated metasurface generates a far-field structured-light pattern corresponding to the simulation results. The measured distortion is 1.99%. The projected dot pattern is also used for single-camera depth sensing. These results demonstrate the feasibility of combining a metasurface with a VCSEL array for miniaturized structured-light projection systems.

    中文摘要 I Extended Abstract II 致謝 VII 目錄 IX 表目錄 XII 圖目錄 XIII 第一章 緒論 1 1.1 前言 1 1.2 結構光技術於深度感測之發展 2 1.2.1 結構光深度感測原理 2 1.2.2 傳統結構光系統之技術挑戰 3 1.3 超穎介面及其於結構光之應用 7 1.3.1 超穎介面概論 7 1.3.2 介電質超穎介面之發展及其優勢 9 1.3.3 超穎介面於結構光投影之應用潛力 11 1.3.4 超穎介面結構光系統之發展與限制 13 1.4 研究動機與目的 14 第二章 元件設計、數值模擬與製程流程 16 2.1 前言 16 2.2 單元結構設計、模擬及最佳化 16 2.3 超低畸變結構光元件設計 18 2.3.1 動量空間(k-space)理論與動量操控設計 19 2.3.2 局部準直相位陣列與複合相位整合設計 23 2.3.3 光線追跡與模擬遠場驗證 25 2.4 儀器介紹與製程流程 29 2.4.1 薄膜沉積技術(Thin Film Deposition) 29 2.4.1.1 共濺鍍機(Co-Sputter) 30 2.4.1.2 熱蒸鍍機(Thermal Coater) 30 2.4.2 旋轉塗佈儀(Spin Coater) 31 2.4.3 電子束微影系統(Electron Beam Lithography) 32 2.4.4 蝕刻技術(Etching Technology) 36 2.4.4.1 感應耦合電漿離子蝕刻機(ICP RIE System, Fluorine base) 37 2.4.4.2 感應耦合式高密度電漿蝕刻機(ICP RIE System, Chlorine based) 38 2.4.5 樣品製程步驟 38 第三章 光學量測 43 3.1 前言 43 3.2 光學量測系統架構 43 3.2.1 單點雷射光源量測系統 43 3.2.2 VCSEL光源陣列量測系統 45 3.3 遠場投影量測方法 47 3.3.1 光點發散角量測與計算 47 3.3.2 分光角度量測與計算 47 3.3.3 結構光畸變率計算 48 3.4 深度感測量測與影像分析方法 49 第四章 結果與討論 53 4.1 前言 53 4.2 超穎介面樣品製程結果 53 4.3 遠場結構光投射結果與樣品選擇 55 4.4 遠場結構光特性之定量評估 57 4.4.1 遠場結構光投影結果比較 57 4.4.2 分光角度計算 59 4.4.3 分光效率計算 62 4.4.4 光點發散角計算 63 4.4.5 結構光畸變率 64 4.5 深度感測驗證結果 65 第五章 結論與未來展望 68 參考文獻 69

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