太陽能電池起初主要被應用於供給太空航器電力，迄今，已超過二十年;近來，太陽能電池被大量運用于地面上與商業化應用，由於矽半導體為成本最實惠且已被發展的相當成熟，大多數商業化的太陽能電池是以矽半導體材料為主。
矽半導體主要可分成兩種:結晶矽與多晶矽半導體，兩者在商業化的應用上皆有其個自的優點與缺點；本論文中，主要著重於大面積的多晶矽半導體的研究（６英吋邊長正方形），利用低阻值金屬形成電池正面電極對商用型太陽能是不可或缺的，我們利用理論數值分析在光與電的功率損耗上取得平衡值，以最佳化我們設計的電極形態；再利用增強式電漿化學氣相沉積法與網印方法生產之樣品作為數據驗證。
平均而言，我們成功的改善短路電流至少約０．６毫安培／單位平方公分，其為主要的影響轉換效率因素之一，也因此我們在轉換效率上得到了增加；經由我們的數值分析發現了一些相當有用的概念，幫助我們可以成功預測影響效率因子的趨勢。
將來，若引入新式電極製作方法，我們所建立的數值分析方法，便可運用於電極最佳化的設計，縮短最佳化的時程。

Solar cells have been used for over two decades, initially for providing electrical power for spacecraft. Recently, they were applied for terrestrial system, and commercialized for various applications. Most of those commercialized cells are made of silicon semiconductor, which is inexpensive and mature developed for years.
Single crystalline and multi-crystalline silicon, two majority of silicon semiconductor, have their individual advantages and disadvantages as applied for commercialization. In this paper, we focus on large area multi-crystal silicon solar cell, sized 6 inches square. Metallization is an essential component for commercialized silicon solar cells owing to its low resistance. In this thesis, we apply theorem numerical methods to optimize designed patterns between the optical loss and resistance loss, existing a trade-off between them. By fabricating methods of in-line PECVD and screen-printing technique, we can verify our numerical analyses with actual samples.
In average, we succeeded in improving one of the key factors to converting efficiency, Jsc, the short-circuit current approximately at least 0.6 mA/cm2, hence we also got improvement in converting efficiency. By our theorem numerical method, some useful results came out and led us to well predict trends of all factors relevant to converting efficiency.
In the future, as introducing new technique of metallization, we can apply our numerical analyzing method to design new patterns and shorten optimizing period.

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