薄膜電晶體(Thin Film Transistor, TFT)為顯示器內其中一個非常重要的結構，主要用途為電壓開關，調整顯示器內各個畫素的明暗色調大小。隨著技術進步，電視或手機的畫面反應速度要求逐漸提升，也逐漸提高對於電晶體載子遷移率的大小要求；較高的載子遷移率，也能將面板的電極寬度做得更加精細。此外，在製程面而言，噴印製作因使用上靈活、低成本和圖案化簡單，不需額外使用光罩與微影而受到高度重視。然而，噴印製程的主要困難在於液滴擴散控制不易，以及咖啡環效應對於薄膜成型與特性影響。因此本論文針對噴印薄膜電晶體ZTO (鋅錫氧化物；Zinc Tin Oxide)薄膜製程面向進行探討，研究六種不同的噴印參數(包含基板加熱溫度、噴印方向、噴印速度、噴印層數、噴印帶數、噴印間距)對於元件電性的影響，並透過光學顯微鏡(OM)、表面輪廓儀(Profilometer)、穿透式電子顯微鏡(TEM)、掃描電子顯微鏡(SEM)來探究薄膜結構與電性間的關聯解釋，以提升噴印薄膜電晶體電性。
本研究針對六種不同噴印參數進行探討。第一部分為為基板加熱溫度對電性的影響，總共測試溫度30, 50, 70 oC，噴印帶數均為一帶。其中僅基板加熱溫度70oC的元件擁有TFT電性，載子遷移率為1.93 cm2/V·s，透過TEM與表面輪廓儀分析推測30 oC因為實際薄膜厚度過小(約1.1 nm)，導致無正常TFT電性。
第二部分不同噴印方向(相對於電極長邊指向)對噴印20帶ZTO薄膜電晶體電性的影響，透過ID-VG的量測結果，噴印方向垂直於電極長邊時，所製作之電晶體載子遷移率較高，平均達到2.85 cm2/Vs；而噴印方向平行於電極長邊之電晶體載子遷移率僅0.34cm2/Vs，透過SEM、表面輪廓儀與TEM分析，得知在噴印帶重疊處與咖啡環效應疊加影響後，產生多晶結構，推測其導電性較佳，載子於其內傳輸較容易，而薄層區域的ZTO為非晶型態，推測其導電性較差。當噴印方向平行於電極長邊指向時，因疊層與薄層區域於載子傳輸路徑上形成交替情況，導致載子傳輸不連續，快慢交替，抵銷了重疊層多晶較厚區域載子傳輸較快之優勢，進而導致噴印方向平行所製作的薄膜電晶體載子遷移率較差。
第三部分為噴印速度對電性的影響探討，總共測試四種噴印速度，分別為10, 20, 30, 40 mm/s，其中噴印速度越快，載子遷移率有提升的趨勢，但影響程度不大。由原本噴印速度10 mm/s的20帶ZTO TFT之載子遷移率4.8 cm2/Vs，上升至噴印速度40 mm/s之ZTO TFT的載子遷移率5.81 cm2/Vs。可能解釋原因為隨噴印速度增加，噴印的ZTO液滴在SiO2所能擴展而不受下一滴影響的時間越短，也因此咖啡環效應影響相對較不明顯，也因此形成更均勻的薄膜，因此噴印速度越大，載子遷移率越好。
第四部份為噴印層數對電性的影響，對於噴印一帶的ZTO薄膜總共測試噴印層數1、3、5、10層，僅噴印層數一層擁有TFT電性，噴印3層、5層、10層均呈現導通。透過TEM及SEM探究原因為噴印疊層於邊緣咖啡環效應區域形成的多晶及增厚的ZTO結構使薄膜過於導電，進而使電晶體呈現導通狀態。
第五部份為噴印帶數對電性的影響，共噴印1、3、5、10、20、30、40帶(皆為一層)，隨噴印帶數的增加，載子遷移率逐漸提高，由原本噴印1帶的載子遷移率1.94 cm2/Vs上升至噴印20帶5.41cm2/Vs。但當噴印帶的總和長度超出電極的涵蓋範圍(2000 μm)後，載子遷移率無上升趨勢，由噴印20帶之ZTO TFT的載子遷移率為5.17 cm2/Vs，而噴印40條4.9 cm2/Vs，由表面輪廓儀分析結果推論，當噴印帶由1帶上升至20帶時，ZTO薄膜噴印帶重疊區域的厚度隨之提升，且重疊區域的薄膜也由非晶形成多晶型態，因此使載子遷移率有上升趨勢；但隨噴印帶數繼續提高，薄膜噴印帶重疊處薄膜結晶性及厚度變化幾無變化，進而載子遷移率無進一步上升趨勢。另外，為了了解在實際噴印製程應用上，如何以最經濟的方式製作元件，亦即噴印最少帶的鋅錫氧化物主動層，同時又可以得到較佳的電性，因此選擇規劃噴印1, 8, 12, 16帶ZTO薄膜TFT元件，其中噴印12帶的噴印帶的總和長度(1850 μm)接近電極的涵蓋範圍(2000 μm)，由實驗結果顯示，噴印12帶ZTO薄膜TFT元件擁有良好的載子遷移率5.22 cm2/Vs，不但比起噴印1帶(2.68 cm2/Vs)及噴印8帶(4.62 cm2/Vs)擁有較佳的載子遷移率，同時在提高噴印帶數至16帶(5.3 cm2/Vs)後，載子遷移率無明顯上升趨勢，因此推測將噴印主動層總和長度剛好接近電極涵蓋範圍，即噴印12帶ZTO薄膜TFT元件便能使噴印ZTO TFT元件擁有最佳的電性。
第六部分為噴印帶與帶之間的噴印間距對電性的影響，共測試間距dy (y軸方向的間距) = 0, 30, 50, 100, 150, 200, 250, 350 μm，其中載子遷移率隨噴印間距縮小而逐漸增加，以同樣噴印20帶/一層，噴印速度為40 mm/s為例，載子遷移率由dy=250 μm 2.83 cm2/Vs上升到dy=150 μm 5.07cm2/Vs；但當噴印間距再進一步縮減時，dy=100, 50, 30, 0 μm，元件呈現導通狀態，透過材料分析推測原因為間距縮短導致薄膜厚度增加，同時多晶區域也增加，進而導致ZTO薄膜導電性提高。另外，在噴印間距dy = 150, 350 μm 的實驗上，比較了噴印一帶跟噴印五帶但間距dy分別為150和350 μm的條件下，製作出的薄膜電晶體電性比較。結果發現噴印間距對電性影響較大，同樣噴印5帶的情況下，當噴印間距由150 μm (重疊)至噴印間距350 μm (分開)後，載子遷移率由3.76 cm2/Vs下降至2.1 cm2/Vs，下降幅度為1.66；而噴印5條dy=350 μm (分開)的元件與噴印1條的元件電子遷移率較為相近(2.1與1.28 cm2/Vs)，推論相對於噴印間距，噴印帶數對於電性影響較小。

