本論文研製毫米波CMOS低插入損耗變化相移器及W-與K-band 射頻收發開關。低插入損耗變化之相移器採用TSMC CMOS 0.18-μm製程，應用於天線陣列系統，其主要架構是在180°反射式相移器輸出串接一個可切換180°相位差之切換式相移器，藉由切換180°切換式相移器使整體相位達到360°連續可調控之特性。K-與W-band 射頻收發開關則是分別採用TSMC 0.18-μm和TSMC 90-nm GUTM CMOS製程來進行設計，在應用上開關電路主要是切換射頻前端收發機中發射端與接收端路徑。W-band (75 - 110 GHz) 開關在本論文中共有兩個電路，第一個電路主體使用串-並式開關架構並使用基極浮接技術(body-floating)來改善插入損耗與線性度，此外搭配並聯電感諧振及洩漏訊號消除技術改善其隔離度；第二個電路使用串-並式開關設計，串聯路徑上使用雙並聯路徑來作為設計主體，同時將匹配的傳輸線利用彎折的方式來達到微小化的作用，並搭配基極浮接技術、並聯諧振電感與疊接電晶體等技術來改善其開關特性。而在K-band (15 - 30 GHz)開關設計主要利用一縮小化的堆疊式電感概念，藉由此電感大幅縮減整體電路面積，以利於整合。電路皆使用Agilent ADS與Ansoft 3-D全波電磁模擬軟體HFSS來進行模擬，晶片量測部分則採fully on-wafer方式進行量測。

This thesis presents the design of millimeter-wave (MMW) CMOS low-insertion loss phase shifters and W- / K-band CMOS T/R switches. The K-band phase shifter (PS) is fabricated using standard TSMC 0.18-μm CMOS technology. To achieve full 360° phase control, a (fixed) switch-type 180° phase shifter is applied to the continuous 180° reflection-type phase shifter for the phased-array antenna system. The K- and W-band T/R switches are fabricated using standard TSMC 0.18-μm and 90-nm GUTM CMOS technologies, respectively. The first W-band (75 - 110 GHz) switch is designed by using series-shunt structure with body-floating technique to improve the insertion loss and linearity performance. To enhance the isolation performance, the parallel inductor and leaking cancellation technique are adopted. The second W-band series-shunt type switch uses the double parallel-path structure. In addition, the body-floating, parallel inductor and stacked transistor techniques are used to improve the overall performance. In the K-band switch design, the chip size is much reduced by using the stacked inductor. All the measurements are performed by using the on-wafer measurement setup.

[1] J. A. Howarth, A. P. Lauterbach, M. J. Boers, L. M. Davis, A. Parker, J. Harrison, J. Rathmell, M. Batty, W. Cowley, C. Burnet, L. Hall, D. Abbott, and N. Weste, “60 GHz radios: enabling next-generation wireless applications,” in Proc. TENCON 2005 region 10, Nov. 2005, pp. 1–6.
[2] RF atmospheric absorption / ducting [Online]. Available : http://www.tscm.com/rf_absor.pdf
[3] IEEE 802.15 Working Group for WPAN. [Online]. Available: http://www.ieee802.org/15
[4] 曾暐哲，應用於微波頻段之低雜訊放大器及相移器之研究，國立台灣大學電信工程研究所碩士論文，民國九十七年。
[5] P. W. Hannan, “The element-gain paradox for a phased-array antenna, IEEE Trans. Antennas Propag., vol. 12, no. 4, pp. 423-433, Jul. 1964.
[6] A. Natarajan, “Millimeter-wave phased arrays in silicon,” Ph.D. dissertation, California Institute of Technology, Pasadena, California, 2007.
[7] X. Tang, and K. Mouthaan, “Design considerations for octave-band phase shifters using discrete components,” IEEE Trans. Microw. Theory Tech., vol. 58, no. 12, pp. 3459-3466, Dec. 2010.
[8] M. Kim, J. G. Yang, and K. Yang, “Switched transmission-line type Q-band 4-bit MMIC phase shifter using InGaAs pin diodes,” Electron. Lett., vol. 46, no. 3, pp. 225-226, Feb. 2010.
[9] J.-W. Lee, and S.-Y. Kim, “60 GHz switched-line-type phase shifter using body-floating switches in 0.13 mm CMOS technology,” Electron. Lett., vol. 48, no. 7, pp. 376-378, Mar. 2012.
