本論文主要是藉由設計不同結構之無電極遮光製程結構，配合高反射鏡面、雙面粗化技術、晶圓貼合技術以及雷射剝離技術，製備具高效率、高亮度以及高散熱之無電極遮光發光二極體元件，探討不同結構設計下元件之光電與熱的特性，並透過模擬驗證元件表面發光強度分布，最後與一般傳統水平製程發光二極體作比較。

無電極遮光氮化鎵發光二極體在研製過程中，在適當參數下使用表面粗化與高反射鏡面，提供較佳的發光效率，使得無電極遮光效果應加顯著，並且透過結構設計與基板置換，使得元件在高電流注入下，加速散熱速度並降低元件效率下降效應，避免電極遮光問題，大幅度提升元件亮度。

本實驗架構中，我們特別比較：原始藍寶石基板之發光二極體/具p-GaN粗化、垂直式無電極遮光結構發光二極體/具高反射鏡面矽基板、翅膀型無電極遮光結構發光二極體/具高反射鏡面矽基板三種結構。特性分析部分，在100mA三種結構元件在-5V，漏電流皆小於-2uA條件下，翅膀型和垂直式無電極遮光結構之元件輸出功率分別為74 mW和57.7mW，比一般水平結構的47.7mW分別增加約55.1%和21%；表面溫度量測結果得知，翅膀型無與垂直式電極遮光結構的表面溫度分為58.1°C和76.7°C，而一般水平發光二極體的表面溫度約為84.86°C。
實驗結果顯示，垂直式與翅膀型無電極遮光製程在高電流操作下，皆可有效提升元件發光效率，雷射剝離後並保有良好磊晶膜特性，其中以翅膀型無電極遮光製程結構為最佳結構設計。

In this study, various structural designs of embedded electrodes GaN LEDs with high reflection mirror on Si have been fabricated by the double-side roughness, laser lift-off and wafer bonding technology. Moreover, the optoelectronic performances, thermal analyses and light distribution simulations on the surface of these embedded electrodes LEDs were investigated and compared with conventional LEDs.

For the fabrication of embedded electrodes structure GaN LED, the good optoelectronic performance can be achieved by optimizing of the surface roughness and high reflection mirror processes. The electrode-shading loss was eliminated by designing LEDs structures. Furthermore, substrate transfer was used to reduce the droop efficiency and enhance the thermal dissipation.

Various LEDs structures in this thesis include conventional lateral LED, wing type embedded electrodes LED and vertical imbedded electrodes LED. At an injection current of 100 mA, the output powers of wing type, vertical and conventional lateral LEDs were 74, 57.7 and 47.7 mW, respectively. The output powers for the wing type and vertical LEDs have 55.1% and 21% enhancement compared to conventional lateral LED, respectively. It reveals that the wing type LED has a significant improvement in the light extraction. For the wing type, vertical and conventional lateral LEDs, the surface temperatures were measured to be 58.1, 76.7 and 84.86 °C, respectively. It indicates that the wing type and vertical LEDs with embedded electrodes structures exhibit high performance in light extraction and keep the good quality of epitaxial layer after laser lift-off, especially for the wing type embedded electrodes structure.

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