利用低溫交聯性聚乙烯苯酚介電材料作為可撓曲性有機薄膜電晶體之絕緣層。比較元件受伸展及壓縮應力時元件光電特性的改變情形，用電性的結果去推論pentacene薄膜受應力時的變化；再分析薄膜彎曲時之拉曼光譜圖，發現藉由1158 cm-1之Davydov-splitting計算出分子間的耦合能以及使用Gaussian Lorentzian 函數去擬合出拉曼峰值的半高寬兩種方法，可以佐證pentacene薄膜彎曲時微結構的變化與元件特性載子遷移率有關。再利用此介電材料作為有機薄膜電晶體之修飾層，以氧氣電漿接觸介電層表面改變其表面能；從電性的結果得知，臨界電壓因介電層表面受氧氣電漿處理過而變好；由拉曼光譜分析可得知pentacene成長於不同表面能介電層上結構的不同，並利用X-ray繞射分析發現pentacene成長在愈不匹配表面能介電層上，分子長軸與介電層法線方向夾角愈大且亂度愈大成非結晶態，結晶區域大小也有較大趨勢；最後利用原子力顯微鏡觀察pentacene表面形態，發現pentacene成長在與其表面能38.5 mJ/m2最接近的介電層上，分子的排列成各自方向性最為整齊，對照其元件特性表現亦是最佳。

Low temperature crosslinking poly-vinylphenol (PVP) was successfully used as gate dielectric of flexible organic thin-film transistors (OTFTs). Comparing the electro-optical characteristic differences between the devices suffered tensile and compressive strains; the characteristic variation of pentacene thin-film is significant under tensile state. The relation between the field-effect mobility and the change of pentacene thin-film microstructure under bend state can be interpreted by the coupling energy of pentacene molecules arising from Davydov splitting at 1158 cm-1 of Raman spectrum. Furthermore, PVP was also used as modifier layer of SiO2 gate dielectric for pentacene-based OTFTs. In order to improve threshold voltage the PVP film was treated within O2 plasma environment. When the exposed time of the O2 plasma was increased, pentacene molecules arrange disorderly and aggregate in smaller crystalline size due to increase of the surface energy of PVP dielectric. Finally, the order morphology of pentacene film is highly relative to surface energy of dielectric from the measurement of atomic force microscope. Dielectric surface energy closed 38.5 mJ/m2 of pentacene film; molecule structure has higher ordering and homogeneity.

[1]. A Pochettino, Acad. Lincei Rendic., vol. 15, p.355 (1906).
[2]. A. Szent-Gyorgi, “Towards a new biochemistry?”, Science, vol. 32, p. 609 (1941).
[3]. C. K. Chiang, C. R. Fincher, Y. W. Park, A. J. Heeger, H. Shirakawa, E. J. Louis, S. C. Gau, and A. G. MacDiarmid, “Electrical conductivity in doped polyacetylene”, Physical Review Letters, vol. 39, p. 1098 (1977).
[4]. F. Garnier, R. Hajlaoui, A. Yassar, P. Srivastava, “All-Polymer Field-Effect Transistor Realized by Printing Techniques”, Science 265, 1684 (1994).
[5]. G. A. de Wijs, C. C. Mattheusa, R. A. de Groot, T. T. M. Palstra, Synth. Met. 139,109 (2003).
[6]. R. sterbacka, C. P. An, X. M. Jiang and Z. V. Vardeny, “Two-Dimensional Electronic Excitations in Self-Assembled Conjugated Polymer Nanocrystals”, Science 287, 839 (2000).
[7]. Y. Sun, Y. Liu and D. Zhu, “Advances in organic field-effect transistors”, J. Mater. Chem. 15, 53 (2005).
[8]. 陳儒賢, “不同介電材料之表面能對pentacene複晶薄膜所產生之應力的研究”, 碩士論文, 國立成功大學 (2006).
[9]. L. Torsi, A. Dodabalapur, L. J. Rothberg, A. W. P. Fung and H. E. Katz, “Intrinsic Transport Properties and Performance Limits of Organic Field-Effect Transistors”, Science, 272, 1462 (1996).
[10]. T. Holstein, Ann. Phys., 8, 343 (1959).