[10] D.-W. Kang, H.-D. Lee, C.-H. Kim, and Songcheol Hong, “Ku-Band MMIC phase shifter using a parallel resonator with 0.18-μm CMOS technology,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 1, pp. 294-301, Jan. 2006.
[11] F. Ellinger, U. Mayer, M. Wickert, N. Joram, J. Wagner, R. Eickhoff, I. Santamaria, C. Scheytt, R. and Kraemer, “Integrated adjustable phase shifters,” IEEE Microw. Mag., vol. 11, no. 6, pp. 97-108, Oct. 2010.
[12] Y. Yu, P. G. M. Baltus, A. de Graauw, E. van der Heijden, C. S. Vaucher, and A. H. M. van Roermund, “A 60 GHz phase shifter integrated with LNA and PA in 65 nm CMOS for phased array systems,” IEEE J. Solid-State Circuits, vol. 45, no. 9, pp. 1697-1709, Sep. 2010.
[13] T.-C. Yan, W.-Z. Lin, and C.-N. Kuo, “A 3.5 GHz phase shifter of high input power range with digitally controlled VGA,” in IEEE Radio Freq. Integr. Technol. Symp., Nov. 2011, pp 29-32.
[14] A. S. Nagra, and R. A. York, “Distributed analog phase shifters with low insertion loss,” IEEE Trans. Microw. Theory Tech., vol. 47, no. 9, pp. 1705-1711, Sep. 1999.
[15] F. Ellinger, H. Jäckel, and W. Bächtold, “Varactor-loaded transmission-line phase shifter at C-band using lumped elements,” IEEE Trans. Microw. Theory Tech., vol. 51, no. 4, pp. 1135-1140, Apr. 2003.
[16] J.-C. Wu, C.-C. Chang, S.-F. Chang, and T.-Y. Chin, “A 24-GHz full-360° CMOS reflection-type phase shifter MMIC with low loss-variation,“in IEEE Radio Freq. Integr. Circuits Symp., Jun. 2008, pp 365-368.
[17] D. M. Pozar, Microwave Engineering, 3rd ed., John Wiley and Sons, Inc., 2005.
[18] C.-S. Lin, S.-F. Chang, C.-C. Chang, and Y.-H. Shu, “Design of a reflection-type phase shifter with wide relative phase shift and constant insertion loss,” IEEE Trans. Microw. Theory Tech., vol. 55, no. 9, pp. 1862-1868, Sep. 2007.
[19] F. Ellinger, R. Vogt, and W. Bachtold, “Ultracompact reflective-type phase shifter MMIC at C-band with 360° phase-control range for smart antenna combining,” IEEE J. Solid-State Circuits, vol. 37, no. 4, pp. 481-486, Apr. 2002.
[20] H. Zarei, C. T. Charles, and D. J. Allstot, “Reflective-type phase shifters for multiple antenna transceivers,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 54, no. 8, pp. 1647-1656, Aug. 2007.
[21] S.-B. Cohn, “Characteristic impedances of broadside-coupled strip transmission lines,” IEEE Trans. Microw. Theory Tech., vol. 8, no. 6 , pp. 633-637, Nov. 1960.
[22] 林宏儒，24-及77-GHz毫米波CMOS帶通濾波器、相移器及類循環器之研製，國立成功大學電腦與通信工程研究所碩士論文，民國九十九年。
[23] 蕭文俊，應用於電磁微振動感測系統之相移器與混頻器設計，國立中正大學電機工程研究所碩士論文，民國九十六年。

[24] C.-H. Wu, W.-T. Li, J.-H. Tsai, T.-W. Huang, “Design of a K-band low insertion loss variation phase shifter using 0.18-μm CMOS process,” in IEEE Asia-Pacific Microw. Conf., Dec. 2010, pp. 1735-1738.
[25] A. B. Nguyen, and J.-W. Lee, “A K-band CMOS phase shifter MMIC based on a tunable composite metamaterial,” IEEE Microw. Wireless Compon. Lett., vol. 21, no. 6, pp. 311-313, Jun. 2011.
