為達到可調式光譜，使其能應用於不同抗藍光和抗UV光條件之元件，並滿足製程簡易、低成本且低毒性之材料，因此，本研究選用良好生物相容性、對環境友善且具有高度UV吸收效果之寬能隙半導體氧化鋅(3.37 eV)，與窄能隙之半導體二硫化錫(2.1 eV)，觀察其兩者是否能形成可調式能隙之複合材料。
本研究第一部分利用物理法製備混合粉末。首先利用沉澱法製備三種不同靜置時間之氧化鋅，實驗結果顯示:靜置可使氧化鋅粉末由球狀轉變成花狀，當氧化鋅形成花狀形貌時，其能隙有下降之趨勢。為了達到可調式光譜之效果，選用花狀氧化鋅，並與利用水熱法製備之二硫化錫進行物理混合。由吸收及穿透光譜可知，因物理法無法使氧化鋅及二硫化錫緊密接觸，僅是二硫化錫堆積於花狀氧化鋅表面，使兩者形成少量且結構鬆散之異質介面，因此無法產生可調式能隙之情形。
在第二部分，利用沉澱法在花狀氧化鋅製程中加入不同莫耳比例之二硫化錫，由晶體結構分析得知，靜置時間過長將產生副產物。靜置8小時之複合材料在形貌上隨著二硫化錫含量改變而有所變化，且氧化鋅與二硫化錫之接觸面積增加，並於微結構分析可看出異質介面的存在。在元素分析上，證實了氧化鋅與二硫化錫形成複合材料後，異質介面產生而出現電子流動現象。另外藉由光致發光與化學鍵結等實驗，可知隨著二硫化錫含量變化，近邊帶放射有紅移之情形，且複合材料中的氧缺陷有上升的趨勢﹐此與形成花狀之氧化鋅相同，推測由於O2-摻雜進二硫化錫，使氧化鋅產生氧空缺。在光學分析上可觀察到，隨著氧化鋅與二硫化錫莫爾比例的不同，其在光譜上呈現紅移現象，且能隙隨著二硫化錫增加而有下降的趨勢，此與氧缺陷和形成之穩固異質介面有所對應。實驗結果顯示以化學法合成之粉末將有助於發展可調式能隙之材料，應用於抗不同藍光波長之光學元件。

ZnO/SnS2 composites were successfully synthesized by simple precipitation, and using hydrothermal method to produce SnS2. The XRD patterns of ZnO/SnS2 composites show the characteristic peaks of ZnO and SnS2 without impurity. With the shift of the slow scan XRD, it can speculate than the O2- were doped into SnS2, and the oxygen vacancies appeared in ZnO. With the ratio of SnS2 increase, the flower-like composites gradually disappear into nanoparticles, which show in SEM, and shows the heterojunction between ZnO and SnS2 by TEM, XPS and PL analyses. Compare to ZnO, which can only absorb UV light, these ZnO/SnS2 composites have the absorb spectra over the wavelength range of 390 nm to 480 nm, which include UV and blue light region, and the absorption band range can be tunable by adjusting ZnO/SnS2 molar ratio and show the red shift situation. This work provides an effective strategy for the synthesis of ZnO/SnS2 composites with low cost and low toxicity, which may be considered as a promising application in the field of tunable UV and blue light shielding in the optical applications.

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