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研究生： 陳則甫
Chen, Tse-Pu
論文名稱： 利用不同基板於氮化鎵蕭基光檢測器與金半金光檢測器之研究
The Study of GaN Schottky Barrier Photodetectors and MSM Photodetectors with Different Templates
指導教授： 張守進
Chang, Shoou-Jinn
共同指導教授: 陳志方
Chen, Jone-Fang
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2010
畢業學年度： 98
語文別： 英文
論文頁數： 111
中文關鍵詞： 光檢測器 、氮化鎵 、圖案化藍寶石基板 、雜訊 、奈米柱
外文關鍵詞： photodetectors, GaN, patterned sapphire substrate, noise, nanorod
相關次數： 點閱：111  下載：0 
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    • 在本論文中，我們利用有機化學氣相沉積系統在圖案化藍寶石基板上成長出三五族氮化物材料，或是利用有機化學氣相沉積系統在奈米柱結構上成長出三五族氮化物材料。然後，我們將在這些圖案化藍寶石基板和奈米柱結構上製作出金半金光檢測器和蕭基二極體，並對這些原件做特性上的分析。
    這篇論文主要由兩大部分組成的。在第一部分，我們主要是在討論在圖案化藍寶石基板上製作出的高品質氮化鎵的蕭基二極體，並且和一般傳統的藍寶石基板上製作出的氮化鎵的蕭基二極體的特性來做比較，我們發現利用圖案化藍寶石基板可以降低暗電流和增加響應度。在兩伏特的偏壓下，我們可以發現利用圖案化藍寶石基板的蕭基二極體的雜訊等效功率和檢測率分別為9.08×10-11 W and 1.74×1010 cmHz0.5W-1，比使用一般傳統的藍寶石基板所做出來的還要好。
    在第二部分，我們主要是在討論在奈米柱結構上製作出的高品質氮化鎵的金半金光檢測器，並且和一般傳統的藍寶石基板上製作出的氮化鎵的金半金光檢測器的特性來做比較，我們發現利用奈米柱結構來增進氮化鎵的品質並且可以降低暗電流，還可以減少光傳導增益、提升紫外光對可見光比。
    而在這部分，我們主要是在討論在奈米柱結構上製作出的高品質氮化鎵的蕭基二極體，並且和一般傳統的藍寶石基板上製作出的氮化鎵的蕭基二極體的特性來做比較，我們發現利用奈米柱結構可以降低暗電流，還可以減少光傳導增益、提升紫外光對可見光比。在兩伏特的偏壓下，我們可以發現利用圖案化藍寶石基板的蕭基二極體的雜訊等效功率和檢測率分別為7.00×10-10 W and 2.26×109 cmHz0.5W-1，而利用一般傳統的藍寶石基板的蕭基二極體的雜訊等效功率和檢測率分別為3.56×10-6 W and 4.44×105 cmHz0.5W-1。

    In this thesis, the nitride-based III-V alloys with patterned sapphire substrate or nanorod template had been grown and characterized by metalorganic chemical vapor deposition (MOCVD). Then, the Schottky barrier photodetectors and MSM photodetectors were fabricated.
    This thesis is made up of two parts. In the first part, we focused on a high quality GaN Schottky barrier photodetector was prepared on patterned sapphire substrates (PSS) by metalorganic chemical vapor deposition. Comparing with the PD prepared on conventional flat sapphire substrate, it was found that we can reduce dark current and enhance responsivity. Under -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 9.08×10-11 W and 1.74×1010 cmHz0.5W-1, respectively, for the PD prepared on PSS.
    In the second part, we reported the fabrication of GaN-based metal-semiconductor photodetectors (PDs) on conventional flat sapphire substrate and on nanorod template. Compared with the PD prepared on flat sapphire substrate, it was found that leakage current of the PD prepared on nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.
    In this part, we also reported the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorod template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00×10-10 W and 2.26×109 cmHz0.5W-1, respectively, for the PD prepared on nanorod template. With the same -2 V bias, it was found that NEP and D* were 3.56×10-6 W and 4.44×105 cmHz0.5W-1, respectively, for the PD prepared on conventional sapphire substrate.

    Abstract (in Chinese) I Abstract (in English) III Acknowledgement V Contents VI Table Captions IX Figure Captions X Chapter 1 Introduction 1 1-1 Introduction and motivation 1 1-2 Organization of the thesis 4 Chapter 2 Fabrication Systems and Measurement Systems 8 2-1 Theory of metal-semiconductor contact 8 2-2 The carrier transport mechanisms of MSM structure 12 2-3 Parameters of PDs 14 2-4 The calculated methods of Schottky barrier height 17 2-4-1 Thermionic emission (TE) model 17 2-4-2 H(I) model 17 2-4-3 Norde model 18 2-4-4 Power exponent (α) model 19 2-5 X-Ray Diffraction (XRD) System 21 2-6 Photoluminescence (PL) Spectrum System [59] 22 2-7 Scanning Electron Microscope (SEM) 22 2-8 Atomic Force Microscope System 24 2-9 The responsivity measurement system and other measurement system 24 Chapter 3 The characteristics of Schottky contact 39 3-1 Background 39 3-2 Experiment 40 3-2-1 The fabrication of the bulk GaN with nanorod template 40 3-2-2 GaN MSM photodetectors 40 3-3 Dark current characteristics of different metal contact thickness 42 Chapter 4 GaN Schottky Barrier Photodetectors Prepared on Patterned Sapphire Substrate 44 4-1 Background 44 4-2 Experiment 46 4-2-1 The fabrication of the bulk GaN with patterned sapphire substrates 46 4-2-2 GaN Schottky barrier photodetectors 47 4-3 The material analyses of fabricated GaN film 49 4-3-1 PL measurements 49 4-3-2 X-ray rocking curves (XRC) measurements 50 4-3-3 SEM measurement 50 4-4 Characteristics of GaN-based Schottky barrier photodetectors prepared on patterned sapphire substrate 51 Chapter 5 GaN Metal-Semiconductor-Metal Photodetectors and Schottky Barrier Photodetectors Prepared on Nanorod Template 68 5-1 Background 68 5-2 Experiment 69 5-2-1 The fabrication of the bulk GaN with nanorod template 69 5-2-2 GaN MSM photodetectors 70 5-2-3 GaN Schottky barrier photodetectors 72 5-3 The material analyses of fabricated GaN film 74 5-3-1 X-ray rocking curves (XRC) measurements 74 5-3-2 SEM measurement 75 5-4 Characteristics of GaN-based MSM photodetectors prepared on nanorod template 76 5-4 Characteristics of GaN-based Schottky barrier photodetectors prepared nanorod template 78 Chapter 6 Conclusions and Future Works 99 6-1 Conclusions 99 6-2 Future works 100 Reference 101

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