[11]. S. Kojima, “Low-frequency Raman investigation of the liquid-glass transition in glycerol”, Phys. Rev. B, 47, 2924 (1993).
[12]. E. M. Conwell, H. Y. Choi and S. Jeyadev, “Transverse polaron bandwidth in trans-polyacetylene”, J. Phys. Chem., 96, 2827 (1992).
[13]. J. H. Schön, C. Kloc and B. Batlogg, “Low-temperature transport in high-mobility polycrystalline pentacene field-effect transistors”, Phys. Rev. B, 63, 125304 (2001).
[14]. M. Pope, C. E. Swenberg, Electronic Processes in Organic Crystals and Polymers, 2nd ed., Oxford University Press, Oxford 1999, pp.353-360
[15]. 買昱椉, “五環素薄膜初期成長機制研究”, 博士論文, 國立成功大學 (2007).
[16]. T. W. Kelley, D. V. Muyres, P. F. Baude, T. P. Smith, T. D. Jones, “High Performance Organic Thin Film Transistors”, Mater. Res. Soc. Symp. Proc. 771, 169 (2003).
[17]. T. Minakata, H. Imai, M. Ozaki, K. Saco, “Structural studies on highly ordered and highly conductive thin films of pentacene”, J. Appl. Phys. 72, 5220 (1992).
[18]. C. D. Dimitrakopoulos, A. R. Brown, A. Pomp, “Molecular beam deposited thin films of pentacene for organic field effect transistor applications”, J. Appl. Phys. 80, 2501 (1996).
[19]. R. Ruiz, B. Nickel, N. Koch, L. Feldman, R. Haglund, A. Kahn, G. Scoles, “Pentacene ultrathin film formation on reduced and oxidized Si surfaces”, Phys. Rev. B 67, 125406 (2003).
[20]. F. Barbe and C. R. Westgate, “Surface state parameters of metal-free phthalocyanine single crystals”, J. Phys. Chem. Solids 31, 2679 (1970).
[21]. M. L. Petrova, L. D. Rozenshtein, and Fiz. Tverd. Tela, “Field effect in the organic semiconductor chloranil”, Sov. Phys.-Solid State 12, 961 (1970).
[22]. A. Tsumura, H. Koezuka, and T. Ando, “Macromolecular electronic device: Field-effect transistor with a polythiophene thin film”, Applied Physics Letters, 49, 1210 (1986).
[23]. S. H. Lee, D. J. Choo, S. H. Han, J. H. Kim, Y. R. Son, J. Jang, “High performance organic thin-film transistors with photopatterned gate dielectric”, Applied Physics Letters, 90, 033502 (2007).
[24]. R. Ruiz, A. Papadimitratos, A. C. Mayer and G. G. Malliaras, “Thickness dependence of mobility in pentacene thin-film transistors”, Adv. Mater., 17, 1795 (2005).
[25]. D. Knipp, R. A. Street, A. Völkel, J. Ho, “Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport”, J. Appl. Phys. 93, 347 (2003).
[26]. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, W. Weber, “High-mobility polymer gate dielectric pentacene thin film transistors”, J. Appl. Phys. 92, 5259 (2002).
[27]. A. C. Mayer, M. L. Swiggers, C. J. Johnson, J. L. Mack, Z. T. Zhu, R. L. Headrick, G. G. Malliaras, in Thin Film Transistor Technologies (ED: Y. Kuo), Electrochemical Society, Pennington, NJ 2002, p.288
[28]. 王之傑, “製作於軟性基板的高分子有機薄膜電晶體之研究”, 碩士論文, 國立成功大學 (2007).
[29]. M. D. Austin, S. Y. Chou, “Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography”, Applied Physics Letters 81, 4431 (2002).
[30]. S. M. Sze, Semiconductor Devices Physics and Technology, 2nd, p.187.
[31]. John R. Ferraro, Kazua Nakamoto, Chris W. Brown, “Introductory Raman spectroscopy”, 2nd edition, Academic Press, Boston, p. 15 (2003).
[32]. A. S. Davydov, “Theory of Molecular Excitons”, McGraw-Hill, New York, p. 21 (1971).
[33]. T. M. Nedungadi, Proc. Indian Acad. Sci., 15, 376 (1942).
