本論文研究利用硝酸銀及氫氟酸之蝕刻溶液於P型(100)矽基板上形成奈米柱狀結構。然後使用甲烷與氫氣及利用具有高沉積速率與能提供大量氫自由基特性的電場輔助熱鎢絲化學氣相沉積法(Bias-assisted HWCVD) 在奈米柱狀結構的矽基板成長非晶奈米鑽石薄膜。再濺鍍上各種不同的金屬氧化物(ZnO、SnO2、WO3等)作為感測層。最後蒸鍍鈀作為催化劑及電極，並在背面鍍上鋁金屬完成一氧化碳感測器。
吾人利用Raman、XRD量測原子間的鍵結與薄膜結晶; SEM與AFM觀察表面結構與粗糙度及HP4145半導體量測分析儀進行元件I-V量測。利用電場輔助所沉積的奈米鑽石薄膜具有較高的崩潰電壓、高能隙，及較高的熱導率，故可以操作在較高的溫度。
實驗結果顯示，奈米柱狀結構增加了感測器與氣體的接觸面積，因此也相對提升了感測器的靈敏度。相較於未使用奈米柱狀結構者，其靈敏度由304%提升至797%。另外，在三種不同的金屬氧化物中，以WO3當感測層者，不論是在低或高濃度的一氧化碳都有最佳的表現: 例如在100℃，3V逆偏壓及100ppm的CO的環境下，其靈敏度為53%，在300℃，3V逆偏壓及3000ppm的CO的環境下，其靈敏度提高為3700%。且擁有良好的再現性反應。反應時間約為6秒。相較於已發表文獻在260℃/3500ppm 條件下Au/WO3/ SiN /Si MIS Schottky diode 的108%為佳。除外，對於其他氣體的選擇性感測也有很好的效果。

In this thesis, firstly the P (100)-Si substrates were etched by AgNO3 mixed HF solution to form nanorod structure. Then we deposited Pd/MOX/diamond thin films sequentially on the nanorod to develop all nanorod structure PIN Schottky diode for high sensitivity CO gas sensing under high temperature applications. A bias-assisted hot-wire chemical vapor deposition (HWCVD) system was applied to prepare the diamond film from H2 and CH4 gas mixture for getting better quality film, and thus the higher breakdown voltage and thermal stability. Besides, we analyze the diamond film quality using Raman, XRD, SEM and AFM, respectively for bond structure measurement, analyzing, crystallinity, examination of surface roughness as well as morphology.
Experimental results show that with and without the nanorod structure, the sensitivity can be enhanced from 304% to 797%. Besides, three metal oxides (ZnO, SnO2, WO3) are chosen as the sensing element. Among them, the WO3 can get the shorter response time of 6 sec, good reproducibility and the highest sensitivity of 131% and 3700% respectively for 100ppm and 3000ppm CO ambient with the condition of - 3V, 300℃. The sensitivities are better than that of 108% for the reported Au/WO3/ SiN /Si MIS Schottky diode under condition of 260℃/3500ppm. Besides, the sensor with WO3 does not sense to CO2 and alcohol gas.

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