Thin Film Transistors (TFTs) are important structures in monitors and are mainly used as voltage switches to adjust the value and tone of each pixel. With the development of science and technology, the demand in reaction speed for screens of TVs and mobile phones are gradually increasing, and therefore so is the demand in TFT carrier mobility. With higher TFT carrier mobility, the electrode width of panels can be processed more delicately. Also, for the manufacturing process of TFT thin films, inkjet printing is valued highly for its flexibility, low cost, and easy patterning without mask or lithography. Nevertheless, it is the difficulty in controlling the diffusion of drops and how coffee ring effect influences the film shapes and TFTs properties that are the main difficulties for the inkjet-printing process. Therefore, this thesis focuses on the inkjet printing method to manufacture ZTO (Zinc Tin Oxide) thin films TFT, considering the influence of six different printing parameters (Including substrate temperature, printing direction, stage velocity, number of printed layers and stripes, dot interval in y axis (dy)) on ZTO TFTs electrical property and using analytical instruments including OM (Optical Microscope), Profilometer, TEM (Transmission Electron Microscope), SEM (Scanning Electron Microscope) to investigate the relationship between the structure of thin films and electrical property to improve the electrical property of inkjet-printed TFT.
This study discusses six different parameters. In the first part, the influence of different substrate temperatures on the electrical property of inkjet-printed ZTO TFT was examined including 30, 50, 70 oC with one inkjet-printed stripe. Among these, only devices with substrate temperature 70oC have TFT property with mobility 1.93 cm2/V·s. From TEM and profilometer measurements, the author postulates that it is due to the thickness of inkjet-printed ZTO films with substrate temperature 30oC being too thin (about 1.1 nm) that the devices are prevented from having TFT electrical property.
