隨著互補金屬氧化物半導體（CMOS）技術的進步，元件尺寸已經進入奈米等級。電子元件在運作時有著更顯著的波特性。非平衡格林函數（NEGF）方法在處理奈米級電子元件的量子效應是一種實用的分析方法。
在本論文的開始，我們利用緊束縛理論來計算不同厚度的矽能帶結構。再從能帶結構中獲得能帶間隙、縱向及橫向的等效質量。我們通過使用緊束縛理論將量子限制效應納入能帶結構計算中，探討量子參數對雙柵極金氧半場效應電晶體（DG MOSFET）的影響。利用nanoMOS 4.0模擬器，我們使用量子彈道傳輸模型計算DG MOSFET中的漏極電流。
最後，我們為了抑制短通道效應，選擇穿隧能障接面（TBJ）MOSFET結構。為了進一步提高TBJ MOSFET的性能，我們嘗試使用單能障結構。當單能障設置於源極端時，它仍然具有抑制短通道效應的能力，並且具有比TBJ MOSFET更高的驅動電流。

As complementary metal–oxide–semiconductor (CMOS) technology progresses, device dimensions have been scaled into the nanometer regime. The electronic devices would show more pronounced wave characteristics of carriers when operating. The non-equilibrium Green’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical.
At the start of this thesis, we calculated the band structure based on the tight-binding theory. The calculations of band structure used to extract band gap, longitudinal and transverse effective electron masses. Then, we explore the impact of the parameter of confinement modulated on double-gate (DG) MOSFET, by explicitly incorporating the quantum confinement effects in the band structure calculations using the tight-binding theory. Using the nanoMOS 4.0 simulator, we calculate the drain current in DG MOSFET using the quantum ballistic transport model.
At last, we choice the tunneling barrier junction (TBJ) MOSFET structure in order to suppress the short channel effects (SCE). To further enhance the TBJ MOSFET performance, we try to use single barrier structure. The single barrier at source structure which still have ability of SCE suppression, and have higher drive current than TBJ MOSFET.

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