氧化鋅為一種具有寬能隙(3.3eV)以及大的激子束縛能(exciton binding energy)的半導體，因此在光電領域上具發展潛力，而近年來奈米科技的蓬勃發展，除了許多氧化鋅奈米結構被成長出來外，更引領出許多新的應用，例如抗反射層、奈米發電元件、光感測器、氣體感測器及太陽能電池等等。
本研究以磁控濺鍍製程為主成長具有高度結晶性、大面積均勻性的氧化鋅薄膜及奈米結構，並對於其成長機制以及應用方面進行研究。文中主要討論氫氣於濺鍍製程中所造成的還原環境對於結構的表面形貌、導電性質以及結構所造成的影響，並發展出成長大面積單晶氧化鋅奈米柱的技術，除此之外，本研究後段更結合了傾斜角製程技術，研究出一種以缺陷引入所造成的結構傾斜機制，差排(dislocation)為主的缺陷於奈米結構的暴露面(exposed side)引入造成結構的連續彎曲，本研究以此為基礎結合了化學溶液方法成長出具有良好排列(well-aligned)的傾斜奈米線陣列，這此結構可以應用於抗反射，良好排列的傾斜奈米線也具有良好的光學異向性，除此之外，傾斜奈米線陣列應用於奈米發電元件時，也因為結構的傾斜使得輸出的電壓對於施力方向具有異向性。

ZnO is a promising material with potential applications in electric and optoelectronic devices, due to direct wide bandgap (Eg=3.3eV) semiconducting properties and large exciton binding energy(60meV). Because of fast development of nanotechnology in recent years, various ZnO nanostructures have been successfully grown by different methods, leading to many kinds of applications, such as anti-reflection coating, nano-generator, light sensor, gas sensor and solar cell, etc.
In this study, ZnO thin film and nanostructures were deposited by magnetron sputtering with high crystallinity and large-area uniformity, its growth mechanism and characteristics were also discussed. Introduction of hydrogen during high temperature sputtering was found to affect the morphological, electrical and structural properties, based on its results, large-area single-crystalline ZnO nanorods were successfully grown. Besides, a new nanostructure bending mechanism was also well developed by combining high-temperature reductive sputtering and oblique-angle deposition technology, which is mainly based on introduction of defects on exposed side of nanostructure during growth, leading to continuous columns bending. Oblique ZnO nanowires array were grown on bent columns by subsequent hydrothermal process, excellent anti-reflection property was measured based on this novel structure, well aligned oblique nanowires also show anisotropic optical property. Besides, when oblique nanowire array was adopted in nanogenerator, the output voltage changed with scanning force due to its oblique structure.

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