一般多層複合材料當薄膜厚度在奈米尺寸時，會有優異的光電性質。在近年來發展多層膜材料系統應用於光電元件的研究日趨重要，因此對於螢光激發光(Photoluminescence)在多層複合膜行為的探討是必要的。而我們可藉由分析材料表面、內部及介面的結構變化去探討發光的特性及機制。由文獻可知，碳與矽是兩種常被用來分析的半導體材料，而碳化矽薄膜或奈米顆粒可由碳和矽膜經熱退火反應完成，且文獻報導矽的存在可以改善碳的穩定性和附著力，因此本論文採用超高真空物理氣相沉積法進行矽/碳/矽多層奈米複合薄膜的成長與光電性質檢測研究，探討製程及多層膜材料結構以及碳化矽奈米顆粒對於發光性質之效果，進而找出最佳化複合薄膜製程參數組合，以及進行不同最佳製程參數組合製造多層奈米複合膜於光電元件發光特性分析。從實驗結果發現，退火後的兩層矽/碳複合膜經雷射激發後產生了白光，此現象經過一系列的材料分析結果推論可能的原因為退火後的兩層矽/碳複合膜產生了多種奈米結構包含了碳化矽奈米顆粒 (np-SiC)，矽奈米晶粒 (nc-Si)，碳化矽奈米晶粒 (nc-Si)以及碳膜中較多的sp2團簇形成所致。由於四種不同的結構其能隙皆不相同導致電子電洞對在複合時產生耦合的效果並強化了放光的強度。由光激發螢光光譜可發現，所形成的寬廣PL波峰可以經過高斯擬合出四個不同位置的波依序為藍光 (~420 nm), 綠光 (~490 nm), 綠-黃光 (550 nm) and 橘光 (~650 nm) 的放射，經過文獻比較可以發現此四個波即為上述之四種結構所產生。此外於熱穩定性的分析發現，上層的矽膜有助於類鑽碳膜的機械性質穩定，其硬度經過退火後的平均值約為18.72 GPa，此原因可能是高溫退火後所形成的碳化矽補強其機械性質。於三層矽/碳/矽結構中，發現此結構有助於於相對低溫的退火處理形成結晶的碳化矽奈米顆粒，此外三層結構相對於兩層結構的矽/碳多層膜有較強的光激發螢光行為其推論為較多的奈米複合結構形成所致。

Nano multi-layer films generally have the advantages of superior photoluminescence (PL) behavior. Multilayer material systems are increasing important in the development of smaller, faster and more efficient electronic and optoelectronic devices. Carbon and silicon are two common semiconductor materials. In addition, The SiC film or nanoparticles can be formed using thermal annealing of C and Si films and the existence of Si is beneficial for the C stability and adhesion. In this thesis, we establish the technologies of nano multi-layer films fabrication and property characterization in the single, two and three layers. We perform the basic measurement of optoelectronic behaviors by PL instruments including the composition, phase, microstructure, chemical bonding, morphology and PL spectra. Afterwards, we study the thermal stability and do the optimization of process parameters for future different application and establish the relationship between the layer thickness and number, microstructure, composition and optoelectronic properties. We also study the mechanism of PL principles in the nano multi-layer films as well as thermal stability at high temperatures.
From the experiment results, two-layer Si/C films showed the white PL behavior due to the synthesis of nanocomposite consisting of np-SiC, nc-Si, nc-SiC and sp2 carbon clusters from the rapid thermal annealing of double layer Si/C films on Si (100). The broad visible band can be deconvoluted into four Gaussian-fitted bands of blue (~420 nm), green (~490 nm), green-yellow (550 nm) and orange (~650 nm) emission, respectively, corresponding to the emission from nc-SiC, sp2-carbon clusters, np-SiC and nc-Si. In addition, The Si/C films showed the good thermal stability with the average hardness of 18.72 GPa during elevated annealing temperature through the effectively SiC formation. From the three-layer Si/C/Si films, the synthesis of crystalline np-SiC at a lower temperature of 750 °C has been successfully demonstrated using ultra-high-vacuum ion beam sputtering and RTA. Finally, we study the mechanism and efficiency of the advanced optoelectronic properties of the nano multi-layer films as well as using the optimized conditions for the application of EL devices, which will be directly applied to the product fabrication.

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