研究生: |
朱鴻鎧 Chu, Hung-Kai |
---|---|
論文名稱: |
以液相成長三氧化二鋁研製增強型氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體 Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Liquid Phase Deposited Aluminum Oxide |
指導教授: |
王永和
Wang, Yeong-Her |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
論文出版年: | 2016 |
畢業學年度: | 104 |
語文別: | 英文 |
論文頁數: | 97 |
中文關鍵詞: | 氮化鋁鎵/氮化鎵 、高電子遷移率電晶體 、閘極掘入 、鈍化層 、液相沉積法 、三氧化二鋁 |
外文關鍵詞: | AlGaN/GaN, high electron mobility transistor, gate recess, passivation, liquid-phase deposition, Al2O3 |
相關次數: | 點閱:141 下載:2 |
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氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體,載子產生的機制是由氮化鋁鎵/氮化鎵的異質接面之間的晶格不匹配而產生高濃度的二維電子氣,因此元件多為空乏型電晶體。空乏型電晶體有諸多缺點,常開的狀態使得元件有額外的耗能,電路設計也更加複雜。本研究成功利用閘極掘入技術,將閘極下方主動層蝕刻至較薄的厚度,進而減少二維電子氣的濃度,達到臨界電壓偏移至正的區域;另外,減少主動層的厚度也能增加閘極對通到的控制能力。為了降低元件閘極漏電流以及提升三端崩潰電壓的特性,我們以液相成長三氧化二鋁薄膜作為我們的閘極介電層及鈍化層。
我們以液相成長三氧化二鋁以及閘極掘入技術完成增強型高電子遷移率電晶體。元件臨界電壓成功提升至0.67 V,最大電流密度達到472 mA/mm,最大轉換電導值達到155 mS/mm,次臨界擺幅與電流開關比為142 mV/dec與1.33×109,閘極漏電流有效降低至2.87 × 10-6 mA/mm,三端崩潰電壓提升至186 V。
The high sheet-carrier concentration in AlGaN/GaN high-electron-mobility transistors (HEMTs) is attributed to the lattice mismatch in the AlGaN/GaN structure interface. Therefore, HEMTs are often operated in depletion mode (D-mode, normally activated). However, D-mode operation presents many disadvantages, such as additional power consumption and complex circuit design. In this work, we used the gate-recess technique to reduce the thickness of the barrier layer and shift the threshold voltage values from negative to positive. The reduction of the barrier layer thickness can promote the controllability of the gate. Liquid-phase-deposited Al2O3 was used as gate dielectric and passivation layers to reduce the gate leakage current and increase the off-state breakdown voltage.
Enhancement-mode (E-mode) metal–oxide–semiconductor HEMTs (MOSHEMTs) were obtained by LPD-Al2O3 and gate-recess techniques. The E-mode MOSHEMTs exhibited a threshold voltage that shifted to 0.67 V, with maximum drain current of 472 mA/mm and maximum transconductance of 155 mS/mm. In addition, the subthreshold swing is 142 mV/dec, the on/off ratio is 1.33×109, and the gate leakage current was decreased to 2.87×10−6 mA/mm, whereas the breakdown voltage was increased to 186 V.
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