本論文旨在研究無線通訊發射機系統中的功率放大器。射頻功率放大器為提升輸入訊號之功率以利後續應用。本論文使用穩懋GaN-based HEMT製成實現操作在Ka頻段之射頻功率放大器。論文第一部分為兩顆Ka頻段1W功率放大器設計，第一顆設計使用穩懋GaN 0.25um HEMT製成，設計採兩級Class AB架構，使用傳輸線與MIM電容配合史密斯圖設計匹配網路，採用LPF架構作為主要架構。量測結果可以在26 GHz實現24 dBm輸出功率，與小訊號增益11.08 dB。
第二顆設計使用穩懋GaN 0.12um HEMT製成，輸出匹配網路改成使用二階BPF架構，使其操作頻寬相對於前次設計來的更充裕。另外在中間級匹配改善前次設計過於複雜的路徑，使用直接匹配的方式降低損耗。量測結果在S參數部分有著插入損耗19.5 dB，輸出反射損耗-8 dB與輸入反射損耗-14 dB。而大訊號量測方面，在操作頻率為28 GHz時可以達到31.5 dBm最大輸出功率，PAE達到33 %以及小訊號增益19.5 dB。在整體操作頻段27~29.5 GHz也有著不錯的特性表現。
論文第二部分為使用功率合併技術實現Ka頻段2W功率放大器設計。此設計使用穩懋GaN 0.12um HEMT製成進行製作。輸出級設計結合功率合併電路與改良式BPF架構讓整體功率放大器電路進一步提升輸出功率表現來到約35 dBm，同時還能維持著PAE約33 %，與小訊號增益約22 dB。在晶片面積上僅使用了2.15*1.1 mm2 ，整體功率密度達到1.343 W/mm2 。

This thesis aims to study power amplifiers in wireless communication transmitter systems. RF power amplifiers are used to enhance the power of input signals for subsequent applications. In this thesis, a Ka-band RF power amplifier was realized using WIN Semiconductors' GaN-based HEMT process.
The first part of the thesis involves the design of two 1W Ka-band power amplifiers. The first design employs WIN's GaN 0.25µm HEMT process, featuring a two-stage Class AB architecture. Matching networks were designed using transmission lines and MIM capacitors in conjunction with Smith charts, and an LPF architecture was adopted as the primary structure. Measurement results demonstrate an output power of 24 dBm at 26 GHz, with a small signal gain of 11.08 dB.
The second design uses WIN's GaN 0.12µm HEMT process, with the output matching network replaced by a second-order BPF structure, providing a wider operating bandwidth than the previous design. Additionally, the intermediate matching network was simplified to reduce loss by adopting a direct matching approach, addressing the complexity in the earlier design. Measured S-parameters indicate an insertion loss of 19.5 dB, output return loss of -8 dB, and input return loss of -14 dB. The design achieves a maximum output power of 31.5 dBm, a PAE of 33%, and a small-signal gain of 19.5 dB at 28 GHz for large-signal measurements. The design exhibits excellent performance characteristics across the 27–29.5 GHz operating band.
The second part of the thesis focuses on the design of a 2W Ka-band power amplifier using power combining techniques. This design was fabricated with WIN's GaN 0.12µm HEMT process. The output stage integrates a power combining circuit and an improved BPF structure to enhance overall output power performance, achieving nearly 35 dBm while maintaining a PAE of approximately 33 % and a small signal gain of around 22 dB. The chip occupies an area of just 2.15 × 1.1 mm², achieving a power density of 1.343 W/mm².

[1] F. H. Raab, P. Asbeck, S. Cripps, P. B. Kenington, Z. B. Popovic, N. Pothecary, J. F. Sevic, N. O. Sokal, "Power amplifiers and transmitters for RF and microwave," IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 3, pp. 814-826, 2002, doi: 10.1109/22.989965.
[2] Z. Zhang, K. Long, A. V. Vasilakos, and L. Hanzo, "Full-Duplex Wireless Communications: Challenges, Solutions, and Future Research Directions," Proceedings of the IEEE, vol. 104, no. 7, pp. 1369-1409, 2016, doi: 10.1109/JPROC.2015.2497203.
[3] T. S. Rappaport, S. Sun, R. Mayzus, H. Zhao, Y. Azar, K. Wang, G. N. Wong, J. K. Schulz, M. Samimi, F. Gutierrez, "Millimeter wave mobile communications for 5G cellular: It will work!," IEEE access, vol. 1, pp. 335-349, 2013.
[4] S. Shakib, J. Dunworth, V. Aparin, and K. Entesari, "mmWave CMOS power amplifiers for 5G cellular communication," IEEE Communications Magazine, vol. 57, no. 1, pp. 98-105, 2019.
[5] D. M. Pozar, Microwave and RF Design of Wireless Systems. Wiley, 2000.