Secondly, the influence of different printing directions (relative to the long side of electrode) on the electrical property of inkjet-printed ZTO TFT with 20 printed stripes was examined. ID-VG measurements reveal that TFTs with ZTO printed in perpendicular to the long side of electrode show higher carrier mobility with average 2.85 cm2/ V s while TFTs with ZTO printed in parallel to the long side of electrode average only 0.34 cm2/Vs. SEM, Profilometer and TEM measurements all reveal that the overlapping of printed stripes and coffee ring effect make the film structure change from amorphous to polycrystalline which is postulated to be more conductive and where carrier transports more easily. By contrast, the thin layer region is amorphous and less conductive. When printing direction is parallel to the long side of electrode, the alternate overlapping region and thin layer region make the carrier transport discontinuous, alternate fast and slow and offsets the merit of fast-transporting for carrier in overlapping region, resulting in the lower carrier mobility for TFTs with ZTO printed in parallel to the long side of electrode.
Thirdly, the influence of stage velocity (including 10, 20, 30, 40 mm/s with 20 printed stripes) on the electrical property was examined. As the stage velocity increases, carrier mobility shows an increasing trend while the trend is unobvious. The mobility increases from 4.8 cm2/Vs with stage velocity 10mm/s to 5.81 cm2/Vs with stage velocity 40mm/s.
Fourthly, the influence of different printing layers (including 1, 3, 5, 10 layer(s)) on the electrical property of inkjet-printed ZTO TFT was examined. Only devices with one printed layer have TFT property while the others turn on. From TEM and SEM measurements, the author postulates that it is because polycrystalline structure formed due to overlapping of coffee ring effect is more conductive, which makes the TFTs turn on.
Fifthly, the influence of number of printing stripes (including 1, 3, 5, 10, 20, 30, 40 stripes with one layer) on the electrical property was examined. As the number of printing stripes increases, carrier mobility shows an increasing trend. The mobility increases from 1.94 cm2/Vs with 1 printing stripe to 5.41 cm2/Vs with 20 printing stripes. Nevertheless, when the total length of printed stripes exceeds 2000 μm, carrier mobility shows no further increasing trend from 5.17 cm2/Vs with 20 printed stripes to 4.90 cm2/Vs with 40 printed stripes. From profilometer analyses, the author postulates that the thickness of the overlapping region of printed stripes increases with the increase in the number of printed stripes from 1 to 20. The structure in the overlapping region also changes from amorphous to polycrystalline, which further makes the mobility have an increasing trend. But as the number of printed stripes increases further, the structure and thickness in the overlapping region barely change, which makes the mobility have no increasing trend. Furthermore, in order to realize how to manufacture the devices in the most economical way, that is, manufacturing ZTO TFTs with the least printed stripes while still maintaining great electrical performance, the influence of number of printing stripes (including 1, 8, 12, 16 stripes with one layer) on the electrical property was examined. Among them, the total length of 12 printed stripes is about 1850 μm which is close to that of electrode (2000 μm). Experimental results reveal that ZTO TFT with 12 printed stripes has great carrier mobility (5.22 cm2/Vs) which is not only higher than that of ZTO TFT with 1 (2.68 cm2/Vs) and 8 (4.62 cm2/Vs) printed stripes but also similar to that of ZTO TFT with 16 (5.3 cm2/Vs) printed stripes. Consequently, the author surmises that inkjet-printed ZTO TFTs with printed stripes of which the width is close to that of electrode, namely in this thesis, 12 printed stripes, can have greatest electrical performance.
Finally, the influence of dot interval y (dy) between each printed stripe (including 0, 30, 50, 100, 150, 200, 250, 350 μm) on the electrical property was examined. As the dot interval decreases, carrier mobility shows an increasing trend. Devices with 20 printed stripes and 40 mm/s stage velocity, for example, the mobility increases from 2.83 cm2/Vs with dy = 250 μm to 5.07 cm2/Vs with dy = 150 μm. Nevertheless, when the dy further decreases to 0, 30, 50, 100 μm, the devices start to turn on. From analytical measurements, the author surmises that it is because decreasing dot interval results in the increase of thickness of thin films and polycrystalline region, which increase the conductivity of thin films. Besides, the experiment for the comparison of the electrical property of inkjet-printed ZTO TFTs with dy = 150, 350 μm and 1, 5 printed stripes is also be conducted. The results reveal that dot interval has a greater effect on the electrical property than the number of printed stripes. With 5 inkjet-printed stripes, when the dot interval increase from 150 μm (overlapping) to 350 μm (separating), the carrier mobility decrease by 1.66 cm2/Vs from 3.76 cm2/Vs to 2.1 cm2/Vs while the carrier mobility for 5 inkjet-printed stripes and dy = 350 μm are similar for 1 inkjet-printed stripe (2.1 and 1.28 cm2/Vs respectively).

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