本研究利用連續式離子層吸附與反應（Successive Ionic Layer Adsorption and Reaction, SILAR）法，並在硫的氣氛下退火處理，於TiO2多孔性奈米薄膜粒子表面沉積CuInS2薄膜，以作為製備超薄吸收層(extremely thin absorber, ETA)太陽能電池。經電子顯微鏡(SEM)觀察其CuInS2/TiO2複合薄膜之型態，發現其TiO2粒子晶粒變大，顯示有沉積薄膜於TiO2粒子表面上。由能量分散圖(EDX)元素分析，顯示沉積薄膜接近CuInS2銅、銦、硫定組成比1：1：2。經Raman光譜圖證實此沉積於TiO2粒子上的薄膜為CuInS2，其具有黃銅礦(chalcopyrite)及CuAu相。以UV-vis-NIR反射圖譜發現其薄膜於可見光區域具有強吸收。進一步以CuInS2/TiO2電極組裝液態光電化學(photoelectrochemical)太陽能電池，藉由入射光電轉化效率(incident photo to current conversion efficiency, IPCE)之量測，尋求此複合薄膜最佳化之退火條件。本研究亦利用溶膠凝膠(sol-gel)法，製備TiOx緻密薄膜，以防止電洞傳導層接觸到導電基板造成電池短路。最後以CuSCN電洞傳導層沉積於CuInS2/TiO2複合薄膜電極上，組裝ITO/TiO2緻密薄膜/TiO2多孔性奈米薄膜/CuInS2吸收層/CuSCN電洞傳導層/Au歐姆接觸之超薄吸收層太陽能電池。

Thin CuInS2 absorber films have been synthesized on the surface of TiO2 nanoporous films using successive ionic layer adsorption and reaction (SILAR) method. After annealing under S atmosphere, SEM images show the grains of nanoparticles increase, indicating CuInS2 absorber films were grown on surface of the TiO2 particles. EDX elemental analysis reveals a nearly stoichiometric composition in the CuInS2 thin film. Raman spectra indicate that the CuInS2 films exhibit both chalcopyrite and CuAu phases. UV-vis-NIR spectra indicate that the CuInS2 films possess strong absorption in visible light region. The optimal CuInS2/TiO2 electrode were studied by incident photo to current conversion efficiency measurement in the liquid photoelectrochemical solar cells. Moreover, a dense TiOX film was formed on the ITO substrate before fabricating the TiO2 nanoporous film to prevent shorting between SnO2:In and CuSCN. Finally, an ITO/ TiOx dense film/ TiO2 nanoporous film/ CuInS2 absorber / CuSCN extremely thin absorber(ETA) solar cells was fabricated.

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