本論文係在研究種晶層薄膜表面，經可見光，UV光，電子束照射或撞擊後，其電性及形態變化的情形及兩者的關聯性。本研究是模擬ULSI製程中，製作銅與低介電係數絕緣層組成的多層連接線時，可能遭受到外來的因素及其對利用銅電鍍所做的中介窗影響。經由實驗，並使用AFM及TEM分析其表面形態，吾人發現可見光，UV光，及電子束的照射強度 ，時間，皆會影響種晶層表面。但其影響程度皆不相同，其中以電子束的影響最大。例如5000伏以上的電子束照射20秒以上就可以使中介窗的電阻變化20%以上。又受可見光與UV光照射後的中介窗電阻變化趨勢剛好相反，此外並發現中介窗受可見光，UV光，及電子束照射後其阻值的變化與中介窗在晶圓上的位置有很大的關係。

In this thesis, the target has been paid on study of the resistance change and the surface morphology of seed layer in the via of Cu/low-k multilevel interconnects ,after the irradiation of visible light,UV light,and E-beam.
In the past , the via filling by electroplating was found to be quite sensitive to the morphology of sidewall .Hence, we suspect the morphology of seed layer will be affected by the the irradiation of visible light,UV light,and E-beam during the inspection of seed layer thus causing the via，s resistance change .

　　In this study ,we used AFM and TEM to examine the surface morphology of seed layer surface after the irradiation of visible light,UV light,and E-beam and found the surface morphology indeed changed with time and strength of these lights or E-beam.Additionally the resistance of via is dependent on the chip located on the wafer.

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