氧化鋅薄膜為一高透光率的材料，故具有不錯之透明度，在本研究中，我們希望能將氧化鋅薄膜當作微波透明基板使用，因此將針對氧化鋅薄膜之微波特性做研究與量測，其微波特性包含了相位常數、介電係數、衰減常數以正切損，在其量測過程中，我們將使用TRL校正來做一輔助，使量測到之微波特性能更接近材料原始特性。
在經過微波特性量測後，發現將氧化鋅薄膜置於室溫之下以射頻磁控濺鍍機成長在氧化鋁基板上，再經過快速熱退火之後，可得到一組較佳之特性，並將量測出來之特性運用來製作一天線，藉由天線的量測結果，來驗證氧化鋅薄膜的微波特性量測是否正確。

When it comes to the ZnO film, it is a type of high transmittance materials. In this thesis, we would like to apply it as microwave transparent substrate, so we have to measure microwave characteristics of ZnO film which includes phase constant, dielectric constant, attenuation constant and loss tangent. During measuring process, the TRL calibration plays an assistant role to make the measurement parameters approach original material characteristics more.
After measuring the microwave characteristics, we found out, when the ZnO film was deposited on Al2O3 substrate by RF sputter at room temperature and annealed by rapid thermal annealing, we could extract a set of better characteristics of ZnO film so as to apply it to design an antenna, proving the microwave characteristics of ZnO film.

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