隨著量子運算與低功耗電子元件的快速發展，對於具備低能耗、高整合度與 CMOS 相容性之超導材料與元件之需求日益提升。矽作為目前半導體工業中最成熟且成本控制最具優勢的材料平台，若能展現超導特性，將有助於發展新一代高整合、低溫操作之量子與超導電子元件，並大幅提升其製程兼容性與應用潛力。
本研究聚焦於矽超導共振器（ Silicon Superconducting Resonator）之製作與低溫特性分析，結合重摻雜硼（Boron）並經藍光雷射活化（Blue Laser Crystallization, BLC3W）實現矽超導性，進一步構築矽超導諧振器。為系統性探討結構對共振表現之影響，設計三種基板類型（高阻值矽、Poly on Oxide、Junction 結構）與三種耦合長度（137、217、337 μm），共製作五組樣品。
樣品經稀釋冷凍機（Dilution Refrigerator）進行毫開（mK）等級之頻率與相位量測後發現，僅高阻值矽基板樣品具明顯共振訊號。其中耦合長度為 337 μm 之結構表現最佳，頻率響應凹陷深、相位跳變幅度大，載入品質因子（QL）約為 2843.5。進一步針對該結構進行溫度與功率依賴性分析，觀察到共振凹陷隨操作溫度升高與輸入功率下降而逐漸減弱，顯示其具備溫度與功率靈敏性，驗證矽超導材料於微波共振應用中之可行性與潛力。

With the rapid advancement of quantum computing and low-power electronics, there is increasing demand for superconducting devices with low energy consumption, high integration, and CMOS compatibility. Silicon, being the most established platform in the semiconductor industry, offers significant advantages in cost and scalability. If superconductivity can be achieved in silicon, it may pave the way for next-generation quantum and cryogenic applications.
This study focuses on the fabrication and characterization of Silicon Superconducting microwave resonators. Superconductivity was induced in silicon through heavy boron doping and blue laser crystallization (BLC3W). Five Silicon Superconducting Resonator samples were designed using three substrate types—high-resistivity silicon, polycrystalline silicon on oxide, and junction-based silicon—along with three coupling lengths (137 μm, 217 μm, and 337 μm).
Cryogenic measurements were conducted using a dilution refrigerator down to millikelvin (mK) temperatures. Among all samples, only those fabricated on high-resistivity silicon exhibited clear resonance characteristics. In particular, the sample with a 337 μm coupling length showed the strongest response, featuring a pronounced frequency dip and distinct phase transition, with an extracted loaded quality factor (QL) of approximately 2843.5. Temperature- and power-dependent measurements further revealed the degradation of resonance depth under elevated temperature or reduced input power, indicating strong sensitivity to operating conditions.

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