本論文研究了在單晶β-Ga2O3塊狀晶體上製作的歐姆接觸和蕭特基二極體，分別應用於應變規和溫度感測器，以及量測二極體的電學性能，如接觸電阻率、蕭特基能障高度和反向飽和電流等，並分析感測器的傳感特性。基於Pt/ β-Ga2O3蕭特基之溫度感測器之溫度靈敏度為1.561 mV / K，為世界上首次觀察到β-Ga2O3的壓阻效應, 其相對應的室溫下應變係數為-5.85，並且觀察到GF對溫度的變化的依賴性。本研究還使用等熱電容瞬態譜來檢測位於導帶以下0.6、0.8和1.0eV的三個深度缺陷，並討論這些缺陷對電力電子器件的影響。

This study investigated ohmic contacts and Schottky contact diodes fabricated on single-crystal β-Ga2O3 bulk crystals, applied to strain gauges and temperature sensors, respectively. This study obtained the electrical properties of the diodes such like contact resistivity, Schottky barrier height, reverse saturation current, etc. The temperature sensitivity of Pt/β-Ga2O3 Schottky diode based temperature sensor is 1.561 mV/K. This study observed the pieozoresistive effect in β-Ga2O3 for the first time in the world, which contributes to a gauge factor of -5.8 at 300K and varies with temperature. This study also used iso-thermal capacitance transient spectroscopy to detect three deep defects located at 0.6, 0.8 and 1.0 eV below the conduction band and discussed the effects of these defects on power electronic devices.

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