光阻去除是微影製程中的最後一個步驟，其要求是光阻必須完全去除洗淨，以確保後續製程的潔淨度。現行的方式大都以高溫硫酸/雙氧水洗劑去除，缺點是會產生大量的廢酸與循環使用所造成二次污染對產品的影響。因此研究臭氧技術被來取代現有光阻去除劑，其優點是去除後效果與現行的方式相同，而且反應後沒有廢水與廢酸的處理問題。但是由於臭氧技術受限於溶解度與質傳速度之限制，到目前為止，利用臭氧水來取代現行的光阻去除方法的研究中，有效增加去除效率依舊是一大挑戰。
本文主要研究臭氧水在單片晶圓旋式蝕刻機中，來去除晶圓表面的光阻的能力。並研究在不同的臭氧水流量，溫度與不同轉速下之影響。之後加入紫外光，運用紫外光會激發臭氧與紅外線加熱系統且比較光阻去除效果。
實驗結果顯示，在浸泡式中對I-line光阻去除率約在1000 Å /min，在相同的濃度下旋轉條件至1000RPM以上對I-line光阻去除率可以達約2300 Å /min，但再高的轉速就無顯著的效果。加入紫外光後對光阻去除效率更可以提升至約3300 Å/min。唯利用紅外線加溫至晶片表面達約五十幾度時，對光阻去除並沒有顯著提升。

Photoresist stripping is last step of the lithography process. In order to maintain defect-free conditions for subsequent processes, photoresist must be removed completely. The conventional photoresist stripping uses the SPM method in high temperatures. The disadvantage of the method is the large volume of chemical wastewater produced. Ozone technology was evaluated to replace the SPM process. The advantage is its strong oxidization capability for organics like photoresist. After reacting, there is no problem of chemical wastewater. Due to the situation that ozone is limited to its solubility and mass transfer rate, it is still a challenge to replace PR stripping using SPM by ozonized water.
In this study, ozonized water in the single wafer processor was used to study photoresist stripping. Parameters evaluated including ozonized water flow, temperature and chuck speed. In addition UV activation and IR heating to ozone reaction were also evaluated.
Results show that the I-line photoresist stripping rate in wet bench is approximately 1000 Å/min. At the same concentration, the stripping rate is 2313 Å/min on spin speed of 1000 RPM, but no further improvement on higher spin speed. It is improved to 3300 Å/min by adding UV lamp to the system. However, IR heating to increase the temperature by approximately 50℃ shows no significant effect.

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