本研究以數值方法對未來450mm快速熱處理機台的建構做可行性分析。模擬直徑450厘米之晶圓快速加熱10秒由300K升溫到1300K和加熱後維持固定溫度並降溫的情形。在整個加熱過程中有許多因素會使得晶圓表面溫度分佈不均勻，在此使用六環,八環與九環之加熱燈環對晶圓加熱，分析不同燈環數目的加熱燈對晶圓表面溫度分佈的影響。由於六環加熱燈之間的空隙較大，造成晶圓表面徑向溫度落差太大，而使用八個燈環數目以上的加熱燈則能改善這樣的問題。

此外燈環的排列位置不同也會對晶圓表面照射熱量分佈有差異，尤其是晶圓最外圍靠近冷腔壁的部份，若調整適當的燈環間距就可使晶圓得到良好的熱補償。另外討論腔體通入氣體的影響,氣體的加入會使腔體內部產生熱對流效應,這影響著晶圓的表面溫度,也使得燈環功率必須提高以滿足升溫條件。對於燈環功率調整的部分,為了達到加熱時晶圓表面溫度均勻的要求,每個燈環必須每隔0.05秒調整功率一次。

In this thesis, the feasibility of the RTP process for 450 mm silicon wafer is studied numerically. During the process,the wafer is heated by lamps from room temperature to the designated process temperature rapidly and maintain at that temperature thereafter.

The effects of six, eight, and nine-rings heating zones on the temperature uniformity of the wafer are studied. It is found that eight-rings or more heating zones results in more acceptable wafer temperature distribution. In addition, to achieve the temperature uniformity required, the powers of the heating lamps have to be adjusted every 0.05 second at least.

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