本研究奠基於利用有機金屬化學氣相沈積法，所製作的氮化銦鎵/氮化鎵多重量子井系列藍綠光發光二極體系統，針對多重量子井的磊晶過程、磊晶片製作完成後、乃至於晶粒製程階段，分別提出了可有效提升發光二極體內部量子效率的方法，以改善元件發光效能為目標。研究中引入的技術及主要概念包括：(1)在量子井中製作高密度尺寸極小的富銦量子點、(2)導入表面電漿子共振效應與激子進行能量耦合，以及(3)量子侷限史塔克效應的補償。
本論文依研究主題分為四大部分，首先，在氮化銦鎵量子井成長時控制其動力學因素，透過旋節相分離機制可獲得高密度(2×1012 cm-2)且尺寸極小(~2.3奈米)的富銦量子點。此高密度極小富銦量子點具有強大的量子侷限效應，保護了載子免於被熱活化至非輻射性複合中心，內部量子效率得到了18%顯著的提升。此外，吾人並發現具有高密度富銦量子點的氮化銦鎵量子井，其量子井/阻障層界面較為平滑，且缺陷數較低，所製作的綠光發光二極體封裝體在光輸出上也被增強了約10%。因此，製作高密度的富銦量子點作為發光中心，特別是在高銦含量的綠光發光二極體應用上，突顯了其應用價值。
第二部分，吾人製作了二維週期性奈米銀金屬陣列，導入綠光發光二極體的p-GaN層之中，透過有效的激子-表面電漿電磁極化子共振耦合效應，同時提升了內部量子效率以及光萃取率。由p-GaN層表面激發並量測其光激發光光譜，可獲得最大2.8倍的光激發光強度增益。由於整體p-GaN層的厚度毋須被犧牲，且金屬層可經由此結構設計，被製作在相當接近發光中心的位置，因此可有效克服因指數倍率衰減的表面電漿子電磁場，而快速衰弱的耦合效率問題。本結構設計因此可被應用於高效率氮化銦鎵/氮化鎵多重量子井系列的發光二極體之研製。
第三部分則延續第二部分的設計概念，吾人實現了一種透過侷域表面電漿子共振耦合效應，來強化藍光發光二極體的結構設計及製作方法。主要的藍光發光強度被增益了約3.6倍，且伴隨發光波長向表面電漿子共振特徵波長些微紅移。最大的發光增益量約為4.4倍，出現在470奈米處，符合穿透光譜中展現出來的表面電漿子共振特徵波長。載子的生命期從897 ps減少至670 ps，伴隨著約1.5倍的輻射複合速率提升，證明了有效地侷域表面電漿子共振耦合效應的發生。此外，內部量子效率被有效提升了約53 %。在實驗上，此製程及結構設計概念可用以實現大面積製作的高效率電漿子強化發光二極體，藍光發光的氮化銦鎵量子井內部量子效率可獲得提升。
最後一部分，吾人針對綠光發光的發光二極體磊晶片，設計一治具，可對氮化鎵磊晶結構施加一外部應力。由拉曼光譜分析結果，吾人發現此外部施加的應力與樣品曲率之關係呈現指數關係。此外，利用微光激發光光譜分析樣品在施加應力前後的光學特性，發現以此設計對樣品進行外部拉伸應力的施加，可有效地削弱氮化銦鎵量子井中所受到的壓應力，抵銷因壓應力所產生的內部壓電場；意即量子侷限史塔克效應因外部拉伸應力的施加而獲得補償，雖然發光波長產生藍移現象，然而內部量子效率將因此得以改善。吾人也針對特定發光二極體晶粒元件，量測其施加應力前後的發光特性，發現此外部應力可成功增強光輸出功率，提升倍率約為12.4 %，並且不會明顯改變其元件操作之起始電壓。
本論文呈現的研究成果可提供作為提升發光二極體內部量子效率的有效方法依據，包括由量子井磊晶階段製作高密度尺寸極小的富銦量子點；磊晶片完成後可利用本論文提出的結構設計概念，來引入表面電漿子共振耦合效應；最後若對具有內部應力的磊晶樣品施加一外部應力形變，可進一步有效補償其量子侷限史塔克效應，內部量子效率亦可獲得提升。

This research is focused on light emission efficiency enhancement of InGaN/GaN multiple quantum wells (MQWs) based blue or green light-emitting diodes (LEDs), which were grown by metalorganic chemical vapor deposition (MOCVD). With respect to the major manufacturing procedures of the LEDs from epitaxial growth of MQWs, wafer fabrication to chip fabrication, the corresponding methods are proposed and demonstrated to improve internal quantum efficiency (IQE) for better lighting performance. The main techniques and concepts include (1) fabrication of high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN QWs, (2) surface plasmon (SP) resonance coupling with excitons in the QWs, and (3) compensation of quantum confined Stark effect (QCSE) by external stress. The achievements proposed in this research provide effective schemes to improve the IQE for the InGaN/GaN MQWs based LEDs.

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