[6] R. Sun, J. Lai, W. Chen, and B. Zhang, "GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review," IEEE Access, vol. 8, pp. 15529-15542, 2020, doi: 10.1109/ACCESS.2020.2967027.
[7] V. Camarchia, R. Quaglia, A. Piacibello, D. P. Nguyen, H. Wang, and A.-V. H. Pham, "A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. 68, pp. 2957-2983, 2020.
[8] K. Ma, S. Mou, and F. Meng, "A review of recent power amplifier IC," in 2017 10th Global Symposium on Millimeter-Waves, 2017: IEEE, pp. 87-91.
[9] S. C. Cripps, RF Power Amplifiers for Wireless Communications. Artech House, 1999.
[10] H.-W. Choi, S. Choi, J.-T. Lim, and C.-Y. Kim, "Highly Linear Ka-Band CMOS Linear Power Amplifier Using T-Shape Linearizer With pMOS," IEEE Microwave and Wireless Technology Letters, vol. 33, pp. 1179-1182, 2023.
[11] B. Park, S. Jin, D. Jeong, J. Kim, Y. Cho, K. Moon, B. Kim, "Highly linear mm-wave CMOS power amplifier," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 12, pp. 4535-4544, 2016.
[12] H. Xie, Y. J. Cheng, Y. R. Ding, L. Wang, and Y. Fan, "A C-Band High-Efficiency Power Amplifier MMIC With Second-Harmonic Control in 0.25 μm GaN HEMT Technology," IEEE Microwave and Wireless Components Letters, vol. 31, no. 12, pp. 1303-1306, 2021, doi: 10.1109/LMWC.2021.3106196.
[13] X. Jiang, C. Bo, X. Wu, Q. Dong, S. Yang, K. Wei, X. Liu, W. Luo, "A Simple Design Method for Harmonic-Tuned GaN MMIC Power Amplifier Using Real-to-Real LPF Matching Network," IEEE Microwave and Wireless Technology Letters, vol. 34, no. 5, pp. 528-531, 2024, doi: 10.1109/LMWT.2024.3376573.
[14] G. R. Nikandish, R. B. Staszewski, and A. Zhu, "A Fully Integrated Reconfigurable Multimode Class-F2,3 GaN Power Amplifier," IEEE Solid-State Circuits Letters, vol. 3, pp. 270-273, 2020, doi: 10.1109/LSSC.2020.3013430.
[15] M. Gilasgar, A. Barlabé, and L. Pradell, "A 2.4 GHz CMOS class-F power amplifier with reconfigurable load-impedance matching," IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 66, no. 1, pp. 31-42, 2018.
[16] V. Bhagavatula, W. C. Wesson, S.-K. Shin, and J. C. Rudell, "A fully integrated, regulatorless CMOS power amplifier for long-range wireless sensor communication," IEEE journal of solid-state circuits, vol. 48, no. 5, pp. 1225-1236, 2013.
[17] J. Kim, "Highly Efficient Asymmetric Class-F−1/F GaN Doherty Amplifier," IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 9, pp. 4070-4077, 2018, doi: 10.1109/TMTT.2018.2839195.
[18] R. C. Li, RF Circuit Design. Wiley, 2012.
[19] A. Shirvani and B. A. Wooley, Design and Control of RF Power Amplifiers. Springer, 2003.
[20] G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design. Prentice Hall, 1997.
[21] M. L. Edwards and J. H. Sinsky, "A new criterion for linear 2-port stability using a single geometrically derived parameter," IEEE Transactions on microwave theory and techniques, vol. 40, no. 12, pp. 2303-2311, 1992.
[22] A. Grebennikov, N. O. Sokal, and M. J. Franco, Switchmode RF and Microwave Power Amplifiers. Academic Press, 2012.
[23] A. Alizadeh, M. Frounchi, and A. Medi, "On design of wideband compact-size Ka/Q-band high-power amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 6, pp. 1831-1842, 2016.
[24] H. Wang, C. Sideris, and A. Hajimiri, "A CMOS Broadband Power Amplifier With a Transformer-Based High-Order Output Matching Network," IEEE Journal of Solid-State Circuits, vol. 45, pp. 2709-2722, 2010.
[25] Y. Wang, J. Zhang, Y. Chen, J. Ren, and S. Ma, "A 4.5-W, 18.5–24.5-GHz GaN Power Amplifier Employing Chebyshev Matching Technique," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 31, no. 2, pp. 233-242, 2023, doi: 10.1109/TVLSI.2022.3225967.
[26] G. L. Matthaei, "Tables of Chebyshev impedance–transforming networks of low-pass filter form," Proceedings of the IEEE, vol. 52, no. 8, pp. 939-963, 1964, doi: 10.1109/PROC.1964.3185.
[27] J. C. Mayeda, D. Y. C. Lie, and J. Lopez, "A Highly Efficient 18–40 GHz Linear Power Amplifier in 40-nm GaN for mm-Wave 5G," IEEE Microwave and Wireless Components Letters, vol. 31, no. 8, pp. 1008-1011, 2021, doi: 10.1109/LMWC.2021.3085241.
