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研究生: 鍾俊緯
Chung, Chun-Wei
論文名稱: 以田口實驗方法解決膜厚度不均造成MURA之現象
Using Taguchi Method to Solve the Phenomenon of MURA Caused by Uneven Thickness
指導教授: 王榮泰
Wang, Rong-Tyai
學位類別: 碩士
Master
系所名稱: 工學院 - 工程科學系碩士在職專班
Department of Engineering Science (on the job class)
論文出版年: 2021
畢業學年度: 109
語文別: 中文
論文頁數: 35
中文關鍵詞: 田口方法膜厚度不均勻蝕刻
外文關鍵詞: Taguchi Method, Uneven Thickness, Etching
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  • 現今液晶顯示器產業有時會因為製程上的瑕疵造成液晶顯示器有Mura的缺陷,Mura是指顯示器亮度不均勻,人眼能夠從面板上辨識出顏色差異,可能是一片沒有規則的痕跡,也可能是方方正正很規則的形狀,雖然對使用上不會有太大的影響,但可能會造成產品的價格與美觀程度會有所差異,因此若在製作液晶顯示器製程中的其中一道乾蝕刻製程-反應離子蝕刻RIE(Reactive Ion Etching) 中能夠減少製程上瑕疵將能使Mura的產生減少。

    本文用L18(2^1×3^7)直交表做實驗,以此找出蝕刻製程中造成膜厚度不均勻而產生Mura現象之顯著因子為蝕刻時間、RF功率大小、氣體流量,最終選擇最佳參數並執行確認實驗,將異常的參數的干擾縮至最小並讓製程更加優化,經改善後參數MoN Loss Uniformity ratio由33.8%變為12.91%,這代表著MoN的膜厚度更加地均勻,經改善後參數對製程有很大的提升。

    Nowadays, liquid crystal displays have Mura defects due to defects in the manufacturing process. Mura refers to the uneven brightness of the display. The human eye can easily recognize the color difference from the panel. It may be an irregular trace or a regular shape. Although it will not have much impact on use, it may cause differences in the price and aesthetics of the product. Therefore, reducing process defects in reactive ion etching will reduce mura.
    In this paper, Taguchi method is used to find the best parameters and significant factors affecting characteristics. The L18 orthogonal array is used to find the important factors that affect the quality characteristics. The experimental results show that the significant factors that cause Mura due to uneven thickness during the etching process are etching time, RF power, and gas flow. Finally selecting the best parameters and performing confirmation experiments can minimize the interference of abnormal parameters and optimize the process. After improvement, the MoN Loss Uniformity ratio has changed from 33.8% to 12.91%, which means that the thickness of MoN is more uniform.

    摘要 I Extended Abstract II 致謝 VII 目錄 VIII 表目錄 X 圖目錄 XI 第1章 緒論 1 1.1 前言 1 1.2 研究動機與目的 2 1.3 文獻回顧 4 1.4 論文架構 6 1.5 研究流程圖 7 第2章 理論基礎 8 2.1 蝕刻行為概述 8 2.1.1 乾蝕刻性質與原理 9 2.1.2 Etching Mode和特徵 11 2.2 田口方法介紹[16] 13 2.2.1 田口方法之使用步驟 14 2.2.2 訊號與雜訊比(S/N比) 14 2.2.3 變異分析 15 第3章 研究方法與實驗設備 18 3.1 乾式蝕刻機台介紹 18 3.2 田口實驗設計 18 3.2.1 品質特性與理想機能 19 3.2.2 控制因子 20 第4章 田口品質工程實驗分析 23 4.1 實驗紀錄表及信號雜訊比(Experiment Log/signal-to-noise ratio) 23 4.2 S/N比因子反應表(Response Table) 24 4.2.1 S/N比因子反應圖(Response Graph) 24 4.3 品質特性反應表(Response Table) 25 4.3.1 品質特性反應圖(Response Graph) 26 4.4 變異分析表(Analysis of Variance) 26 4.5 製程優化 27 4.5.1 製程最佳化 28 4.5.2 原始設計與最佳設計之S/N預測 28 4.5.3 確認實驗 29 第5章 結論與建議 31 5.1 實驗總結 31 5.2 建議 31 參考文獻 33

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