[26] 羅盛郅，應用於超寬頻接收機之寬頻CMOS平衡器及分散式切換開關 RFIC與3-5-GHz射頻接收模組之研製，國立成功大學電機工程研究所碩士論文，民國九十五年。
[27] 郭奇昕，毫米波CMOS高隔離度射頻收發開關及功率放大器之研製，國立成功大學電機工程研究所碩士論文，民國一百零一年。
[28] N. Talwalklar, C. P. Yue, and S. S. Wong, “An integrated 5.2 GHz CMOS T/R switch with LC-tuned substrate bias,” ISSCC Dig. Tech. Papers, pp. 362–499, vol. 1, Feb. 2003.
[29] M. C. Yeh, Z. M. Tsai, R. C. Liu, K. Y. Lin, Y. T. Chang, and H. Wang, “Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 1, pp. 31–39, Jan. 2006.
[30] Y. Ayasli, R. L. Mozzi, J. L. Vorhaus, L. D. Reynolds, and R. A. Pucel, “A monolithic GaAs 1－13-GHz traveling-wave amplifier,” IEEE Trans. Microw. Theory Tech., vol. 30, no. 7, pp. 976–981, July 1982.
[31] H. Mizutani, and Y. Takayama, “DC－110-GHz MMIC traveling-wave switch,” IEEE Trans. Microw. Theory Tech., vol. 48, no. 5, pp. 840–845, May 2000.
[32] X.-J. Li, and Y.-P. Zhang, “Flipping the CMOS switch,” IEEE Microw. Mag., vol. 11, no. 1, pp. 86–96, Feb. 2010.
[33] T. Ohnakado, S. Yamakawa, T. Murakami, A. Furukawa, E. Taniguchi, H. Ueda, N. Suematsu, and T. Oomori, “21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs),” IEEE J. Solid-State Circuits, vol. 39, no. 4, pp. 577–584, Apr. 2004.
[34] H. Xu, and K. K. O, “A 31.3-dBm bulk CMOS T/R switch using stacked transistors with Sub-design-rule channel length in floated p-well,” IEEE J. Solid-State Circuits, vol. 42, no. 11, pp. 2528–2534, Nov. 2007.
[35] T. Ohnakado, S. Yamakawa, T. Murakami, A. Furukawa, E. Taniguchi, H. Ueda, N. Suematsu, and T. Oomori, “21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs),” IEEE J. Solid-State Circuits, vol. 39, no. 4, pp. 577–584, Apr. 2004.
[36] B.-W. Min and G. M. Rebeiz, “Ka-band low-loss and high-isolation 0.13 μm CMOS SPST/SPDT switches using high substrate resistance,” in IEEE Radio Freq. Integr. Circuits Symp., Jun. 2007, pp. 569–572.
[37] C.-Y. Ou, H.-R. Lin, H.-R. Chuang and T.-H. Huang, “A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process,” in Eur. Microw. Conf., Sep. 2009, pp. 250–253.
[38] F. J. Huang, and K. K. O, “A 0.5-μm CMOS T/R switch for 900-MHz wireless applications,” IEEE J. Solid-State Circuits, vol. 36, no. 3, pp. 486–492, Mar. 2001.

[39] M. C. Yeh, Z. M. Tsai, R. C. Liu, K. Y. Lin, Y. T. Chang, and H. Wang, “Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 1, pp. 31–39, Jan. 2006.
[40] S. C. Chang, S. F. Chang, T. Y. Chih, and J. A. Tao, “An internally-matched high-isolation CMOS SPDT switch using leakage cancellation technique,” IEEE Microw. Wireless Compon. Lett., vol. 17, no. 7, pp. 525–527, July 2007.
[41] H.-R. Chuang, H.-C. Kuo, F.-L. Lin, T.-H. Huang, C.-S. Kuo, and Y.-W. Ou, “60-GHz millimeter-wave life detection system (MLDS) for noncontact human vital-signal monitoring,” IEEE Sensors J., vol. 12, no. 3, pp. 602-609, Mar. 2012.
[42] Z. M. Tsai, M. C. Yeh, M. F. Lei, H. Y. Chang, C. S. Lin, and H. Wang, “FET-integrated CPW and the application in filter synthesis design method on traveling-wave switch above 100 GHz,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 5, pp. 2090–2097, May 2006.
[43] R.-B. Lai, J.-J. Kuo, and H. Wang, “A 60–110 GHz transmission-line integrated SPDT switch in 90 nm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 20, no. 2, pp. 85–87, Feb. 2010.
