為了改善傳統轉置方法對於石墨烯品質的影響，本研究於二氧化矽基板上濺鍍銅、鎳薄膜作為化學氣相沉積製程中的催化金屬，進行免轉置石墨烯的成長。在高溫下，銅鎳鍍膜會形成銅鎳合金，其中銅用來控制石墨烯的析出沉積，鎳則是用來控制石墨烯的厚度，透過最佳化銅鎳鍍膜的厚度與組成、碳源濃度、腔體壓力以及成長溫度等合成參數，成長出高品質的免轉置石墨烯。
在1000 ℃與腔體壓力為90 torr的環境下，以組成比例為95% Cu/5% Ni，厚度700 nm的銅鎳鍍膜作為催化基材，成功的不需透過轉置步驟直接成長高品質的雙層石墨烯於矽基板上。

In our study, we propose to deposit patterned Cu and Ni thin films on the silica substrate to enable transfer-free growth of patterned graphene via CVD method. At elevated temperature, deposited Cu and Ni thin films formed Cu-Ni alloy to serve as the metal catalyst for graphene growth. In this case, Cu layer was employed as a segregation controller and Ni layer worked as the thickness controller of the synthesized graphene film. The effects of following parameters, including the total thickness and composition of deposited metal films, the concentration of carbon source, chamber pressure and the growth temperature, were systematically investigated to optimize the synthesis process. In conclusion, we successfully synthesized the transfer-free graphene at 1000 ℃ under a chamber pressure of 90 torr with the 95% Cu/5% Ni metal film of 700 nm in the total thickness. According to the statistical analysis of Raman measurements recorded from the synthesized graphene films, we demonstrated that with the optimal synthesis parameters, the produced transfer-free graphene composed of ~2 layered graphene films with low defect intensity.

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