自從第一顆ZnSe系列的雷射完成後，綠光雷射二極體已成為二六族半導體異質結構研究的目標。 在許多研究團體達成ZnSe系列元件室溫下連續波操作的同時， 仍然有許多元件的生命週期的問題等待改進。
在我們的實驗中， 先集中於研究ZnCdSe/ZnSe以及ZnSe/GaAs介面的退火效應。 我們以光激螢光譜研究對不同數目下的ZnCdSe/ZnSe 量子井中的擴散效應以及在GaAs基板中Ga原子的擴散效應。 以分子束磊晶成長之量子井結構在250℃ to 650℃高溫回火。
根據此結果， 我們提出一種ZnSCdSe的量子井結構來改善對熱的穩定度以及壓制Cd原子的擴散。 再對於 ZnSSeTe中Ten-cluster的現象加以研究。 我們發現加入Te重摻雜之後的光性獲得改善以及發光能量增強並往短波長移動。 根據此現象我們將ZnCdSeTe此材料應用於量子井的主動層中不僅可以改善量子井的光特性而且也具有較佳的熱穩定度。 最後， 我們將此結果應用於 LED結構的量子井中並研究其光特性。

Abstract
Since the realization of the first ZnSe-based lasers in 1991 the development of blue emitting laser diodes has been the objective of II-VI heterostructure research. While several groups have achieved cw-operation of ZnSe-based devices at room temperature, the lifetime of such devices still remains a lot of problem to improve.
In ours experiment, we focus the annealing effect on ZnCdSe/ZnSe and ZnSe/GaAs interfaces first. We investigated the thermally induced interdiffusion in ZnCdSe/ZnSe quantum wells with the different number of wells and the outdiffusion of Ga atoms from the GaAs substrate by PL spectra. The quantum well structures grown by molecular beam expitaxy were thermally annealed at temperatures between 250℃ to 650℃. According to this result, we proposed the ZnSCdSe quantum well to improve the thermal stability and the Cd diffusion was suppressed. Than we study the optical property of the Ten-cluster Effects of ZnSSeTe. We found that the optical properties were improved by heavy Te doping, the peak intensity becomes much stronger and shift to lower energy. Applying to this Ten cluster effect, we use ZnCdSeTe as an active layer material which not only improves the optical of the quantum wells but also has the better thermal stability. Finally, a LED device applying the results in quantum wells is achieved and optical properties of LED were studies.

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