本論文中，以氧化鎂鎳作為非揮發性電阻式隨機存取記憶體的主動層以及延伸式閘極場效電晶體pH值感測器的感測薄膜，因為氧化鎂以及氧化鎳晶格常數接近，故薄膜沉積品質優良。另外氧化鎳也常用來製作非揮發性電阻式隨機存取記憶體和酸鹼感測器。
接著介紹氧化鎂鎳電阻式記憶體的製程流程，並配合穿透式電子顯微鏡 (TEM) 及能量散射X射線普 (EDS) 分析元件結構與電阻轉換層成分，並且藉由原子力顯微鏡 (AFM) 分析氧化鎂鎳薄膜表面粗糙度，以及X射線光電子能譜，得知氧空缺數量會由於製程腔體中的氬氧比有所變動，最後透過X光繞射分析儀分析薄膜晶向。
首先我們以不同氬氧比濺鍍氧化鎂鎳，作為電阻轉換層，另外上下電極都選用白金惰性電極，探討在室溫下以不同氬氧比濺鍍的氧化鎂鎳作為電阻轉換層對非揮發性電阻式隨機存取記憶體電性產生的影響。其結果顯示製備完成的元件都有著雙極性的直流操作下，高低阻態超過100次，並再室溫、100豪伏讀取電壓下，保持高低阻態各10000秒的穩定特性，其中10%氬氧比的氧化鎂鎳電阻式記憶體，因為適當減少氧空缺，所以穩定性最高，耗能最少，另外操作次數能夠到達200次。為了改善10%氬氧比的氧化鎂鎳電阻式記憶體SET電壓以及RESET電流過高導致功率消耗問題，所以以10%氬氧比濺鍍的氧化鎂鎳薄膜作為主動層，白金作為下電極，搭配各種金屬組成的上電極 (鋁、鈦、鎳、銀、5 μ鎢針)，元件經過量測後一樣展現出雙極性電阻轉換特性外，使用銀上電極的氧化鎂鎳電阻式記憶體有最小的SET電壓以及RESET電流，操作次數也提高到250次。主要是因為銀是高自由能材料，施加正電壓時銀離子擴散至電阻轉換層，快速形成導通路徑，當負偏壓施加後，銀離子因為氧換還原反應導致導電燈絲斷裂。接著探討各式上電極對氧化鎂鎳電阻式記憶體特性產生的影響，接著分析各種上電極氧化鎂鎳電阻式記憶體的I-V Sweep特性曲線決定導電機制並且建立可靠的導電燈絲模型。為了與CMOS做結合，實現邏輯電路，是必須要更小的操作電壓以及操作電流和更高的操作次數，所以在氬氧比10%的氧化鎂鎳薄膜上再濺鍍一層氬氧比2%的氧化鎂鎳薄膜(雙層結構)，幫助導電燈絲形成，另外上電極選用銀電極，製作雙層結構電阻式記憶體，製備完後的元件經過量測，雙層結構電阻式記憶體的Set電壓由1.55V降低至0.27V並且操作次數也能超過200次。為了增加操作次數，將氬氧比10%的氧化鎂鎳薄膜退火500℃，使的銀離子在電阻轉換層中有更穩定的導電路徑，儘管Set電壓以及Reset 電壓有些微增加但操作次數從原本247次提升至794次所以電性有獲得改善。
另一部分，使用不同氬氧比的薄膜製作延伸式閘極場效電晶體pH值感測器，經過量測後發現氬氧比2%的氧化鎂鎳閘極場效電晶體pH值感測器擁有最高精確度以及最高靈敏度，因為氬氧比2%的氧化鎂鎳薄膜有最高的導電性，所以表面電位訊號能在傳輸時不容易消耗。

MgNiO is used as the oxide layer of non-volatile resistive random-access memory (RRAM) and the sensing membrane of the extended gate field effect transistor (EGFET) pH sensor. This is because MgNiO thin film quality is excellent as the lattice constants of MgO and NiO are almost the same. Besides, Nickel oxide is commonly used to fabricate non-volatile resistive random-access memory and pH sensors.
Next, the process flow of MgNiO RRAM is introduced. The structure of the device and the composition of the resistance switching layer are analyzed with the Transmission Electron Microscope (TEM) and Energy-Dispersive X-ray Spectroscopy (EDS). The surface roughness of MgNiO thin film is analyzed with Atomic Force Microscopy (AFM). The X-ray Photoelectron Spectroscopy (XPS) shows that the number of oxygen vacancies will be varied due to the argon-oxygen ratio in the process. Finally, the crystal orientation of the film is analyzed through the X-ray Diffraction (XRD) analysis.
First, MgNiO thin films with various oxygen flow ratios were selected to be the resistance switching layer, and Pt was applied as the top and bottom inert electrodes to investigate how MgNiO thin films with various oxygen flow ratios as the resistive switching layer affect electrical properties of RRAM at room temperature. As the results demonstrated, at room temperature, the fabricated devices could switch IV over 100 times and maintain high resistance state (HRS) and low resistance state (LRS) for 10000 seconds respectively in the bipolar switching mode with 100mV reading voltage. Among all the MgNiO RRAMs with various oxygen flow ratios, MgNiO RRAM with 10% oxygen flow ratio had the highest stability, less power dissipation and the switching cycle times could be operated 200 times.
To improve the power consumption problem caused by the high set voltage and high reset current, MgNiO based RRAMs were fabricated with MgNiO film with 10% oxygen flow ratio as resistive switching layer, Pt bottom electrode and various top electrodes (Al, Ti, Ni, Ag and 5μm tungsten probe). After measuring the electrical properties, we figured out that MgNiO based RRAMs with various top electrodes were all bipolar switching mode. Also, MgNiO based RRAM with Ag top electrode (Ag/MgNiO/Pt RRAM) had the smallest set voltage, lowest reset current and it could be operated up to 250 times. This was because with high free energy, Ag ions could diffuse into the resistive switching layer and form conductive paths rapidly when applying positive voltage; on the other hand, the filaments were ruptured by redox reaction when applying negative voltage. In the following section, we discussed about how the electrical properties of MgNiO based RRAMs were affected by the various top electrodes through analyzing I-V sweep to determine the conductive mechanisms and constructing reliable filamentary models.
To apply to CMOS topology and accomplished logic circuit, lower operating voltage, operating current and higher switching cycle times are required. Therefore, the MgNiO film with 2% oxygen flow ratio was deposited on the MgNiO film with 10% oxygen flow ratio to assist the formation of filament. Besides, Ag top electrode was applied to bilayer RRAM. As the result, the set voltage of bilayer decreased to 0.27V and the switching cycle times could be operated over 200 times. To get more switching cycle times, the resistive switching layer composed of MgNiO film was annealed at 500℃ to construct more stable conducting paths for Ag ions. The switching cycle times of Ag/MgNiO/Pt RRAM annealed at 500℃ increased from 247 to 794 times, therefore, the electrical properties of Ag/MgNiO/Pt RRAM were improved.
EGFET pH sensors were fabricated with MgNiO films with various oxygen ratios. The highest accuracy and sensitivity could be obtained in MgNiO based pH sensor with 2% oxygen flow ratio. This was because the conductivity of MgNiO film with 2% oxygen flow rate was the highest so the signal of surface potential could be delivered without decrement.

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