[44] S. F. Chao, H. Wang, C.-Y. Su, and J. G. J. Chern, “A 50 to 94 GHz CMOS SPDT switch using traveling-wave concept,” IEEE Microw. Wireless Compon. Lett., vol. 17, no. 2, pp. 130–132, Feb. 2007.
[45] H. Feng, G. Jelodin, K. Gong, R. Zhan, Q. Wu, C. Chen and A. Wang, “Super Compact RFIC Inductors’ in 0.18-µm CMOS with Copper Interconnects,” Radio Freq. Integr. Circuits Symp., pp.443-446, June 2002.
[46] C.-Y. Ou, H.-R. Lin, H.-R. Chuang and T.-H. Huang, “A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-um CMOS process,” in Eur. Microw. Conf., Sep. 2009, pp. 250–253.
[47] Y. Jim and C. Nguyen, “Ultra-compact high-linearity high-power fully integrated DC–20-GHz 0.18-μm CMOS T/R switch,” IEEE Trans. Microw. Theory Tech., vol. 55, no. 1, pp.30-36, Jan. 2007.
[48] Amin Hamidian, Randolf Ebelt, Denys Shmakov, Martin Vossiek, Tao Zhang, Viswanathan Subramanian, Georg Boeck, “24 GHz CMOS transceiver with novel T/R switching concept for indoor localization,” Radio Freq. Integr. Circuits Symp., pp.293-296, June 2013.
[49] C. -H. Yu, P. -H. Lo, J. -Y. Lyu, H. -C. Kuo, and H. -R. Chuang, “Integrated 60-GHz CMOS variable-gain low-noise amplifier and full 360° phase shifter for phased-array RF receiving system,” in Proc. IEEE Radio Wireless Symp. pp. 59 – 61, Jun. 2014.

[50] Y. Wu, S. –C. Huang, C. –H. Yu, W. –Y. Ruan and H. -R Chuang, “60-GHz CMOS artificial magnetic conductor on-chip 2×2 monopole - antenna phased array RF receiving system with integrated variable-gain low-noise amplifier and phase shifter,” in Proc. IEEE Int. Microw. Symp., Jun 2014, pp. 1–3.
[51] R. J. Langley, and A. J. Drinkwater, “An improved empirical model for the Jerusalem cross,” IEEE Proc. H, Microwaves, Opt. & Antennas, vol. 129, pp. 1-6, Feb., 1982.
[52] M. K. T. Al-Nuaimi, and W. G. Whittow, “Low profile dipole antenna backed by isotropic Artificial Magnetic Conductor reflector,” in Proc. IEEE Eur Conf on Antennas and Propagation (EuCAP),. pp. 1 – 5, Apr. 2010.
[53] A. E. I. Lamminen, A. R. Vimpari, and J. Saily, “UC-EBG on LTCC for 60-GHz Frequency Band Antenna Application,” IEEE Trans. Antennas Propag., vol. 57, no. 10, Oct., 2009.
[54] F. Yang, and Y. Rahmat-Samii, “Reflection Phase Characterization of the EBG Ground Plane for Low Profile Wire Antenna Application,” IEEE Trans. Antenna Propag., vol. 51, pp. 2691-2703, Oct. 2003.
[55] C. R. Simovski, P. de Maagt, and I. V. Melchakova, “High-Impedance Surface Having Stable Resonance with Respect to Polarization Incidence Angle,” IEEE Trans. Antennas Propag., vol. 53, no. 3, Mar., 2005.
[56] X. Y. Bao, Y. X. Guo and Y. Z. Xiong, “60-GHz AMC-Based Circularly Polarized On-Chip Antenna Using Standard 0.18-μm CMOS Technology,” IEEE Trans. Antennas Propag., vol. 60, no. 5, May, 2012.
[57] C. A. Balanis, Antenna Theory and Design, 3rd ed. New York: Wiley, 2005
[58] W. Shin, O. Inac, Y.C. Ou, B. Ku, and G. M. Rebeiz, “A 108-114 GHz 4x4 Wafer-Scale Phased Array Transmitter with High-Efficiency On-Chip Antennas,” IEEE J. Solid-State Circuits, vol. 48, no. 9, pp. 2041–2055, Sep. 2013.
[59] 呂知穎，毫米波CMOS低變化插入損耗相移器與非對稱型射頻收發開關之研製，國立成功大學電機工程研究所碩士論文，民國一百零一年。