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研究生： 藍偉倫
Lan, Wei-Lun
論文名稱： 以P型的鉻氧化物薄膜應用在單層銦化鎵的藍光二極體光電特性
Optoelectronic Characterization of p-Type Transparent Chromium Oxide Conductive Thin Films for Application in single layer of InGaN Blue Light-Emitting Diodes
指導教授： 賴韋志
Lai, Wei-Chih
學位類別： 碩士
Master
系所名稱： 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年： 2026
畢業學年度： 114
語文別： 中文
論文頁數： 84
中文關鍵詞： 藍光發光二極體 、鉻氧化物 、三氧化二鉻 、透明導電薄膜 、溶膠-凝膠法 、光電特性
外文關鍵詞： Blue light-emitting diode, Chromium oxide, Transparent conductive layer, Sol-gel process, Optoelectronic properties
相關次數： 點閱：15  下載：0 
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    • 本研究探討了以p型三氧化二鉻(Cr₂O₃)導電薄膜作為InGaN藍光發光二極體(Bluet Light-Emitting Diode, Blue LED)透明導電層的應用及其光電特性。透過溶膠-凝膠法製Cr₂O₃薄膜，改變薄膜的厚度並以不同退火溫度、退火時間處理後，沉積於單層InGaN上，分析其對元件光電性能的影響。實驗結果顯示，Cr₂O₃薄膜在適當退火溫度下(680°C)且持溫90分鐘應用在元件上時給正偏壓有較大的電流且漏電流最小，所以 Cr₂O₃在這個爐管條件下有相對好的結晶性和對 InGaN影響較小，其中又以薄膜較厚元件特性表現較佳。

    This study investigates the application of p-type chromium(III) oxide (Cr₂O₃) conductive thin films as transparent conductive layers for InGaN blue light-emitting diodes (Blue LEDs) and evaluates their optoelectronic characteristics. Cr₂O₃ thin films were fabricated using the sol–gel method. The films were prepared with different thicknesses and subjected to various annealing temperatures and annealing durations before being deposited onto single-layer InGaN substrates. The effects of these processing conditions on the optoelectronic performance of the devices were systematically investigated.
    The experimental results indicate that devices incorporating Cr₂O₃ thin films annealed at 680°C for 90 minutes exhibited higher forward-bias current and lower leakage current than those processed under other conditions. These results suggest that Cr₂O₃ thin films annealed under these conditions possess relatively good crystallinity while exerting minimal influence on the InGaN layer. Furthermore, devices with thicker Cr₂O₃ films demonstrated superior overall electrical characteristics.

    摘要 III 致謝 VIII 目錄 X 圖目錄 XII 表目錄 XIV 第一章 緒論 1 1-1 研究背景 1 1-2 研究動機與目的 2 第二章 理論背景 3 2-1 發光二極體原理 3 2-2 接面崩潰(Reverse Breakdown) 7 2-3 載子的複合機制 9 2-4 量子局限效應(Quantum confinement effect) 11 2-5 典型的發光二極體(LED)的結構 12 2-6 量子局限斯塔克效應 (Quantum-confined Stark effect，簡稱QCSE) 13 2-7 發光二極體的熱效應 14 2-8 發光二極體的電子溢流 (Electron Overflow) 15 2-9 電流擁擠效應 (Current Crowding Effect，簡稱CCE) 16 2-10 發光二極體的發光效率 17 2-11 氮化鎵的螺紋錯位 (Threading Dislocations, TDs)與V型缺陷(V-shaped defect ) 18 第三章 透明導電薄膜實驗製程與材料介紹 19 3-1 材料介紹 19 3-1-1 氧化鉻(Cr2O3)特性介紹 19 3-2 實驗材料以及藥品規格 19 3-3 P型材料實驗流程 21 第四章 單層InGaN藍光發光二極體元件設計與製程 25 4-1 單層InGaN藍光發光二極體元件設計與製程 25 4-1-1 元件結構 25 4-1-2 單層InGaN Blue LED元件結構 26 4-2 試片表面清潔 27 4-3 元件高台(Mesa)製程 28 4-4 N型接觸電阻製程 29 4-5 P歐姆反射器製程 29 4-5-1 P型鉻氧化物薄膜製程 29 第五章 實驗結果與討論 30 5-1 InGaN基板的表面型態及PL量測 30 5-2 P型銅鉻氧化物在InGaN上表面形貌分析 31 5-3 P型鉻氧化物光電結果分析 43 5-4 P型鉻氧化物應用在單層InGaN Blue LED光電特性分析 49 5-5 PCB製備及背面發光分析 62 第六章 結論與未來展望 67 6-1 結論 67 6-2 未來展望 68 第七章 參考文獻 69

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