[34]. L. Colangeli, V. Mennella, G. A. Baratta, E. Bussoletti and G. Strazzulla, “Raman and infrared spectra of polycyclic aromatic hydrocarbon molecules of possible astrophysical interest”, Astrophys. J., 396. 369 (1992).
[35]. 汪建民主編, “材料分析”, 材料科學叢書2, 四版 (2005)
[36]. D. Gamota, J. Zhang, P. Brazis, K. Kalyanasundaram, “Printed organic and molecular electronics”, Kluwer Academic Publishers (2004).
[37]. T. Sekitani, Y. Kato, S. Iba, H. Shinaoka, T. Someya, T. Sakurai, S. Takagi, “Bending experiment on pentacene field-effect transistors on plastic films”, Applied Physics Letters 86, 073511 (2005).
[38]. G. Gu, M. G. Kane, S. C. Mau, “Reversible memory effects and acceptor states in pentacene-based organic thin-film transistors”, J. Appl. Phys. 101, 014504 (2007).
[39]. Sangyun Lee, Bonwon Koo, Joonghan Shin, Eunkyong Lee, Hyunjeong Park, “Effects of hydroxyl groups in polymeric dielectrics on organic transistor performance”, Applied Physics Letters 88, 162109 (2006).
[40]. W. J. Kim, C. S. Kim, S. J. Jo, S. W. Lee, S. J. Lee, H. K. Baik, “Observation of the Hysteresis Behavior of Pentacene Thin-Film Transistors in I–V and C–V Measurements”, Electrochemical and Solid-State Letters 10, H1-H4 (2007).
[41]. M. Shtein, J. Mapel, J. B. Benziger, S. R. Forrest, “Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors”, Appl. Phys. Lett. 81, 268 (2002).
[42]. H. L. Cheng, Y. S. Mai, W. Y. Chou, L. R. Chang, X. W. Liang, “Thickness-Dependent Structure Evolutions and Growth Models in Relation to Carrier Transport properties in Polycrtstalline Pentacene Thin Films”, Advanced Functional Materials, accepted (2007).
[43]. R. He, I. Dujovne, L. Chen, Q. Miao, C. F. Hirjibehedin, A. Pinczuk, C. Nuckolls, C. Kloc, A. Ron, “Resonant Raman scattering in nanoscale pentacene films”, Appl. Phys. Lett. 84, 987 (2004).
[44]. A. Weinstein, R. Zallen, in Light Scattering in Solids IV (Eds: M. Cardona,G. Güntherodt), Springer, Berlin, p. 500. (1984).
[45]. S. Y. Yang, K. Shin, C. E. Park, “The Effect of Gate-Dielectric Surface Energy on Pentacene Morphology and Organic Field-Effect Transistor Characteristics”, Adv. Funct. Mater. 15, 1806 (2005).
[46]. J. Lee, K. Kim, J. H. Kim, S. Im, D. Y. Jung, “Optimum channel thickness in pentacene-based thin-film transistors”, Appl. Phys. Lett. 82, 4169 (2003).
[47]. J. Lee, J. H. Kim, S. Im, D. Y. Jung, “Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors”, J. Appl. Phys. 96, 2301 (2004).
[48]. L. F. Drummy, D. C. Martin, “Thickness-Driven Orthorhombic to Triclinic Phase Transformation in Pentacene Thin Films”, Adv. Mater. 17, 903 (2005).
[49]. 張癸森, “以低溫電漿提昇吸附材表面性質”, 碩士論文, 中原大學 (2001).
[50]. A. Rolland, J. Richard, J.-P. Kleider and D. Mencaraglia, “Electrical Properties of Amorphous Silicon Transistors and MIS-Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations”, J. Electrochem. Soc. 140, 3679 (1993).
[51]. L. E. Alexander, “X-ray Diffraction Methods in polymer science”, Wiley, New York, 429 (1969).
[52]. G. Horowitz, “Organic thin film transistors: From theory to real devices”, J. Mater. Res. 19, 1946 (2004).
[53]. S. J. Kang, M. Noh, D. S. Park, H. J. Kim, C. N. Whang, C. H. Chang, “Influence of postannealing on polycrystalline pentacene thin film transistor”, J. Appl. Phys. 95, 2293 (2004).