此篇論文中，主要藉由低溫水熱法成長金屬修飾氧化鋅奈米結構，並分別應用到紫外光之金屬-半導體-金屬結構感測器和場發射器元件之應用，其中論文主軸可分為三部份，第一部分主要分為二個段落(1) 鎵摻雜氧化鋅奈米片紫外光感測器之研究(2) 不同摻雜鎵濃度於氧化鋅奈米柱紫外光感測器之研究；第二部分為銀奈米粒子修飾氧化鋅奈米柱紫外光感測器之研究；最後為銀奈米粒子修飾氧化鋅奈米柱紫外光場發射元件之研究。
在本文一開始，本章節主要分為二個段落。(1) 藉由低溫水熱法成長垂直排列的鎵摻雜氧化鋅奈米片。鎵摻雜氧化鋅奈米片具有六角纖鋅礦結構及尖銳的表面形態，平均長度和直徑估計為720和26 nm。我們成功製造出鎵摻雜氧化鋅奈米金屬-半導體-金屬紫外光感測器。施加1V偏壓，其紫外光對可見光的拒斥比約為81，元件量測光響應度為2.83 × 10-5 A/W。在低頻雜訊的分析，此光感測器的等效雜訊功率估計為5.92 × 10-9 W，其相對應檢測度2.24 × 109 cm·Hz0.5W−1。(2) 我們利用水熱法於非晶氧化鋅晶種層/玻璃基板上成長氧化鋅奈米柱應用於金屬-半導體-金屬紫外光感測器。施加1V偏壓，不同摻雜鎵濃度於氧化鋅奈米柱分別為0.25、0.5、和1mM，測量元件得到光響應度分別為2.2×10-2、14.9、和14.1 A/W。結果說明改變鎵濃度可用於控制感測器的光響應。此外，在低頻雜訊的分析，測量等效雜訊功率估計分別為1.06 × 10−9， 3.13 × 10−11，和1.29 × 10−10 W,，其相對應檢測度估計分別為1.24 × 1010，4.21 × 1011，和1.01 × 1011 cm·Hz0.5W−1。對比於不同摻雜濃度之氧化鋅奈米柱，鎵(0.5mM)摻雜之氧化鋅奈米柱擁有最佳的光電特性。
論文第二部分，本研究主要是以新穎之水熱法成長銀奈米粒子修飾氧化鋅奈米柱應用於金屬-半導體-金屬紫外光感測器。施加0.2V偏壓，測量感測器元件之光響應度估計為12.4 A/ W，而相應紫外光對可見光的拒斥比約為4478。此外，在低頻雜訊的分析，測量光感測器的等效雜訊功率估計為4.85 × 10−11 W，其相對應檢測度估計為2.72 × 1011 cm·Hz0.5W−1。這樣的結果說明銀奈米粒子修飾氧化鋅奈米柱紫外光感測器有非常好的實用性。
最後，我們成功通過低溫水熱法成長銀奈米粒子修飾氧化鋅奈米柱，並應用到場發射器元件之應用。元件於暗箱和紫外光照射兩種條件量測之下，所得場發射元件具有較低起始電場分別約為3.93和2.04 V/μm，而場增強因子分別約為1,593和57,872，這可以歸咎於能帶彎曲和更多的電子積累在吸附的銀奈米粒子，使得電子可以更容易從銀奈米粒子發射。

In this dissertation, the metal-modified ZnO nanostructures were grown on an a-ZnO seed layer via the low-temperature hydrothermal method (90 °C) and applied to metal semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) and field emission devices. This dissertation is divided into three parts. In the first part, Ga-doped ZnO nanosheet-based (MSM) ultraviolet (UV) photodetectors are investigated and Ga-doped ZnO nanorods (NRs) with different Ga concentrations are synthesized for application to an MSM UV PD. In the second part, the synthesis of Ag nanoparticle (NP)-decorated ZnO NR MSM UV PDs is discussed. Finally, the third part discusses the synthesis of Ag NP-decorated ZnO NR field emitters under UV illumination.
The beginning of this dissertation is divided into two sections. First, vertical Ga-doped ZnO nanosheets are synthesized on a ZnO-seeded glass substrate via the hydrothermal method at low temperature and used to fabricate a GZO NS MSM UV PD. The average length and average diameter of the interwoven GZO nanosheet was 720 and 26 nm. The measured cutoff wavelength of the PDs was 340 nm when biased at 1 V, and the measured fabricated PD responsivity was 2.85 × 10-5. The corresponding UV-to-visible rejection ratio was approximately 81 when biased at 1 V. The noise equivalent power (NEP) of the fabricated GZO NS MSM PD was 5.92 × 10-9 W, and its specific detectivity was 2.24 × 109 cm • Hz0.5 • W-1. The fabrication of ZnO NRs doped with various Ga concentrations on a ZnO-seed layer/glass substrate via the low temperature hydrothermal method is then presented. Ga-doped ZnO (GZO) NR-based UV PDs were fabricated under a bias of 1 V. The measured device responsitivities of the ZnO NRs doped with 0.25, 0.5, and 1 mM Ga were 2.2 × 10−2, 14.9, and 14.1 A/W, respectively. Varying the Ga concentration allowed control of the responsivity of the fabricated PDs. Under a bandwidth of 1 kHz and applied bias of 1 V, the NEP of the GZO NR PDs with 0.25, 0.5, and 1 mM Ga were 1.06 × 10−9, 3.13 × 10−11, and 1.29 × 10−10 W, respectively, and their corresponding detectivities were 1.24 × 1010, 4.21 × 1011 W, and 1.01 × 1011 cm•Hz0.5•W−1.
In the second part of this dissertation, Ag NP-decorated ZnO NR arrays were synthesized on a ZnO-seeded glass substrate using a novel and simple hydrothermal method. Under an applied bias of 0.2 V and incident light wavelength of 380 nm, a UV PD based on the Ag NP-decorated ZnO NRs showed a high responsivity of 12.4 A W with a corresponding UV-to-visible rejection ratio of 4478. The noise spectrum of the UV PD was obtained using pure 1/f noise, and the NEP of the fabricated Ag NP-decorated ZnO NR MSM PD was found to be 4.85 × 10−11 W; a detectivity of 2.72 × 1011 cm·Hz0.5·W−1 was also observed.
Finally, Ag NP-decorated ZnO NRs were successfully synthesized on a glass substrate via the hydrothermal method at a low temperature of 90 °C and used to fabricate Ag NP-decorated ZnO NR field emission devices. The resulting Ag NP-decorated ZnO NRs of ultra-turn-on field was reduced to approximately 3.93 and 2.04 V/μm in the dark and under UV illumination, respectively, and the corresponding field enhancement factors were 1,593 and 57,872. These results indicate that the enhanced FE of Ag NP-decorated ZnO NRs can be attributed to the effective formation of potential wells on the surfaces of the Ag NPs, which collect electrons by field emission from the Ag NPs to the vacuum level to enhance field emission.

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