近年來，以氧化鉿鋯(HZO)作為鐵電層的電容與電晶體被廣泛的研究，因為其相較於磁阻式記憶體有更優異的耐久性；與電阻式記憶體相比具有良好的雜訊抗擾性且比起靜態記憶體能展現更好的可微縮性，因此氧化鉿鋯鐵電記憶體成為下一世代記憶體應用的選擇之一。
隨著製程技術不斷的發展，為了能在相同面積上做更多元件，3D製程也開始受到大家的重視。由於3D製程需要在後段製造電晶體或電容器，但超過350℃的製程溫度可能造成含鋁的金屬連線受到損傷，所以低溫的條件在後段的製程中非常重要。
因此這篇論文主要研究以氧化鉿鋯為鐵電層的電容在330℃的退火溫度下，其極化曲線、耐久值以及保留值的表現，並探討在原子層層積中不同的兩種氧化鉿鋯前驅物在低溫退火下的結果，最後我們發現由四二甲胺基鈦(TDMA)鉿和四二甲胺基鈦鋯為前驅物沉積的鐵電薄膜具有免喚醒的特色，適合應用於非揮發性記憶體中。

In recent years, the use of hafnium zirconium oxide (HZO) as the ferroelectric layer of capacitor and transistor has been widely studied. Because of it’s higher endurance than magnetic memory, higher immunity towards flicker noise than resistive memory and higher bit density than SRAM, HZO ferroelectric memory is an ideal candidate from next generation memory application.
With the rapid development of process technology, 3D fabrication starts to gain attention in order to fabricate more devices in the same area. The transistors or capacitors need to be fabricated in the Back End of Line (BEoL) of 3D fabrication. However, it will cause damage to the metal lines which contain aluminum if the process temperature is higher than 350°C. Thus, low processing temperature is an important conditions in BEoL processing.
This thesis focuses on the PV、endurance and retention performance of ferroelectric capacitors which uses HZO as ferroelectric layer at an annealing temperature of 330°C. We also discussed about the performance of HZO precursors used in atomic layer deposition (ALD) at low annealing temperatures. Finally, we found that the ferroelectric films deposited by tetrakis dimethylamino(TDMA) hafnium and tetrakis dimethylamino zirconium are suitable for non-volatile memory applications because of their wake-up free characteristics.

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