鎳金屬被廣泛運用於製造不鏽鋼、電鍍在金屬表面或用於製造半導體，硼則是硼矽玻璃業所需的元素；由於含鎳廢水會使人體皮膚產生紅、腫和痛等現象且含硼廢水不但會造成植物枯萎甚至會危害男性的生殖系統，因此必須將含鎳含硼廢水妥善處理。本研究針對半導體封裝業的鎳硼實廠廢水，以兩種程序除去鎳硼廢水中的鎳和硼，第一道程序為：三步驟化學沉澱，第二道程序為：流體化床均質結晶技術和鋇系化學過氧沉澱技術。以期將高濃度的鎳硼(>20,000 mg-Ni/L及>500 mg-B/L)實廠廢液處理至符合中華民國放流水標準，鎳放流水濃度0.7 mg-Ni/L、硼放流水濃度5 mg-B/L。
　　本研究分成兩部分，第一部分為使用化學沉澱處理鎳硼廢液，首先以25,000 mg-Ni/L、800 mg-B/L的合成鎳硼廢水測試化學沉澱去除率最佳的pH值參數，再透過增加沉澱的步驟，提升除鎳和除硼的效果，根據實驗結果以液鹼調整pH值之三步驟化學沉澱，條件為第一步驟pHi = 6.30、第二步驟pHi = 7.20、第三步驟pHi = 10.00的除硼效果最好，鎳總去除率為99.9%、硼總去除率為99.7%，鎳濃度為15.6 mg-Ni/L，硼濃度為2.71 mg-B/L，符合中華民國封裝半導體業硼的放流水標準5 mg-B/L。
　　將處理鎳硼合成廢水的最佳參數應用於半導體封裝業的鎳硼實廠廢液，該股鎳硼實廠廢液濃度為54,700 mg-Ni/L、4,170 mg-B/L，以三次化學沉澱處理後，鎳總去除率為99.9%、硼總去除率為99.9%，鎳濃度為56.4 mg-Ni/L，硼濃度為4.40 mg-B/L，符合中華民國硼的放流水標準5 mg-B/L。
　　將化學沉澱的汙泥烘乾後以XRD分析，發現沉澱物的組成為氫氧化鎳和氯化鈉，將沉澱物透過FTIR分析，可得知有Ni-B、Ni-O和B-O鍵結，代表氫氧化鎳和硼酸以離子鍵之形式鍵結達到除硼的效果。將沉澱物以ESCA分析沉澱物的元素，發現有鎳、氧、硼、鈉和氯，驗證XRD分析之結果，同時也佐證FTIR分析結果。
　　第二部分為使用流體化床均質結晶技術(FBHC)和鋇系化學過氧沉澱技術(COP)處理鎳硼廢水，以1,000 mg-Ni/L、2,000 mg-B/L的合成鎳硼廢水測試流體化床均質結晶技術回收鎳的最佳參數，針對pHe、LNi、HRT和床高的變因進行研究討論，根據實驗結果，最佳的操作條件為：[CO3]/[Ni] = 0.73 ± 0.1, pHe = 9.6 ± 0.2, HRT = 38.0 min, U = 37.2 m/hr, H = 45 cm, LNi = 1.48 kgm-2 hr-1，可以使鎳的結晶率(CR)達98.4%且鎳的總去除率(TR)達99.4%，出流口鎳濃度為0.94 mg-Ni/L，硼濃度為942 mg-B/L，透過XRD分析FBHC技術合成出的鹼式碳酸鎳顆粒的結構為Ni2(OH)2CO3．4H2O，最後透過化學過氧沉澱技術，在反應60分鐘後，將硼濃度降至4.80 mg-B/L，符合放流水標準。
　　將處理鎳硼合成廢水的最佳參數應用於半導體封裝業的鎳硼實廠廢水，該股鎳硼實廠廢水濃度為1,024 mg-Ni/L、99.2 mg-B/L，以流體化床均質結晶技術處理後，出流水濃度降至0.78 mg-Ni/L、44.3 mg-B/L，鎳去除率達99.9%，將此出流水以鋇系化學過氧沉澱技術處理，在[Ba] = 26.4 ± 0.1 M、[Peroxo] = 63.8 ± 0.1 M的條件，反應60分鐘後處理至0.25 mg-Ni/L、4.80 mg-B/L，符合封裝半導體業鎳和硼的放流水標準。透過FBHC顆粒化技術得到含水率低、純度高、具有回收價值及再應用性的結晶顆粒，符合循環經濟的理念。
　　將流體化床結晶顆粒烘乾後以XRD分析，得知結晶顆粒為Ni2(OH)2CO3．4H2O的鹼式碳酸鎳，將結晶顆粒透過FTIR分析，可得知有Ni-B和四面體硼的鍵結，代表鹼式碳酸鎳和硼酸以離子鍵之形式鍵結達到除硼的效果，另外透過NiOH和CO32-的鍵結，佐證具有鹼式碳酸鎳。將顆粒以SEM-EDS分析顆粒的元素，發現有鎳、氧和硼，驗證XRD分析之結果，同時也佐證FTIR分析結果。另外將顆粒以SEM拍攝，透過剖半顆粒，得知顆粒內外為同一性質的沉澱物組成，證明為均質結晶顆粒。

This study provides two methods to remove nickel and boron in nickel-boron binary-component wastewater. First method is precipitation. The three steps chemical precipitation technology by adjusting the pH value using sodium hydroxide can remove nickel and boron simultaneously. Three different pH conditions were applied during the precipitation experiment. The first precipitation pH is 6.0 - 6.5, followed by the increasing pH to 7.0 - 7.5 and 9.0 - 10.0 for the second and third precipitation, respectively. The optimum removal efficiency of 99.9% was optimized at pH 6.0 - 6.5, 7.0 - 7.5 and 9.0 - 10.0 respective to nickel and boron after three steps precipitation operation. (The concentration of real nickel-boron wastewater is 54,100 mg-Ni/L and 4,170 mg-B/L.) The precipitates were claimed as Ni(OH)2 and NaCl via SEM-EDS and XRD analyses. Attenuated total reflection-Fourier transform infrared spectroscopy provided direct evidence of inner-sphere boron complexation with surface hydroxyl groups and nickel on nickel hydroxide. Both trigonal and tetrahedral conformation of boron complexes were identified on Ni(OH)2 surfaces, and Ni-B bond also identified on Ni(OH)2 surfaces.
Second method is fluidized-bed homogeneous crystallization and barium-based chemical oxo-precipitation. The condition of real wastewater is 1,000 mg-Ni/L and 100 mg-B/L, and the operating condition of FBHC is [CO3]/[Ni] = 0.73 and pHe = 9.50 ± 0.20. The crystallization ratio of nickel is higher than 97%, and the total removal of nickel is higher than 99.5%. Using barium based chemical oxo-precipitation (COP) remove the effluent of FBHC system. The operating condition of COP is [Ba] = 26.4 ± 0.1 M、[Peroxo] = 63.8 ± 0.1 M, and the final boron concentration is lower than 4.8 mg-B/L. The particles were claimed as Ni(OH)2 and Ni2(OH)2CO3．4H2O via SEM-EDS and XRD analyses. Attenuated total reflection-Fourier transform infrared spectroscopy provided evidence of boron complexation with surface nickel on nickel carbonate basic.

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