本論文主要在於研究以金屬有機氣相沉積法成長砷化鎵系列之長波長雷射及光檢測器。在雷射元件部分，我們使用了GaAsSb/GaAs、InGaAs/GaAs量子井作為發光之主動層材料，並同時加入應力補償結構以改善因高壓縮應力造成磊晶品質劣化之現象。首先我們對GaAsSb材料作磊晶參數上之最佳化，發現使用TEGa，在低AsH3、低壓力成長下有利於Sb摻入，接著我們對成長溫度及流量作探討，發現成長溫度升高時，Sb之含量降低，此時再增加TEGa流量可使得Sb含量增加，而在溫度範圍約500~550oC，TEGa流量為125~200sccm時，可得到Sb含量大於0.35。接著我們成長GaAsSb/GaAs量子井雷射元件，當Sb含量由0.23增加至0.29時，發光波長可由1117nm增加至1174nm，然而銻含量再往上增加至0.31時，便無法得到雷射之特性，因此我們改變上層cladding之成長溫度由675oC降低至600oC，用以降低此高溫對於量子井之回火效應，便可得到雷射之特性；然而在GaAsSb/GaAs量子井中有較大之價電帶不連續，使得電洞分佈不均勻造成特性劣化，因此我們改用單量子井作為主動層，結果發現Jinf由818A/cm2降低至263A/cm2。接著我們將GaAsP加入主動層中形成GaAsSb/GaAsP量子井，發現此結構之發光波長有過短之問題，因此我們將GaAs插入此結構中形成GaAsSb/GaAs/GaAsP量子井，此結構擁有較低之電子侷限能階，當GaAs為4nm時，其發光波長可達1210nm，然而此雷射在高溫操作時有雙雷射波長放光之現象，在改用非對稱結構後，可消除此現象。另外，我們在成長量子井後先將溫度降低至350oC再升至高溫開始成長cladding層，結果發現在增加此一步驟後，可有效改善雷射之特性，其Jtr由51.4 A/cm2降低至35.1 A/cm2，放光波長由1227.6nm增加至1234.1nm。
在1064nm波段之應用，我們利用In0.22Ga0.78As/GaAs量子井作為主動層，同時利用GaAs0.9P0.1/GaAs超晶格作為載子阻擋層，可使得雷射特性大幅提升，其中內部損耗僅有0.63cm-1，Jtr為39.1 A/cm2。接著我們利用In0.22Ga0.78As/GaAs三量子井作為吸光層並應用於光檢測器上，同時利用AlAs/GaAs布拉格反射鏡以增加光反射造成多次吸收的優點，在上/下層反射鏡對數為3/20對時，量子效率可達33.39%，吸收頻譜之半寬為16nm。
本論文成功的利用了應力補償、成長中斷、結構設計來改善雷射特性，顯示砷化鎵系列之光電元件在經過適當設計之後，有極佳之潛力應用於長波長之光電元件應用上。

The main purpose of the dissertation is to investigate the MOVPE growth of long wavelength lasers and photodetectors. In the laser devices, the GaAsSb/GaAs and InGaAs/GaAs QWs were used as the active medium. The strain-compensated structure was also used to improve the crystal quality. In the study of growing GaAsSb material, the TEGa for Ga source, low AsH3 flow and low reactor pressure are the key issues to increase the Sb incorporation. The Sb incorporation efficiency decreases with increasing temperature and decreasing TEGa flow. The window for high Sb incorporation (>0.35) is in the temperature range from 500 to 550oC with TEGa flow of 125-200sccm.
After optimizing the growth condition, the GaAsSb/GaAs DQW lasers with various Sb compositions were fabricated. As the Sb composition increases from 0.23 to 0.29, the lasing wavelength increases from 1117 to 1174nm. However, there is no lasing characteristic observed in the lasers with Sb composition of 0.31. The growth temperature of p-cladding layer was reduced from 675 to 600oC to reduce the unintentional annealing effect, and the lasing characteristic can be observed. In the GaAsSb/GaAs QW structure, the valance band offset between GaAsSb and GaAs is large; hence results in holes distribution non-uniform. By using SQW structure instead of DQW structure, the Jinf was reduced from 818 to 263 A/cm2. Then, the GaAsP was used in the laser structure to form stran-compensated GaAsSb/GaAsP QW structure, but the lasing wavelengths were too short. By inserting GaAs between GaAsSb and GaAsP layers to form GaAsSb/GaAs/GaAsP SQW structure, the energy level of electron can be lowered; when the thickness of GaAs is 4nm, the lasing wavelength is 1210nm. Additionally, there were two lasing peaks under high temperature operation in GaAsSb/GaAs/GaAsP SQW lasers. By using asymmetric GaAsP/GaAsSb/GaAs/GaAsP SQW structure, the two lasing peaks were reduced to one. The post-cooling treatment is also applied on the laser devices, by decreasing the substrate temperature to 350oC after QW growth and before p-cladding growth, the laser performances were improved. The Jtr is reduced from 51.4 to 35.1 A/cm2, and the lasing wavelength is extended from 1227.6 to 1234.1nm.
In the 1064nm application, the In0.22Ga0.78As/GaAs QW was used as the active medium. By using strain-compensated layer of GaAs0.9P0.1/GaAs SLs as barrier, the internal loss is only 0.63cm-1, and Jtr is 39.1 A/cm2. The photodectors were also fabricated by using In0.22Ga0.78As/GaAs TQW as absorption layer. In order to increases the quantum efficiency, the AlAs/GaAs DBR was used as the reflectors to provide more than one absorption path and increased the quantum efficiency. The maximum quantum efficiency of 33.39% with FWHM of 16nm can be obtained as the top/bottom DBR periods are 3/20.
In this dissertation, the strained compensation, growth interruption and structural design were used to improve the laser performances. It shows that the GaAs-based devices are potentional optoelectronic devices for long wavelength application after properly designing.

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