在本研究中為了達到理想的太陽能電池緩衝層硫化鎘薄膜，並使其具有良好的穿透性、結晶性以及表面形貌，因此針對硫化鎘薄膜作下列幾個部份的探討研究:首先利用現成阻值為15Ω的ITO玻璃作為基板沉積硫化鎘薄膜，針對不同的沉積溫度進行硫化鎘薄膜的材料特性以及光電特性的量測。之後則是將最佳沉積溫度條件固定，再分別用不同的酸鹼值(pH)沉積硫化鎘薄膜，再藉由量測分析取得最佳酸鹼值(pH)。之後固定溫度、酸鹼值，再作硫濃度的調變。
作為一個薄膜太陽能電池緩衝層須具有良好的穿透率，理想厚度約為10~50nm，吾人調整沉積時間藉此降低厚度，使其達到理想的厚度。
吾人調變參數為溫度、酸鹼值(pH)、硫濃度、時間。綜合起來最佳硫化鎘沉積條件是溫度80oC、pH=8.5、硫濃度0.09M、時間40min，再將沉積於MO/CIS基板上，藉此去探討元件特性。

In this study, in order to achieve the ideal CdS buffer layer of thin film solar cells, and makes it has good transmittance、crystallinity and surface morphology. Therefore, we do some researches of CdS thin films, and divided the results into the following several parts : First, we use 15 Ω/□ ITO glass as the substrate and then deposit CdS thin films in different temperature condition. Second, the material and optical properties of CdS thin films would be measured.
After the optimum deposition temperature reached, we deposited CdS thin films in different pH conditions, trying to find optimum pH values for thin film deposition. Finally, we fix the optimum temperature and pH conditions, modulating sulfur concentration to find ideal elemental composition.
As a thin film solar cells, the buffer layer should have good transmittance, and the ideal thickness is about 50~100 nm. We reduce the thickness of buffer layer by adjusting the deposition time to reach the desired thickness.
We modulate parameters such as temperature, pH, thiourea concentration and deposition time. Consequently, the best conditions are temperature 80oC, pH 8.5, thiourea concentration 0.09M, and deposition time 40 min, individually. Combining these best CdS deposition conditions, we deposit CdS thin films on MO/CIS-substrate and discuss the characteristics of the device.

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