| 研究生: |
吳明儒 Wu, Ming-Zu |
|---|---|
| 論文名稱: |
環糊精衍生物架橋性分子光阻之製備及特性研究 Study on Crosslinkable Molecular Photoresists Using Cyclodextrin Derivatives |
| 指導教授: |
劉瑞祥
Liu, Jui-Hsiang |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2007 |
| 畢業學年度: | 95 |
| 語文別: | 中文 |
| 論文頁數: | 82 |
| 中文關鍵詞: | 光酸起始劑 、環糊精 、分子式光阻 |
| 外文關鍵詞: | molecular photoresist, cyclodextrin, photo acid generator |
| 相關次數: | 點閱:108 下載:1 |
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用具有多羥基的超分子環糊精(β-cyclodextrin)及衍生物發展出不同的正、負型分子型光阻劑。分子型光阻有別於傳統高分子光阻為一種全新的光阻系統。所具有的優點如下,由於分子量較低,因此可以得到更佳的解像能力及顯影線寬;避免傳統高分子光阻劑側鏈纏繞造成物理性質不均一的缺點,可以減少影像失真和膨潤現象;並且分子量分佈一致,在微影製程中可以有良好的均一溶解性質。正型光阻劑在其主體上設計有官能基t-BOC (tert-Butoxy-carbonyl)為酸不安定保護基,高溫中進行去保護的反應進而改變曝光區溶解度達到正型光阻劑的效果。負型光阻劑利用其本身具有多羥基與戊二醛上的醛基進行交聯反應,在脫水架橋反應中我們可以得到一種全新的負型光阻系統,並且透過綠色製程以水作為顯影液。此系列的超分子型光阻經由紫外光光譜儀測試得知在248 nm和193 nm波長處具有低吸收度,故適用於目前半導體IC製程。本研究利用微影製程測試各製程參數,探討系列中光阻劑之特性表現,證明所研發之光阻劑,感度約在5mJ/cm2內即具有良好的解像能力,透過SEM觀察解析度得到最佳解像力可達1μm,並且在對比能力、乾式蝕刻能力也都有傑出的表現。
β-Cyclodextrin (CD) and its derivatives were used to fabricate positive and negative molecular photoresists. Molecular photoresist is a novel photoresist which is different than the traditional ones. The main merits of this photoresist are its low molecular weight reveals better resolution; there exists no polymer kinks leading to the improvement of image distortion; and its unique molecular weight reveals excellent solubility in developer. For positive photoresist, acid labile t-butoxy carbonyl (t-BOC) was introduced into CD. The CD derivatives were mixed with photo acid generator (PAG) to fabricate positive tone photoresist. After UV exposure and heating treatment, acid catalyzed deprotection of CD derivatives occurred and increased the solubility. Contrary to that, for negative tone photoresist, glutaraldehyde was used to crosslink CD molecules through hydroxyl groups. In these systems, water was used as developer. This process involved no organic solvent and is eco-friendly. Physical properties, contrast and the etching resistance of the photoresists were also studie. Sensitivity of 5 mJ/cm2 and resolution of 1m were achieved. UV-vis analysis revealed that the photoresist could be used as deep UV resist for ultra-fine semiconductor preparation.
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