近年來，由於磊晶技術的突飛猛進，使得發光二極體的發光效率大幅提升，以四元AlGaInP元件而言，其內部量子效率已達90%以上，但是因為其GaAs為吸光基板，而且散熱不佳，若要應用在大面積、高功率、高效率的照明上，恐會有所限制。本論文提出以區塊電鍍鎳基板、撘配化學濕蝕刻置換GaAs基板，並於n+-GaAs layer上濺鍍具透明導電銦鋅氧化物 (Indium-Zinc-Oxide, IZO)作為電流擴散層(Current Spreading Layer)，製作高亮度金屬基板結構LED，以解決傳統四元LED包括元件散熱不良、低光通量與發光不均等諸多方面的問題，期望可對新世代LED光源之開發提供助益。
本論文所研製的金屬基板四元元件，搭配氨水與鹽酸系列溶液蝕刻基板與M.Q.W，製作n-side up、p-side up以及具IZO金屬基板AlGaInP元件，其發光層並未因為任何濕蝕刻造成元件特性破壞。於具IZO金屬基板n-side up 紅光元件製作上，利用金屬點狀分布與n+-GaAs layer做歐姆接觸，再沉積300 nm的IZO薄膜以達到電流均勻分布與增加光輸出功率。實驗結果顯示，在工作電流20 mA下，因為鎳基板在電鍍過程中或經過高溫退火後，與磊晶介面產生應力，造成與磊晶界面不佳、鎳金屬導電率下降，導致串聯電阻過高，比傳統四元元件增加了大約60%，順向電壓大約增加0.1~0.2 V，但是金屬基板結構元件，除了n-side up結構因為電流擴散層過薄，導致發光分布不均勻之外，p-side up 結構因為具有較大的電流擴散層(GaP~9 μm)，且製程中避開鎳基板經過高溫退火製程，使得在工作電流20 mA下，光輸出功率增加了約103.2%，而具IZO金屬基板n-side up 元件，因為透明導電膜使得電流分布均勻，在工作電流20 mA下，光輸出功率增加了約116.7%，整體光輸出功率增加一倍以上。所以若能改善鎳基板應力問題，搭配IZO透明導電膜，金屬基板四元元件便能有高品質、高效率的晶粒產生，更能應用於量產上。

Recently, the light output power of light-emitting duodes (LEDs) was enhanced due to the rapid development of epitaxy technique. As a result, a high internal quantum efficiency of around 90% has been achieved for AlGaInP LEDs. However, the absorbing and poor thermal conducting of conventional GaAs substrate have hindered the further application for large area, high power, and high-efficiency illumination.
This thesis aims to tackle the challenging issues of present AlGaInP LEDs. Various methods including replacing the GaAs substrate with a selective Ni electroplating substrate by chemical wet-etching technology, depositing a transparent conducting layer atop n+-GaAs layer for the fabricating high power vertical-structured metallic substrate LEDs were proposed.
The proposed metallic substrate AlGaInP LEDs structures included n-side up abd p-side up devices, and the n-side up LEDs with a meshed Indium-Zinc Oxide (IZO) film as current spreading layer (CSL) were also fabricated. Moreover,
As compared to regular-LEDs under an injection current of 20 mA, the series resistance of metallic substrate AlGaInP LEDs was increased by about 60% and forward voltage drop was also increased by 0.10.2 V. Note that thermal annealing would account for stress at interface of the Nickel-plating substrate and epi layer for n-side up structure, resulting in the reducing of conductivity of Nickel substrate and thus the increase in series resistance of n-side up LEDs. However, the light output power (LOP) of p-side up LEDs was enhanced by about 103.2% (i.e. LOP/LOP) under an injection current of 20 mA. It could be attributed to the use of high reflector layer and avoidance of thermal stress. Furthermore, the n-side up LEDs with an IZO CSL shows an increase in LOP by about 116.7% at 20 mA, as compared to regular-LEDs. It is expected that the improvement of Nickel thermal stress and the use of IZO CSL with optimized design could further improve light power of metallic substrate AlGaInP LEDs and would be very promising for the fabrication of high power LEDs.

