本研究第一部份為利用熱燈絲化學氣相沈積法，以SiCl4和H2為反應物，並由反應器之器壁所吸附的水氣做為氧的提供源，成長一維nc-Si/SiOx複合奈米線。實驗結果顯示在較低的基板溫度(~120℃)有利於成長奈米線，且其生長並不受基板的種類影響。而由SEM與TEM的觀察可証明此nc-Si/SiOx複合奈米線之成長機制並非由VLS機制或優勢成長方向所主導，且流場分佈亦不影響此奈米線之成長。EELS與TEM的分析可證實此奈米線之結構為以SiOx為主體其中包埋了矽奈米晶粒。藉由PL光譜的量測結果指出，其PL光譜涵蓋了波長420~585 nm，以高斯分佈分解可得三特性峰，分別為460 nm、490 nm以及530 nm。由文獻知460 nm的特性峰為氧空缺(neutral oxygen vacancy，O3≡Si－Si≡O3)所造成，490 nm特性峰與一般所認為由siloxene構結所貢獻並不相同，而530 nm特性峰可能由表面能態或是Si-H、Si-O-H相關鍵結所造成。
第二部份則利用Thermal CVD法，以N2、O2及C10H14O5Ti為反應物來成長TiO2奈米結構。結果顯示隨著基板溫度不同以及距離Ti反應物的遠近，會形成不同形態以及不同晶相之產物。420℃~485℃為anatase薄膜，500℃~535℃為anatase nanowall，560℃~605℃為高方向性anatase 奈米柱，630℃~655℃且距Ti反應物較遠處則為rutile奈米柱。藉由TEM分析可知rutile及anatase奈米柱皆為單晶。利用UV-Vis吸收光譜繪製之Tauc plot可得anatase nanowall及奈米柱之光學能隙為3.2 eV而rutile 奈米柱則為3.0 eV。

The growth characteristics of one dimensional nc-Si/SiOx composite nanowires using SiCl4/H2 as well as oxygen absorbed on chamber wall in a hot-filament chemical vapor deposition reactor were investigated in this study. The composite nanowires were grown on various substrates by non-VLS mechanism at lower substrate temperatures in comparison with polycrystalline film formed at high temperature. Structural and compositional characterizations of the nanowires by TEM and electron energy-loss spectroscopy (EELS) indicate that dendritic self-assembly of Si nanorods are embedded in the amorphous SiOx nanowires. PL analyses of the nc-Si/SiOx composite nanowires show a blue-green light emission at room temperature.

Aligned rutlie and anatase TiO2 nanorods as well as anatase TiO2 nanowalls have been synthesized using a template- and catalyst-free CVD method. Formation of various crystal phases and morphologies of TiO2 nanostructures were dependent on the substrate temperatures as well as the distances between the Ti source and the substrates. Anatase films, nanowalls and well-aligned nanorods were formed at substrate temperatures of 420~485℃, 500~535℃ and 560~605℃, respectively. Rutile nanorods were grown at substrate temperatures of 630~655℃ in a longer distance between Ti source and substrate. TEM analyses indicate that rutile and anatase TiO2 nanorods were both single crystalline. Optical characterizations of the TiO2 nanostructures show that the bandgap of anatase and rutile phase were 3.2 as well as 3.0 eV, respectively.

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