本研究使用溶液式高介電材料鋯鈦酸鍶應用於五環素有機薄膜電晶體，並利用多層溶液旋塗手法，有效降低漏電流，並且能改善介電層表面粗糙度以及表面能，使得最初幾層的五環素排列與成長狀況提升。接著利用拉曼光譜分析五環素半導體層，得知成長於雙層介電層之五環素分子之間的交互作用較為強烈且緊密。最後搭配AFM與XRD分析，驗證以雙層介電層成長五環素之電晶體具有較佳的五環素薄膜品質，因此得到良好之電晶體特性：高場效載子移動率（11.27 cm2/V·s)、低次臨界效應（224 mV/decade)、以及高電流開關比（1.28×104)。

The solution-processed high-κ strontium zirconate titanate (SZT) as gate dielectric for pentacene-based organic thin film transistor (OTFT) applications was demonstrated. In this study, multi-layered SZT process was utilized to not only suppress the leakage current, but also improve the surface smoothness and surface energy, which enhance the growth and arrangement of pentacene in first few layers. Then, Raman spectra was used to analyze the pentacene layer, showing that the intermolecular interaction was stronger for the pentacene grown on double-layered SZT dielectric. Finally, the fact that the double-layered SZT was beneficial for better quality of pentacene was confirmed by AFM and XRD analysis, and thus good performance of the transistors was exhibited, with high field-effect mobility of 11.27 cm2/V·s, low subthreshold swing of 224 mV/dec, and high on-off ratio of 1.28×104.

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