本論文於駐極體材料－聚醯亞胺(polyimide, PI)中添加低溶解溶劑與摻雜新型太陽能材料BTP-4Cl，提升介電層之載子捕捉能力，製作具有較大記憶窗口之有機記憶元件，並且透過加熱片模擬記憶體組裝於儀器中的受熱情形，探討非揮發性記憶元件受到溫度干擾的影響。
本實驗分成三部分，首先以提升元件電性為目標，將PI溶液以低溶解溶劑p-xylene稀釋，提升PI薄膜的品質，使元件閘極電流減小，並促使元件具有較大的場效電流。第二部分將增加元件記憶特性作為重點，於PI駐極體溶液中摻雜電子受體BTP-4Cl，藉此增加載子捕捉層對電子的捕捉能力，在電壓寫入/綠光輔助清除操作之下大幅增加元件之記憶窗口，元件可重複進行寫入/清除操作高達500次以上，在此獲得具有優良穩定性之記憶元件。於第三部分將元件分別放置在溫度於25 ℃、40 ℃、60 ℃、80 ℃、100 ℃之加熱片上進行溫度測試，透過AFM、XRD、拉曼、PL與吸收光譜進行薄膜分析，經由電性測試結果發現當元件重複操作在高於100 ℃以上，記憶窗口會大幅衰減，記憶保持力測試於60 ℃以上的記憶窗口剩餘量不及初始值的一成，由溫度所提供的動能促使熱載子從薄膜中釋放，導致關閉電流上升近乎三個數量級，亦減緩元件從關閉至開啟的切換速度，記憶元件因缺陷增加導致需要更大的閘極偏壓才足以形成通道，記憶特性明顯受到熱的負效應而衰退。
透過實驗結果可知，於PI加入適量的低溶解溶劑p-xylene可以優化元件基本電性，透過在PI中摻雜BTP-4Cl能獲得較大記憶窗口之小電壓操作元件，此記憶元件操作在40 ℃以下仍然能保有其優異的記憶特性。

In this thesis, we studied the temperature effect on a PTCDI-C13-based memory device under the test temperatures of 25 ℃, 40 ℃, 60 ℃, 80 ℃, and 100 ℃. The memory window of the device could reach 1.87 V at 25 ℃ for the PI:BTP-4Cl blending layer as the charge storage layer. When the temperature increased, PTCDI-C13 film was affected by thermal interference, resulting in larger grain sizes and a Raman spectral shift affected by thermal vibration. Hot carriers were released from the dielectric layer and the active layer due to thermal effects, so the subthreshold swing (ss) increased, and the on/off current ratio decreased from 105 to 102. Overall, the electrical performances of the device deteriorated as the test temperature increased. From the stability of the device, the memory window at 100 °C was below 0.31 V after operation of 500 times and the memory retention dramatically suffered at operating temperatures higher than 60 °C. It indicates that the stability of the device was reduced at high temperatures. According to the tests results, this device can roughly maintain its stability at a temperature below 40 °C.

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