| 研究生: |
黃益順 Huang, Yi-shun |
|---|---|
| 論文名稱: |
串聯式有機白光元件之研究 The studies of tandem organic white-emissive devices |
| 指導教授: |
溫添進
Wen, Ten-Chin |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2007 |
| 畢業學年度: | 95 |
| 語文別: | 中文 |
| 論文頁數: | 97 |
| 中文關鍵詞: | 二極體 、白光 |
| 外文關鍵詞: | white emissive, light emitting diodes |
| 相關次數: | 點閱:51 下載:1 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
在本研究中,利用黃光高分子元件去串聯藍光小分子元件的方式而製作出串聯式的白光元件,首先我們利用XPS去分析聚氧化乙烯與鋁界面之間因化學反應所產生結構為何,為延續實驗室先前的結果持續的作進一步的分析探討。
在串聯式白光元件的部分首先我們引入了PEO/Al/MoO3的結構當成串聯式元件的連接單元,並且發現在MoO3厚度為4nm時可使電子電洞在不同發光層中平均的結合而達到上下層元件均可發亮的結果,在元件設計上的改進以及調整不同的厚度實驗下讓我們得到了一個高純度及高穩定性的白光元件CIE為(0.34,0.33)。
HY-PPV is a high yellow emitting material. We want to connect the Blue emissive device to form a good white light tandem device. Combine with our forward research of PEO/Al cathode; we want to using for a good connecting layer of tandem device.
The result of XPS measurement implies that the enhancement of electron-injection ability is attributed to the formation of C-Al between PEO and the depopsited Al. The MoO3 layer needs to align the correct thickness in order to balance the hole and electron generation. In our experiment the correct thickness of MoO3 is 4 nm.
Change the connecting layer Al, HY-PPV layer, and NPB layer thickness can modify the device emitting color intensity ratio. The best condition is NPB (20 nm), Al (4.5 nm), HY-PPV (1800 rpm).
參考文獻
1. M. Pope, H. Kallmann, and P. Magnante, J. Chem. Phys. , 38, 2024, 1963.
2. P. S. Vincett, W. A. Barlow, R. A. Hann, and G. G. Robert, Solid Thon Films. 94, 171, 1982.
3. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. , 51, 913, 1987.
4. J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, and A. B. Holmes, Nature, 347, 539, 1990.
5. Karl Ziemelis, Nature, 399, 3, 1999.
6. http://www.oled-info.com/
7. http://163.23.210.150/oled/index.htm
8. R. H. Friend, R. W. Gymer, A. B. Holmes, J. H. Burroughes, R. N. Marks, C. Taliani, D. D. C. Bradley, D. A. Dos Santos, J. L. Bredas, M. Logdlund, and W. R. Salaneck, Nature, 397, 121, 1999.
9. 95年11月工業材料雜誌235期
10. S. A. VanSlyke, C. W. Tang, L. C. Roberts, US 4, 720, 432, 1988.
11. R. Duggal, J. J. Shiang, C. M. Heller, D. F. Foust, Appl. Phys. Lett.,80, 3470, 2002.
12. Z. G. Liu, H. Nazare, Syntb. Met. 111, 47, 2000.
13. R. H. Jordan, A. Dosabalapur, M. Strukelj, T. M. Miller, Appl. Phys. Lett. 68, 1192, 1996.
14. B. W. D’Andrade, M. E. Thompson, S. R. Forrest, Adv. Mater., 14, 147, 2002.
15. B. W. D’Andrade, M. E. Thompson, S. R. Forrest, A. B. Chwang, Appl. Phys. Lett., 83, 3858 ,2003.
16. S. Lamansky, P. Djurovich, D. Murphy, F. Abdel-Razzaq, R. Kwing, I. Tsyba, M. Bortz, B. Mui, R. Bau, M. E. Thompson, Inorg. Chem., 40, 1704 ,2001.
17. R. J. Holmes, B. W. D’Andrade, X. Ren, J. Li, M. E. Thompson, S. R. Forrest, Appl. Phys. Lett., 82, 3818 ,2003.
18. R. J. Holmes, S. R. Forrest, Y. J. Tung, R C. Kwong, J. J. Brown, S. Garon, M. E. Thompson, Appl. Phys. Lett., 82, 2422 ,2003.
19. M. F. Lamorte and D. Abbort, Solid-State Electron. 22, 467, 1979.
20. J. K. Kim, E Hall, O. Sjolund, and L. A. Coldern, Appl. Phys. Lett. 74, 3251 ,1999.
21. X. Guo, G. D. Shen, G. H. Wang, W. J. Zhu, J. Y. Du, G. Gao, and D. S. Zou, Appl. Phys. Lett. 79, 2985 ,2001.
22. T. Matsumoto, T. Nakada, J. Endo, K. Mori, N. Kawamura, A. Yokoi, J. Kido, Peoceedings of IDMC’03,p.413, Fed. 18-21, 2003, Taipei, Taiwan.
23. J. Huang, M. Pfeiffer, A Werner, J. Blochwitz, K. Leo, and S. Liu, Appl. Phys. Lett. 80, 139 ,2002.
24. B. W. D’Andrade, S. R. Forrest, and A. B. Chwang, Appl. Phys. Lett. 83, 3858 ,2003.
25. J. Kido and T. Matsumoto, Appl. Phys. Lett. 73, 2866 ,1998.
26. Tzung-Fang Guo, Fuh-Shun Yang, and Zen-Jay Tsai,Ten-Chin Wen and Sung-Nien Hsieh, Appl. Phys. Lett. , 88, 113501, 2006.
27. Tzung-Fang Guo, Fuh-Shun Yang, and Zen-Jay Tsai,Ten-Chin Wen and Sung-Nien Hsieh, Appl. Phys. Lett. , 87, 013504, 2005.
28. Shizuo Tokito, Koji Noda and Yasunori Taga, J. Phys. D., 29, 2750-2753, 1996.
29. Hiroshi Kanno, Russell J. Holmes, Yiru Sun, Stephane Kena-Cohen, and Stephen R. Forrest, Adv. Mater., 18, 339-342, 2006.
30. K. A. Higginson, X. Zhang, F. Padaimitrakoppulos, Chem. Mater., 10, 1017, 1998.
31. S. A. VanSlyke, C. H. Cjen, C. W. Tang, Appl. Phys. Lett., 69, 2160, 1996.
32. X. Y. Deng, W. M. Lau, K. Y. Wong, K. H. Low, H. F. Chow, and Y. Cao, Appl. Phys. Lett. , 84, 3522, 2004.
33. Sutcliffe, W.W. Lee, J.F. Gaynor, J.D. Luttmer , D. Martini , J. Kelber ,M.A. Plano, Applied Surface Science, 126, 43–56, 1998.
34. T.P. Nguyen, J. Ip, P. Jolinatb, P. Destruel,Applied Surface Science 172, 75-83, 2001.
35. 陳金鑫,黃孝文,OLED有機電激發光材料與元件,五南圖書2005年出版。