1.李偉吉，”具IZO透明導電層之高功率大面積垂直結構GaN-基LEDs之研製”，國立成功大學微電子工程研究所碩士論文，2006。

2.許國鋒，”利用金屬反射基板與透明電極結構進行 AlGaInP 發光二極體外部量子效率改善之研究 ”，國立成功大學微電子工程研究所碩士論文，2002。

3.Wright, A. F., and Nelson, J. S. (1995). App. Phys. Lett. 66, 3051.

4.殷尚彬，” 取代傳統照明設備 高亮度LED仍有關鍵技術待克服”， 新科技電子， 5月，2004。

5.鐘易亨，”磷化鋁鎵銦發光二極體外部量子效率的改善”，國立成功大學微電子工程研究所碩士論文，2003。

6.周以倫，”提高磷化鋁鎵銦發光二極體亮度之研究”長庚大學半導體科技研究所碩士論文，2001。

7.劉柏均，” 三五族化合物半導體晶圓接合之基本研究及應用 ”國立交通大學材料科學與工程學系博士論文，2005。

8.Joseph George, C.S. Menon, “Electrical and optical properties of electron beam evaporated ITO thin films”, Surface and Coatings Technology, 132, pp.45-48, October, 2000.

9.H. Kim, C. M. Gilmore, A. Piqué , J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, and D. B. Chrisey, “Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices”, J. Appl. Phys., 86, pp.6451-6461, December 1999.

10.S. Bhagwat, R. P. Howson, “Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films”, Surf. Coat. Technol., 111, pp.163-171, January 1999.

11.H. Kim, J. S. Horwitz, G.Kushto, “Effect of film thickness on the properties of indium tin oxide thin films”, J. Appl. Phys., 88, pp.6021-6025, November 2000.

12.李嘉元，”新型高亮度、熱穩定之晶體內部全方位反射層磷化鋁銦鎵發光二極體研製 ”，國立成功大學微電子工程研究所碩士論文，2006。

13.楊延鍇，” 磷化鋁鎵銦發光二極體接面溫度研究”長庚大學半導體科技研究所碩士論文，2006。

14.A. Zukauskas, M. S. Shur & R. Caska ,Introduction to Solid-State Lighting, Wiley, New York, (2002).

15.E. Fred Schubert, ＂LIGHT-EMITTING DIODES ＂camberidge university press, 2003.

16.陳學龍，“IZO 透明金屬薄膜之研製及其在GaN 基LED 之應用研究”，國立成功大學微電子工程研究所碩士論文，2003.

17.李玉華，”透明導電膜及其應用”，科儀新知，第十二卷，第一期，pp. 94-101， 1990。

18.洪瑞華、武東星、黃少華,＂利用晶片黏貼技術製作垂直型AlGaInP/mirror/barrier/Si發光二極體＂真空科技, 17卷2期, p27~p33。

19.D. A Vanderwater, I. -H. Tan, G. E. Höfler, D. C. Defevere, and F. A. Kish, “Hight-Brightness AlGaInP Light Emitting Diodes”, Proceedings of The IEEE, Vol.85, No. 11. November 1997, 1756.

20.Z. Huang, C. C. Lin, and D. G. Deppe, “Spontaneous Lifetime and Quantum Efficiency in Light Emitting Diode Affected by a Close Metal Mirror”, IEEE Journal of Quantum Electronics, Vol. 29. No. 12. December 1993.

21.W. S. Wong, J. Krüger, Y. Cho, B. P. Linder, E. R. Weber, N. W. Cheung, and T. Sands, “Selective UV-laser processing for lift-off of GaN thin films from sapphire substrates,” in Proc. Symp. on Light Emitting Devices for Optoelectronic Applications and State-of-the-Art Program on Compound Semiconductors XXVIII, Vol. 98-2, pp. 377-384, 1998.

22.楊於錚，”準分子雷射剝離技術應用於具鍍鎳金屬基板高功率垂直結構GaN基LEDs之研究”，國立成功大學微電子工程研究所碩士論文，2005。

23.吳晉坤，”銦鋅氧化物透明導電薄膜應用於高功率GaN基LED之研究”，國立成功大學微電子工程研究所碩士論文，2004。