本研究針對四種不同結構的氧化鋅奈米線陣列，分別為水熱法製程的純氧化鋅奈米線陣列、氫氣退火的孔洞氧化鋅陣列、退火半小時的同源氧化銦鋅奈米線陣列以及退火兩小時的同源氧化銦鋅奈米線陣列進行整片奈米線陣列的熱電性質分析，利用PECS在奈米線陣列兩端上鍍上鈦金電極以進行整片的Seebeck係數以及利用兩點量測方式量測整片奈米線陣列的電導率而計算出奈米線陣列的熱電功率函數(thermoelectric power factor)。結構分析上分別用掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、能量散佈光譜(EDX)以及X-Ray 繞射分析此四種不同氧化鋅奈米線陣列的表面形貌與其結構分析，並且探討其微結構以及組成之間的差異等等對於熱電參數的影響。其中氫氣退火的孔洞氧化鋅之導電度比水熱法的氧化鋅大4個數量級，且其熱導係數是四者奈米結構中最低，homologous In2O3(ZnO)n隨著退火時間越長，其賽貝克係數越大，最後本實驗特別針對整片量測與單根量測上的熱電性質差異提出直觀又合理的物理解釋機構。

In this work, we study thermoelectric properties of homologous In2O3(ZnO)m and porous nanowires synthesized by hydrothermal method.we use the solid-state diffusion process to create homologous In2O3(ZnO)m nanowires. Porous nanowires were grown in H2 annealing conditions. By comparing the structural difference of In2O3(ZnO)m and porous ZnO nanowires array, we can know how structural difference change conductivity, carrier concentration, Seebeck coefficient, figure of merit (ZT). As a result, we found out that porous ZnO nanowires compared with a typical ZnO nanowire by hydrothermal method possesses more superior electrical conductivity. As annealing duration increases, the Seebeck coefficient of homologous In2O3(ZnO)m increases. In order to let our samples can be commercialized in the future rather than an academic research. So we choose to measure thermoelectric properties of nanowires array instead of a single nanowire. Moreover,we figure out a Physical mechanism to successfully explain why there are difference Seebeck coefficient between array and single.

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