[28] L. Peng, S. Lin, J. Chen, J. Li, and G. Zhang, "Ka-band 1 W GaN MMIC Power Amplifier Design," 2021 IEEE International Conference on Signal Processing, Communications and Computing (ICSPCC), pp. 01-04, 2021.
[29] P. Neininger, L. John, F. Thome, C. Friesicke, P. Brückner, R. Quay, T. Zwick, "Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC," IEEE Transactions on Microwave Theory and Techniques, vol. 69, pp. 2541-2553, 2021.
[30] P. Neininger, L. John, M. Zink, D. Meder, M. Kuri, A. Tessmann, C. Friesicke, M. Mikulla, R. Quay, T. Zwick, "Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers," IEEE Microwave and Wireless Components Letters, vol. 32, no. 6, pp. 708-711, 2022, doi: 10.1109/LMWC.2022.3166563.
[31] Y.-M. Chen, L.-Y. Lee, T.-H. Chen, C.-S. Wu, and H. Wang, "A Ka-band High-OP1dB Power Amplifier in 0.15-μm GaN Process for 5G Base Station and Satellite Communications Applications," 2022 Asia-Pacific Microwave Conference (APMC), pp. 593-595, 2022.
[32] J.-D. Jin and S. S. H. Hsu, "A 0.18-um CMOS Balanced Amplifier for 24-GHz Applications," IEEE Journal of Solid-State Circuits, vol. 43, pp. 440-445, 2008.
[33] R. Giofrè, P. Colantonio, F. Costanzo, F. Vitobello, M. Lopez, and L. Cabria, "A 17.3–20.2-GHz GaN-Si MMIC balanced HPA for very high throughput satellites," IEEE Microwave and Wireless Components Letters, vol. 31, no. 3, pp. 296-299, 2021.
[34] B. Cimbili, C. Friesicke, F. V. Raay, S. Wagner, M. Bao, and R. Quay, "High-Efficiency Watt-Level E-band GaN Power Amplifier with a Compact Low-loss Combiner," in 2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, 22-25 Jan. 2023 2023, pp. 42-44, doi: 10.1109/PAWR56957.2023.10046243.
[35] A. Brown, K. Brown, J. Chen, D. Gritters, K. Hwang, E. Ko, N. Kolias, S. O'Connor, M. Sotelo, "High power, high efficiency E-band GaN amplifier MMICs," in 2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS), 2012: IEEE, pp. 1-4.
[36] J. Kamioka, Y. Tarui, Y. Kamo, and S. Shinjo, "54% PAE, 70-W X-Band GaN MMIC Power Amplifier With Individual Source via Structure," IEEE Microwave and Wireless Components Letters, vol. 30, no. 12, pp. 1149-1152, 2020, doi: 10.1109/LMWC.2020.3031273.
[37] L. Zhang, K. Ma, and H. Fu, "A 60-GHz 32-Way Hybrid Power Combination Power Amplifier in 55-nm Bulk CMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 71, no. 2, pp. 613-627, 2023, doi: 10.1109/TMTT.2022.3208034.
[38] R. Smolarz, K. Staszek, S. Gruszczynski, and K. Wincza, "Broadband Monolithic GaN Balanced Amplifier Composed of Mixed Cascade-Tandem Directional Couplers and Cascode Stages," IEEE Access, vol. 11, pp. 129425-129435, 2023.
[39] Z. Zhao, X. Zhu, J. Xia, R. Liu, P. Chen, L. Zhang, P. Chen, C. Yu, "A GaN MMIC Load-Modulated Balanced Amplifier With Modified Output Coupler for Efficiency Enhancement Over a Larger Power Back-Off Range," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 70, pp. 3373-3377, 2023.
[40] K. Nakatani, A. Hirai, J. Kamioka, T. Yao, K. Saiki, and S. Shinjo, "A 24 GHz 14 W/22 W GaN Power Amplifier MMICs for Millimeter Wave band Wireless Power Transfer," in 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 23-24 Sept. 2024 2024, pp. 279-282, doi: 10.23919/EuMIC61603.2024.10732067.
[41] R. Giofrè, A. Piacibello, V. Camarchia, and P. Colantonio, "A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range," IEEE Microwave and Wireless Technology Letters, vol. 34, no. 3, pp. 314-317, 2024, doi: 10.1109/lmwt.2024.3350435.
[42] S. C. Cripps, Advanced Techniques in RF Power Amplifier Design. Artech House, 2002.
[43] J. H. Tsai, "A 5.3-GHz 30.1-dBm Fully Integrated CMOS Power Amplifier With High-Power Built-In Linearizer," IEEE Microwave and Wireless Technology Letters, vol. 33, pp. 431-434, 2023.