陽極氧化鋁模板(AAO)具有規則排列、準直並高深寬比的奈米級孔洞，且製程簡易，成本低廉，常用於模板輔助製備奈米結構材料，如：奈米棒、奈米線、奈米管等。
由於AAO須長時間才能得到高規則度排列的孔洞，且規則區域僅限於微米級，有人利用電子束微影製作規則排列突起的硬質模具(SiC與Si3N4)，經由壓印在鋁基材造成規則排列凹坑，導引大面積規則排列孔洞的成長，但其模具昂貴且製備不易。
本研究利用兩種容易取得的硬質模具為壓模：二次陽極化的多孔質氧化鋁模板及以濕式蝕刻製備圖案矽晶片。在鋁基板上以壓印製程，將圖案化的鋁基板配合陽極化條件以製備規則排列之孔洞。
結果顯示，以AAO與矽模具壓印的凹坑圖案可有效導引陽極化氧化鋁模板孔洞之成長，利用模板孔洞成長有自我修補的特性，配合電壓選擇，可得到排列不同於原圖案的規則排列孔洞，可大幅降低以電子束微影製備硬質模具的成本。本研究亦成功將此製程移至矽基鋁膜基材上，可於鋁薄膜上製作規則之圖案，未來可應用於奈米材料及元件之製作。

Porous anodic alumina oxide (AAO), a typical self-ordered nanochannel material with the characteristic feature of ordered high-aspect-ratio channels, has recently attracted increasing interest as a key material for the fabrication of nanometer-scale structures and devices.
However, the defect-free area of naturally ordering nanochannel is limited to a domain of several micrometers. Therefore, the preparation of AAO with a single domain structure in a large area is of great interest to the materials community. The proporsed pretexturing procedure by nanoimprinting is effective for precise control of the growth of the channel array in the anodic alumina oxide. But this procedure is relatively expensive due to the utilization of electron beam lithography.
In this study, the imprinting procedure has been conducted on aluminum substrates by utilizing ordered AAO and patterned Si as the mold, which can be easily fabricated in a large area at low cost. After imprinting, the anodization of patterned aluminum substrates was performed with different process parameters in order to study the effect of the pre-patterning step on the pore growth characteristics of AAO.
Experimental results show that the concaves on the pre-patterned surface of aluminum can guide the growth of nanochannels during anodization. Even a new lattice of pores with a reduced dimension can be prepared with the matched voltages by the assistance of the self-repair of AAO. In addition, the ordered nanopore arrays can be successfully prepared using the same procedure on the Al films deposited on the Si substrate. Thus, it is expected to be applied in the fabrication of nanostructures and nanodevices in the future.

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