本研究使用溶液式高介電材料鋯鈦酸鋇做為五環素有機薄膜電晶體之絕緣層材料，並展現出優異的電晶體特性:高場效載子遷移率(7.31cm2/V-1S-1)。本實驗更藉由鋁及部分自發氧化的氧化鋁做為浮動閘極及穿隧層，利用臨界電壓的改變來探討不同電壓對於載子注入及排出的影響，結合高介電常數及浮閘結構之優點，降低了記憶體之操作電壓並展現出了良好的非揮發性記憶體之特性:低操作偏壓(±10V)、大的記憶視窗(4.5V)、超過103秒的記憶時間。最後透過閘極電流的分析，來探討載子傳輸機制。

In this thesis, we prepared a solution-processed high-κ barium zirconate titanate as a gate dielectric for pentacene-based organic thin film transistor applications. The performance of the transistor showed a high field-effect mobility of 7.31 cm2/V·s. Furthermore, we utilized Al and spontaneously oxidized Al2O3 as the floating gate and the tunneling layer, respectively. The charge and discharge effects with different gate voltages were discussed by Vt shift. By combining the advantages of high-κ dielectric and floating gate structure, the device effectively reduced the operation voltage and showed good performance of nonvolatile memory characteristic, with a low operation voltage of ±10 V, a large memory window of 4.5 V, and a long retention time of 103 s. We also analyzed mechanism injection by gate current fitting to understand the carrier injection mechanism through the oxide.

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