在本論文中主要的研究方向區分為兩部分：第一部份為建立一具有電弧放電特性與中空陰極效應之中空陰極電弧放電機制；並將其應用於不含氫之類鑽碳膜與奈米鑽石薄膜之沉積。第二部份則是將類鑽碳膜與奈米鑽石薄膜應用於微奈米壓印技術，並同時開發滾輪逆式壓印技術，將微米與奈米級之圖案轉移至可撓曲之塑膠基板上。
在沉積類鑽碳的領域裡，一般認為不含氫的類鑽碳膜會有較佳的物理性質；然而目前業界仍是以傳統的陰極電弧的方法沉積，但礙於必須濾掉電弧產生的微粒子，則必須在沉積速率上作犧牲。因此本論文中首先利用石墨材料製作陰極與陽極，並且利用陰極屏蔽的方式，輔以高電流所產生的電阻加熱，成功地開發出結合中空陰極效應與電弧機制之不含石墨微粒子之高密度中空陰極電弧放電系統(HCA ion plating system)；並且經由陽極附近的電漿特性量測電子密度達1011~1012 cm-3。此中空陰極電弧放電在電性上仍然屬於電弧放電的機制，但是避免掉了傳統電弧放電必定會產生的弧根侵蝕之問題；就此觀點而言，實為電弧放電中之一大突破。
 繼而利用此中空陰極電弧放電之機制，以中空陰極所產生之高能量離子束，削熔石墨陰極管或是陽極上之石墨，利用此作為不含氫沉積類鑽碳膜之碳源，在適當的負偏壓下，沉積出不含氫之類鑽碳膜；雖然所沉積的類鑽碳膜只有19GPa的硬度表現，此是由於所使用的HCA系統中，會因為熱輻射所產生的高熱加熱基板表面，導致在類鑽碳膜沉積時的溫度高達400℃以上；若是系統加以改良進而降低基板沉積時的溫度，則對於所沉積的不含氫類鑽碳膜之物理性質，其表現應當會有相當大的改善。
另外，善用HCA所伴隨的高溫，並且以其具有高能量的離子束與大量的電子轟擊下，將之利用於奈米鑽石薄膜之成長；在一系列的實驗中，若單純只利用Ar與氫氣作為進料氣體，雖然可以沉積出奈米鑽石，但是由於碳源會隨時間遞減，導致不易沉積出大區域之奈米鑽石薄膜；有鑑於此，導入CH4於進料氣體中，則成功地於低壓的環境下(5×10-1 Torr)沉積出奈米鑽石連續膜；在此實驗中證實了於具有高密度的電子環境與高能量離子束轟擊的HCA系統中，在此雙重效應之下，會抑制鑽石的成長，進而增加二次成核的速率與成核密度，導致成長出奈米鑽石薄膜。
 本論文的第二部份，沉積類鑽碳膜與奈米鑽石薄膜於已圖案化之微米級Si具或是直接將奈圖案製作於類鑽碳膜與奈米鑽石薄膜上；用此作為壓印所需之奈米模具並進行熱壓印，皆可以成功的將圖案轉移至所使用的PET/ITO塑膠基板上。此方法的建立提供目前壓印模具的另一項選擇，同時不需再額外的沉積或製備抗黏著層，此對於壓印製程的縮短與模具壽命的提升皆有很大的助益。
 至於開發滾輪逆式壓印技術方面，在四吋Si-Mold上，於OTS/DMDS＝1的比例下，以自組裝的方式製作抗黏著層，其圖案可以完全的被轉移至塑膠基板上，並且調變PMMA阻劑濃度與塗佈轉速，可以控制殘留層厚度（在微米尺度模板，所得到的極限為600 nm；而對於奈米圖案的模板，殘餘層厚度可降低至200nm以下）。本研究進一步利用此方法轉印四角錐狀與奈米級的圖案，也可以完全的轉移；此證實了以滾輪逆式壓印技術，不需要操作在高溫與高施力的環境，並且不需要冗長的持壓時間，即可以輕意地將Si模板圖案轉移至所使用之塑膠基板上，包括微米級的特殊圖案與奈米級圖案；並且可以利用塗佈轉速與高分子阻劑濃度來控制殘餘層的厚度。

Hollow cathode arc (HCA) ion plating system has been developed to deposit hydrogen-free diamond-like carbon (DLC) films and nanocrystalline diamond films free of micro-particles. Then, DLC and diamond films were studied as mold materials or as anti-adhesive layer on silicon molds in imprint lithography technology.
Although hydrogen-free DLC film was usually deposited by filtered cold cathodic arc method, the deposition rate was low and the film contained micro-particles. HCA ion plating was therefore proposed and developed in order to enhance the deposition rate and to eliminate micro- particles. HCA used a graphite tube as the hollow cathode, a graphite-ring as the anode and a graphite shield, which was mounted between the cathode and the anode to avoid arc trigger outside cathode tube. High temperature hollow-cathode was maintained at a temperature higher than 2000 oC by using Ar gas flow and high DC current over 120A to generate high densities of ions. No particle was emitted from the cathodic tube during steady-state operation owing to the shield constricting the arc discharge from the inside of the cathodic tube.
HCA was employed to deposit hydrogen-free DLC film free of micro-particles. The hardness of hydrogen-free DLC film reached to 19 GPa at a deposition temperature of 400oC. DLC film deposited at such a high temperature can rarely exhibits such high hardness.
Nanocrystalline diamond films were also grown by the HCA system with various compositions ratio of Ar /H2 and CH4/Ar /H2. Large-area continuous nanodiamond film can not be obtained using Ar /H2, but continuous nanodiamond film in larger area can be obtained using CH4/Ar /H2. Carbon supply from the graphite cathode tube is not enough, and a carbon source like methane (CH4), is need to deposit continuous nanodiamond film with an average grain size of 10 nm.
DLC and diamond films were also applied to high temperature imprint lithography process anti-adhesive layers of silicon mold. DLC films were deposited by plasma-enhanced chemical vapor deposition (PECVD) onto 4” Si-molds with micro-scale feature less than 5 μm. After hot-embossing process, the pattern of Si-mold was completely transferred to PMMA layer on the flexible PET substrates and the Si substrates. When nanodiamond films were deposited by PECVD, the pattern with micro-feature was also successfully transferred to the substrates at an imprint temperature near Tg of PMMA. Furthermore, the nano-scale patterns were fabricated directly on the DLC films and nanodiamond films as imprint molds by imprint lithography process. The nano-patterns could be successfully transferred into PMMA layer precisely on Si substrates without removing the mold at high temperature.
Finally, the modified reversal imprinting lithography by rolling process was carried out to transfer the patterned polymer layer from the mold with self-assembly monolayer of OTS/DMDS onto the flexible PET substrate. The process has been shown to be capable of transferring any nano-scale pattern features, such as dots, stripes, and tetrahedral pattern, onto the substrate. The thickness of residual layer could be controlled by varying the PMMA concentration and the spin coating speed. The reversal imprint lithography by rolling process is very effective to transfer the large-area patterns onto the substrate with high producibility and reliability.

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